专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08937281B2 Method for examining a sample by using a charged particle beam 有权
标题翻译：通过使用带电粒子束来检查样品的方法
公开(公告)号：US08937281B2
公开(公告)日：2015-01-20
申请号：US13541618
申请日：2012-07-03
申请人： Yan Zhao , Jack Jau , Wei Fang
发明人： Yan Zhao , Jack Jau , Wei Fang
IPC分类号： H01J37/26 , H01J37/28
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
摘要翻译：一种用扫描带电粒子束成像装置检查样品的方法。首先，在样品的表面上指定图像区域和扫描区域。这里，图像区域在扫描区域内完全重叠。接下来，通过使用带电粒子束沿着既不平行也不垂直于扫描区域的取向的方向来扫描扫描区域。可能的是，与图像区域重叠的扫描区域的仅一部分暴露于带电粒子束。图像区域的形状和尺寸也可能与扫描区域的形状和尺寸基本相同，使得由带电粒子束投射的区域的尺寸几乎等于图像区域的尺寸。

22. 发明授权

US08884224B2 Charged particle beam imaging assembly and imaging method thereof 有权
标题翻译：带电粒子束成像组件及其成像方法
公开(公告)号：US08884224B2
公开(公告)日：2014-11-11
申请号：US12420200
申请日：2009-04-08
申请人： Wei Fang , Jack Jau , Yan Zhao
发明人： Wei Fang , Jack Jau , Yan Zhao
IPC分类号： H01J37/28 , H01J37/30 , H01J37/02
CPC分类号： H01J37/28 , H01J37/026 , H01J2237/004 , H01J2237/0044 , H01J2237/0048
摘要： A method for enhancing the quality of a charged particle microscopic image of a sample is disclosed. The image is formed by a charged particle beam imaging system. The method comprising: scanning, using a first scanning beam, a surface of the sample in at least one first scan line; and scanning, using a second scanning beam, the sample surface in at least one second scan line, wherein said second scanning beam is scanned across said sample surface during a time interval between the end of said first scan lines and the beginning of the next said first scan lines. Application of the proposed method as a charged particle beam imaging system is also disclosed.
摘要翻译：公开了一种提高样品带电粒子显微镜图像质量的方法。该图像由带电粒子束成像系统形成。该方法包括：使用第一扫描光束在至少一个第一扫描线中扫描样品的表面; 以及使用第二扫描光束扫描至少一个第二扫描线中的样品表面，其中所述第二扫描光束在所述第一扫描线的末端与所述第一扫描线的开始之间的时间间隔期间跨越所述样品表面扫描第一条扫描线。还公开了所提出的方法作为带电粒子束成像系统的应用。

23. 发明授权

US08805054B2 Method and system of classifying defects on a wafer 有权
标题翻译：在晶片上分类缺陷的方法和系统
公开(公告)号：US08805054B2
公开(公告)日：2014-08-12
申请号：US13269038
申请日：2011-10-07
申请人： Wei Fang , Zhao-Li Zhang , Jack Jau
发明人： Wei Fang , Zhao-Li Zhang , Jack Jau
IPC分类号： G06K9/00
CPC分类号： G06T7/0008 , G06T7/001 , G06T2207/20081 , G06T2207/30148
摘要： A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.
摘要翻译：提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。系统有一些模块分别对应于该方法的步骤。

24. 发明授权

US08712184B1 Method and system for filtering noises in an image scanned by charged particles 有权
标题翻译：用于过滤由带电粒子扫描的图像中的噪声的方法和系统
公开(公告)号：US08712184B1
公开(公告)日：2014-04-29
申请号：US13311043
申请日：2011-12-05
申请人： Chad Liao , Futang Peng , Chuan Li , Alina Wang , Zhao-Li Zhang , Wei Fang , Jack Jau
发明人： Chad Liao , Futang Peng , Chuan Li , Alina Wang , Zhao-Li Zhang , Wei Fang , Jack Jau
IPC分类号： G06K9/40 , G06K9/00 , G01N23/00
CPC分类号： G06K9/40 , G01N23/225 , G06K9/036 , G06T5/002 , G06T7/0002 , G06T2207/20012 , G06T2207/30148 , G06T2207/30168
摘要： A method for filtering noises in an image scanned by charged particles includes steps of grouping pixels with similar types in the image into a plurality of pixel groups; and removing noises for each pixel group in the image according to a corresponding noise model to obtain the scanned image with better quality and/or contrast. A system for filtering noises in an image scanned by charged particles is also disclosed.
摘要翻译：用于对由带电粒子扫描的图像中的噪声进行滤波的方法包括将图像中具有相似类型的像素分组为多个像素组的步骤; 并且根据相应的噪声模型去除图像中的每个像素组的噪声，以获得具有更好质量和/或对比度的扫描图像。还公开了一种用于过滤由带电粒子扫描的图像中的噪声的系统。

