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21. 发明申请

US20090209777A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090209777A1
公开(公告)日：2009-08-20
申请号：US12352256
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： C07F17/02
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式（L1）M（L2）y的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的阴离子6电子供体配体，L2相同或不同，为（i）取代的或未取代的阴离子2电子供体配体，（ii）取代或未取代的阴离子4电子供体配体，（iii）取代或未取代的中性2电子供体配体，或（iv）取代或未取代的具有侧基的阴离子4电子给体配体中性2电子供体部分; y为1〜3的整数，并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

22. 发明申请

US20090200524A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090200524A1
公开(公告)日：2009-08-13
申请号：US12352186
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： H01B1/12 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

23. 发明授权

US07550385B2 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US07550385B2
公开(公告)日：2009-06-23
申请号：US11240005
申请日：2005-09-30
申请人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
发明人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

24. 发明授权

US07354849B2 Catalytically enhanced atomic layer deposition process 有权
标题翻译：催化增强原子层沉积过程
公开(公告)号：US07354849B2
公开(公告)日：2008-04-08
申请号：US11365082
申请日：2006-02-28
申请人： John J. Plombon , Adrien R. Lavoie , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka
发明人： John J. Plombon , Adrien R. Lavoie , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45534 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method for carrying out a damascene process to form an interconnect comprises providing a semiconductor substrate having a trench etched into a dielectric layer, wherein the trench includes a barrier layer and an adhesion layer, depositing a copper seed layer onto the adhesion layer using an ALD process, depositing an iodine catalyst layer onto the copper seed layer using an ALD process, and depositing a copper layer onto the copper seed layer using an ALD process. The iodine catalyst layer causes the copper layer to fill the trench by way of a bottom-up fill mechanism. The trench fill is performed using a single ALD process, which minimizes the creation of voids and seams in the final copper interconnect.
摘要翻译：执行镶嵌工艺以形成互连的方法包括提供具有蚀刻到电介质层中的沟槽的半导体衬底，其中所述沟槽包括阻挡层和粘合层，使用ALD将铜籽晶层沉积到粘附层上工艺，使用ALD工艺将碘催化剂层沉积到铜籽晶层上，并使用ALD工艺将铜层沉积到铜籽晶层上。碘催化剂层使铜层通过自下而上的填充机制填充沟槽。使用单个ALD工艺来执行沟槽填充，其最小化最终铜互连中的空隙和接缝的产生。

25. 发明申请

US20100230817A1 Using Unstable Nitrides to Form Semiconductor Structures 有权
标题翻译：使用不稳定氮化物形成半导体结构
公开(公告)号：US20100230817A1
公开(公告)日：2010-09-16
申请号：US12788603
申请日：2010-05-27
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

26. 发明授权

US07749906B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US07749906B2
公开(公告)日：2010-07-06
申请号：US11359060
申请日：2006-02-22
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

27. 发明授权

US07704895B2 Deposition method for high-k dielectric materials 失效
标题翻译：高k电介质材料沉积方法
公开(公告)号：US07704895B2
公开(公告)日：2010-04-27
申请号：US12061584
申请日：2008-04-02
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
IPC分类号： H01L21/473
CPC分类号： H01L21/316 , C23C18/1216 , C23C18/1225 , C23C18/1245
摘要： A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.
摘要翻译：公开了一种在半导体衬底上沉积高k电介质材料的方法。该方法包括将化学浴施加到基底表面上，冲洗表面，向基底表面施加共反应物浴，并漂洗该表面。化学浴包括至少包含铪化合物，铝化合物，钛化合物，锆化合物，钪化合物，钇化合物或镧系元素化合物的金属前体。

28. 发明申请

US20100098960A1 MAGNETIC INSULATOR NANOLAMINATE DEVICE FOR INTEGRATED SILICON VOLTAGE REGULATORS 审中-公开
标题翻译：用于集成硅电压调节器的磁选绝缘体纳米酸盐器件
公开(公告)号：US20100098960A1
公开(公告)日：2010-04-22
申请号：US11764539
申请日：2007-06-18
申请人： Juan E. Dominguez , Arnel M. Fajardo , Adrien R. Lavoie
发明人： Juan E. Dominguez , Arnel M. Fajardo , Adrien R. Lavoie
IPC分类号： B32B15/04 , B05D5/12
CPC分类号： H01L23/645 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/14 , H01L2924/19015 , H01L2924/19041 , H01L2924/19042 , H01L2924/3011 , H01L2924/00
摘要： A magnetic insulator nanolaminate device comprises a metal magnetic layer formed on a substrate, an insulating layer formed on the metal magnetic layer, wherein the insulating layer is formed by nitriding a portion of the metal magnetic layer, a chelating group layer formed on the insulating layer, and a metal seed layer bonded to the chelating group layer. The magnetic insulator nanolaminate device may be formed by depositing a metal layer on a substrate, converting a portion of the metal layer into an insulating layer using a nitridation process, and depositing a metal seed layer onto the insulating layer using a metal immobilization process, wherein the metal seed layer enables the deposition of a metal layer onto the insulating layer.
摘要翻译：一种磁性绝缘体纳米材料装置，其特征在于，在基板上形成有金属磁性层，形成在所述金属磁性层上的绝缘层，所述绝缘层通过对所述金属磁性层的一部分进行氮化而形成，所述绝缘层形成在所述绝缘层上和与螯合基团层结合的金属种子层。可以通过在基板上沉积金属层，使用氮化工艺将金属层的一部分转换为绝缘层，并使用金属固定工艺将金属种子层沉积到绝缘层上来形成磁性绝缘体纳米材料器件，其中金属种子层能够将金属层沉积到绝缘层上。

