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1. 发明申请

US20080296476A1 PIXEL SENSOR CELL FOR COLLECTING ELECTIONS AND HOLES 失效
标题翻译：用于收集选择和角色的像素传感器单元
公开(公告)号：US20080296476A1
公开(公告)日：2008-12-04
申请号：US12172306
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

2. 发明授权

US07633042B2 Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes 失效
标题翻译：像素传感器单元具有围绕用于收集电子和空穴的收集阱区的钉扎层
公开(公告)号：US07633042B2
公开(公告)日：2009-12-15
申请号：US12172306
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Lolseau
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

3. 发明授权

US07563636B2 Method of forming a pixel sensor cell for collecting electrons and holes 失效
标题翻译：形成用于收集电子和空穴的像素传感器单元的方法
公开(公告)号：US07563636B2
公开(公告)日：2009-07-21
申请号：US12172304
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

4. 发明申请

US20080274578A1 METHOD OF FORMING A PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 失效
标题翻译：形成用于收集电子和孔的像素传感器单元的方法
公开(公告)号：US20080274578A1
公开(公告)日：2008-11-06
申请号：US12172304
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

5. 发明授权

US07439561B2 Pixel sensor cell for collecting electrons and holes 失效
标题翻译：用于收集电子和空穴的像素传感器单元
公开(公告)号：US07439561B2
公开(公告)日：2008-10-21
申请号：US11161535
申请日：2005-08-08
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L27/148 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

6. 发明授权

US07732841B2 Pixel sensor cell for collecting electrons and holes 有权
标题翻译：用于收集电子和空穴的像素传感器单元
公开(公告)号：US07732841B2
公开(公告)日：2010-06-08
申请号：US12172309
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L27/148 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

7. 发明申请

US20080272399A1 PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 有权
公开(公告)号：US20080272399A1
公开(公告)日：2008-11-06
申请号：US12172305
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

8. 发明授权

US07977711B2 Pixel sensor cell for collecting electrons and holes 有权
标题翻译：用于收集电子和空穴的像素传感器单元
公开(公告)号：US07977711B2
公开(公告)日：2011-07-12
申请号：US12172305
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L27/148 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

9. 发明申请

US20080272400A1 PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES 有权
标题翻译：用于收集电子和孔的像素传感器单元
公开(公告)号：US20080272400A1
公开(公告)日：2008-11-06
申请号：US12172309
申请日：2008-07-14
申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
发明人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689 , H01L31/035281
摘要： The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
摘要翻译：本发明是像素传感器单元及其制造方法。像素传感器单元对于给定的光量大约使可用信号加倍。本发明的器件利用通过在像素传感器单元电路中照射光子而产生的空穴。具有降低的复杂度的像素传感器单元包括形成在基板的表面下面的n型收集阱区域，用于收集由电子辐射照射在像素传感器单元上产生的电子以及形成在基板表面下方的p型收集阱区域用于收集由撞击光子产生的孔。具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小的第一输入和第二输入的信号。

10. 发明授权

US08440490B2 CMOS imager photodiode with enhanced capacitance 有权
标题翻译：具有增强电容的CMOS成像光电二极管
公开(公告)号：US08440490B2
公开(公告)日：2013-05-14
申请号：US13288686
申请日：2011-11-03
申请人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
发明人： James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689 , H01L31/035281
摘要： A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.
摘要翻译：一种制造像素传感器单元的方法，该像素传感器单元包括具有非横向放置的电荷收集区域的感光元件。该方法包括在第一导电类型材料的衬底中形成沟槽凹槽，并用具有第二导电类型材料的材料填充沟槽凹槽。然后将第二导电类型材料从填充的沟槽材料扩散到围绕沟槽的衬底区域，以形成非横向布置的电荷收集区域。去除填充的沟槽材料以提供沟槽凹槽，并且用具有第一导电类型材料的材料填充沟槽凹槽。表面注入层形成在具有第一导电类型材料的沟槽的任一侧。沟槽型感光元件的收集区域由向外扩散的第二导电型材料形成，并与衬底表面隔离。

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