25. 发明授权

US08692214B2 Charged particle beam inspection method 有权
标题翻译：带电粒子束检查方法
公开(公告)号：US08692214B2
公开(公告)日：2014-04-08
申请号：US12540357
申请日：2009-08-12
申请人： Yan Zhao , Jack Jau
发明人： Yan Zhao , Jack Jau
IPC分类号： G21G5/00
CPC分类号： G01N23/2206 , G01N23/2251 , G01N2223/611
摘要： An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups of scan lines.
摘要翻译：公开了一种用于在该区域内形成用于缺陷检查的样品上基本相同区域的图像的成像方法和装置。所公开的方法包括通过重复地形成一组n条扫描线Y次，对该区域上的带电粒子束进行线扫描以形成多个n×Y扫描线。在每组n条扫描线的形成过程中，在扫描带电粒子束之前或同时，光束从一行扫描到另一条扫描线被选择性地照射在该区域上。此外，在每组n条扫描线的形成期间，光束的照明条件选择性地从一条扫描线变化到另一条扫描线。重复形成单个n条扫描线的条件，以形成所有Y组扫描线。

26. 发明申请

US20100158346A1 METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER 审中-公开
标题翻译：在WAFER上分类缺陷的方法和系统
公开(公告)号：US20100158346A1
公开(公告)日：2010-06-24
申请号：US12343201
申请日：2008-12-23
申请人： Wei FANG , Zhao-Li Zhang , Jack Jau
发明人： Wei FANG , Zhao-Li Zhang , Jack Jau
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： Method of classifying the defects on a wafer having some same chips and corresponding system. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.
摘要翻译：对具有相同芯片和相应系统的晶片上的缺陷进行分类的方法。在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。系统有一些模块分别对应于该方法的步骤。

27. 发明授权

US07474001B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 有权
标题翻译：基于半导体晶片制造中的测试结构的通孔/接触孔蚀刻工艺的在线监测方法
公开(公告)号：US07474001B2
公开(公告)日：2009-01-06
申请号：US11452544
申请日：2006-06-13
申请人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76802 , H01L22/26
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.
摘要翻译：描述了一种基于测试结构进行通孔/接触蚀刻工艺在线监测的方法。测试结构由布局不同尺寸和密度的通孔/接触孔组成，使得对于某些工艺，微加载或RIE滞后引起的不均匀蚀刻速率在一些区域产生蚀刻不良并且在其它区域中过度蚀刻。使用扫描电子显微镜来区分电压对比图像中的这些蚀刻差异。图像处理和简单校准将这些电压对比图像转换成表征蚀刻工艺的“指纹”图像，就厚度过蚀刻或欠蚀刻而言。该图像的偏移或变形的公差可以设置为验证过程的均匀性。该图像也可用作监视长期过程参数移位以及晶圆到晶圆或批次间变化的度量。先进的过程控制（APC）可以与该图像的引导一起进行，以便避免潜在的电气缺陷，加速产出斜率。

28. 发明申请

US20070124807A1 Password update systems and methods 审中-公开
标题翻译：密码更新系统和方法
公开(公告)号：US20070124807A1
公开(公告)日：2007-05-31
申请号：US11289029
申请日：2005-11-29
申请人： Jack Jau
发明人： Jack Jau
IPC分类号： H04L9/32
CPC分类号： H04L9/3226 , H04L9/0891 , H04L63/0846
摘要： A password exchange method. A server responds to requests received from a client when a client password received therefrom matches a current password stored in the password update system. A first password and a second password are received and stored by the server. When the server utilizes the first password as the current password, the client also utilizes the first password as the client password. When the first password expires, the server automatically utilizes of the second password as the current password. When a request from the client fails to be responded, the client retransmits the request utilizing the second password as the client password. A fab may thereby avoid throughput loss due to password expiration and update.
摘要翻译：密码交换方式。当从其接收到的客户端密码与存储在密码更新系统中的当前密码相匹配时，服务器响应从客户端接收到的请求。第一个密码和第二个密码由服务器接收和存储。当服务器使用第一个密码作为当前密码时，客户端也会使用第一个密码作为客户端密码。当第一个密码到期时，服务器自动利用第二个密码作为当前密码。当客户端的请求无法响应时，客户端使用第二个密码重新发送请求作为客户端密码。因此，制造厂可以避免由于密码到期和更新而产生的吞吐量损失。

29. 发明申请

US20060234496A1 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 有权
公开(公告)号：US20060234496A1
公开(公告)日：2006-10-19
申请号：US11452544
申请日：2006-06-13
申请人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L22/26
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.

30. 发明授权

US07105436B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 有权
公开(公告)号：US07105436B2
公开(公告)日：2006-09-12
申请号：US10865230
申请日：2004-06-09
申请人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
IPC分类号： H01L21/4763
CPC分类号： H01L22/34 , H01L21/76802 , H01L22/24
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式