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    • 21. 发明授权
    • Light absorbent and organic antireflection coating composition containing the same
    • 含有该吸收剂和有机抗反射涂料的组合物
    • US07939245B2
    • 2011-05-10
    • US12157819
    • 2008-06-13
    • Joo-Hyeon ParkJi-Young KimJun-Ho Lee
    • Joo-Hyeon ParkJi-Young KimJun-Ho Lee
    • G03F7/11C08F2/44C09K3/00H01L21/30
    • G03F7/091
    • The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b): wherein X is selected from the group consisting of a substituted or unsubstituted cyclic group having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.
    • 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式(1a)的化合物,下式(1b)的化合物,式(1a)和(1b)的化合物的混合物, 其中X选自具有1至20个碳原子的取代或未取代的环状基团,芳基,二芳基醚,二芳基硫醚,二芳基亚砜和二芳基酮; R1为氢原子,取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。
    • 23. 发明授权
    • Polymer and chemically amplified resist composition containing the same
    • 含有其的聚合物和化学放大抗蚀剂组合物
    • US07285373B2
    • 2007-10-23
    • US10940469
    • 2004-09-14
    • Young-Taek LimJoo-Hyeon ParkDong-Chul SeoChang-Min KimSeong-Duk ChoHyun-Sang Joo
    • Young-Taek LimJoo-Hyeon ParkDong-Chul SeoChang-Min KimSeong-Duk ChoHyun-Sang Joo
    • G03F7/039
    • G03F7/0046G03F7/0045G03F7/0395G03F7/0397
    • A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent.The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
    • 化学放大抗蚀剂组合物包括新型聚合物,光致酸产生剂和溶剂。 化学放大抗蚀剂可以形成粘合性优异,对基板的依赖性低,抗紫外波长范围如KrF准分子激光器或ArF准分子激光器的透光性,耐干蚀刻性,灵敏度,分辨率和显影性。 此外,聚合物含有最大数量的饱和脂肪族环,以提高耐蚀刻性,并且还包括作为溶液的烷基烷基酯单体引入的常规聚丙烯酸酯抗蚀剂相对于图案的边缘粗糙度的问题,形成均匀的 由于通过丙烯酸烷氧基烷基酯单体与酸的脱保护反应与甲醛和羧酸酯化合物一起产生的烷基醇化合物作为图案中的溶剂或消泡剂,因此图案的边缘。