29. 发明申请

US20090022958A1 AMORPHOUS METAL-METALLOID ALLOY BARRIER LAYER FOR IC DEVICES 审中-公开
标题翻译：用于IC器件的非晶金属 - 金属合金障碍层
公开(公告)号：US20090022958A1
公开(公告)日：2009-01-22
申请号：US11779894
申请日：2007-07-19
申请人： John J. Plombon , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez
发明人： John J. Plombon , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： H01L21/768 , B32B3/10
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76828 , Y10T428/24545
摘要： A method for fabricating an amorphous metal-metalloid alloy layer for use in an IC device comprises providing a substrate in a reactor that includes a dielectric layer having a trench, pulsing a metal precursor into the reactor to deposit within the trench, wherein the metal precursor is selected from the group consisting of CpTa(CO)4, PDMAT, TBTDET, TaCl5, Cp2Co, Co-amidinates, Cp2Ru, Ru-diketonates, and Ru(CO)4, purging the reactor after the metal precursor pulse, pulsing a metalloid precursor into the reactor to react with the metal precursor and form an amorphous metal-metalloid alloy layer, wherein the metalloid precursor is selected from the group consisting of BH3, BCl3, catechol borane, AlMe3, methylpyrrolidinealane, AICl3, SiH4, SiH2Cl2, SiCl4, tetraalkylsilanes, GeH4, GeH2Cl2, GeCl4, SnCl4, trialkylantimony, SbMe3, SbEt3, arsine, and trimethylarsine, purging the reactor after the metalloid precursor pulse, and annealing the amorphous metal-metalloid layer at a temperature between 50° C. and 700° C. for 5 to 1200 seconds.
摘要翻译：一种用于制造用于IC器件的非晶金属 - 准金属合金层的方法包括在反应器中提供衬底，该反应器包括具有沟槽的电介质层，将金属前体脉冲入反应器以沉积在沟槽内，其中金属前体选自CpTa（CO）4，PDMAT，TBTDET，TaCl5，Cp2Co，Co-脒基物，Cp2Ru，Ru-二酮酸酯和Ru（CO）4），在金属前体脉冲之后进行反应，脉冲准金属前体进入反应器以与金属前体反应并形成无定形金属 - 准金属合金层，其中准金属前体选自BH3，BCl3，儿茶酚硼烷，AlMe3，甲基吡咯烷烃，AICl3，SiH4，SiH2Cl2，SiCl4，四烷基硅烷，GeH 4，GeH 2 Cl 2，GeCl 4，SnCl 4，三烷基锑，SbMe 3，SbEt 3，胂和三甲基胂，在准金属前体脉冲之后吹扫反应器，并在温度下降退火无定形金属 - 在50°C和700°C下烘烤5至1200秒。

30. 发明授权

US07476615B2 Deposition process for iodine-doped ruthenium barrier layers 有权
标题翻译：碘掺杂钌屏障层的沉积工艺
公开(公告)号：US07476615B2
公开(公告)日：2009-01-13
申请号：US11591792
申请日：2006-11-01
申请人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
发明人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/45529 , C23C18/08 , C23C18/1216 , C23C18/1295 , C23C18/1605 , C23C18/165 , C23C18/1889 , C25D5/02 , C25D7/123 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
摘要翻译：在ALD或CVD工艺中使用新颖的含碘钌前体形成在集成电路内与铜互连一起使用的掺碘钌阻挡层。可以使用的钌前体包括含钌的羰基，芳烃，环戊二烯基和某些其它含钌化合物。钌前体包括碘以催化随后的铜金属沉积并平滑钌层的表面。钌阻挡层的厚度上的碘浓度可以是恒定的或可以分级的。

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