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21. 发明申请

US20120122261A1 CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE 有权
标题翻译：具有增强电容的CMOS IMAGER光电二极管
公开(公告)号：US20120122261A1
公开(公告)日：2012-05-17
申请号：US13288686
申请日：2011-11-03
申请人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
发明人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.
摘要翻译：一种制造像素传感器单元的方法，该像素传感器单元包括具有非横向放置的电荷收集区域的感光元件。该方法包括在第一导电类型材料的衬底中形成沟槽凹槽，并用具有第二导电类型材料的材料填充沟槽凹槽。然后将第二导电类型材料从填充的沟槽材料扩散到围绕沟槽的衬底区域，以形成非横向布置的电荷收集区域。去除填充的沟槽材料以提供沟槽凹槽，并且用具有第一导电类型材料的材料填充沟槽凹槽。表面注入层形成在具有第一导电类型材料的沟槽的任一侧。沟槽型感光元件的收集区域由向外扩散的第二导电型材料形成，并与衬底表面隔离。

22. 发明申请

US20080272399A1 PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 有权
公开(公告)号：US20080272399A1
公开(公告)日：2008-11-06
申请号：US12172305
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

23. 发明申请

US20100013973A1 PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY 有权
标题翻译：具有帧存储能力的像素传感器单元
公开(公告)号：US20100013973A1
公开(公告)日：2010-01-21
申请号：US12174289
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/2355
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.
摘要翻译：在CMOS图像传感器的保持栅晶体管和传输栅极晶体管之间提供一组帧传输晶体管，以便能够在曝光之后存储在感光二极管中产生的电荷。可以在CMOS图像传感器的多次曝光之后，在每个帧转移晶体管中的每个电荷向着传输门晶体管移动之前执行来自该组帧转移晶体管的电荷的读出。启用有用的操作模式，包括用于快速捕获连续图像的突发模式操作和其中以不同曝光时间拍摄多个图像的高动态范围操作，或者通过组合帧传输晶体管的扩散来提供大的电容。

24. 发明申请

US20100013972A1 PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY 有权
公开(公告)号：US20100013972A1
公开(公告)日：2010-01-21
申请号：US12174264
申请日：2008-07-16
申请人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
发明人： James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
IPC分类号： H04N5/335
CPC分类号： H04N5/37452
摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

25. 发明授权

US07732841B2 Pixel sensor cell for collecting electrons and holes 有权
标题翻译：用于收集电子和空穴的像素传感器单元
公开(公告)号：US07732841B2
公开(公告)日：2010-06-08
申请号：US12172309
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L27/148 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

26. 发明授权

US07633042B2 Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes 失效
标题翻译：像素传感器单元具有围绕用于收集电子和空穴的收集阱区的钉扎层
公开(公告)号：US07633042B2
公开(公告)日：2009-12-15
申请号：US12172306
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

27. 发明申请

US20090001427A1 CHARGE CARRIER BARRIER FOR IMAGE SENSOR 审中-公开
标题翻译：用于图像传感器的充电载物障碍物
公开(公告)号：US20090001427A1
公开(公告)日：2009-01-01
申请号：US11770843
申请日：2007-06-29
申请人： James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe
发明人： James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe
IPC分类号： H01L27/148 , H01L31/113 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vicinity of the dark current correction pixel cell and the buffer pixel cell resembles an active pixel cell. Thus, an environment surrounding the dark current correction pixel cell is similar to the environment surrounding an active pixel cell.
摘要翻译：像素传感器结构，制造方法和操作方法。公开了一种缓冲像素单元，其包括用于防止杂散电荷载流子到达暗电流校正像素单元的阻挡区域。缓冲像素单元位于暗电流校正像素单元附近，并且缓冲像素单元类似于有源像素单元。因此，围绕暗电流校正像素单元的环境与有源像素单元周围的环境相似。

28. 发明授权

US08106432B2 CMOS imager photodiode with enhanced capacitance 有权
标题翻译：具有增强电容的CMOS成像光电二极管
公开(公告)号：US08106432B2
公开(公告)日：2012-01-31
申请号：US12634898
申请日：2009-12-10
申请人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
发明人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
IPC分类号： H01L31/04
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
摘要翻译：一种像素传感器单元，具有具有表面的半导体衬底; 形成在具有与包括基板表面的物理边界完全隔离的非横向布置的电荷收集区域的基板中的感光元件。感光元件包括具有形成在第一导电类型材料的衬底中的侧壁的沟槽; 与所述侧壁中的至少一个相邻形成的第二导电类型材料的第一掺杂层; 以及形成在所述第一掺杂层和所述至少一个沟槽侧壁之间并形成在所述衬底的表面处的所述第一导电类型材料的第二掺杂层，所述第二掺杂层将所述第一掺杂层与所述至少一个沟槽侧壁隔离，基材表面。在另一个实施例中，提供附加的光敏元件，其包括横向设置的电荷收集区域，其接触感光元件的非横向设置的电荷收集区域，并且位于在衬底表面形成的掺杂层的下方。

29. 发明授权

US07659564B2 CMOS imager photodiode with enhanced capacitance 失效
标题翻译：具有增强电容的CMOS成像光电二极管
公开(公告)号：US07659564B2
公开(公告)日：2010-02-09
申请号：US11276085
申请日：2006-02-14
申请人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
发明人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
IPC分类号： H01L31/04
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
摘要翻译：一种像素传感器单元，具有具有表面的半导体衬底; 形成在具有与包括基板表面的物理边界完全隔离的非横向布置的电荷收集区域的基板中的感光元件。感光元件包括具有形成在第一导电类型材料的衬底中的侧壁的沟槽; 与所述侧壁中的至少一个相邻形成的第二导电类型材料的第一掺杂层; 以及形成在所述第一掺杂层和所述至少一个沟槽侧壁之间并形成在所述衬底的表面处的所述第一导电类型材料的第二掺杂层，所述第二掺杂层将所述第一掺杂层与所述至少一个沟槽侧壁隔离，基材表面。在另一个实施例中，提供附加的光敏元件，其包括横向设置的电荷收集区域，其接触感光元件的非横向设置的电荷收集区域，并且位于在衬底表面形成的掺杂层的下方。

30. 发明申请

US20110193146A1 Charge Carrier Barrier for Image Sensor 审中-公开
标题翻译：图像传感器的充电载波屏障
公开(公告)号：US20110193146A1
公开(公告)日：2011-08-11
申请号：US13089234
申请日：2011-04-18
申请人： James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe
发明人： James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Mark D. Jaffe
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vicinity of the dark current correction pixel cell and the buffer pixel cell resembles an active pixel cell. Thus, an environment surrounding the dark current correction pixel cell is similar to the environment surrounding an active pixel cell.
摘要翻译：像素传感器结构，制造方法和操作方法。公开了一种缓冲像素单元，其包括用于防止杂散电荷载流子到达暗电流校正像素单元的阻挡区域。缓冲像素单元位于暗电流校正像素单元附近，并且缓冲像素单元类似于有源像素单元。因此，围绕暗电流校正像素单元的环境与有源像素单元周围的环境相似。

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