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21. 发明授权

US07704896B2 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US07704896B2
公开(公告)日：2010-04-27
申请号：US11336621
申请日：2006-01-20
申请人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括GeO x或GeO x N y的薄层的形成。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

22. 发明申请

US20130189837A1 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES 有权
公开(公告)号：US20130189837A1
公开(公告)日：2013-07-25
申请号：US13702992
申请日：2011-06-10
申请人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
发明人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
IPC分类号： H01L21/02
CPC分类号： H01L21/7685 , C23C16/0227 , C23C16/14 , C23C16/45525 , H01L21/02068 , H01L21/02697 , H01L21/28562 , H01L21/32051 , H01L21/32053 , H01L21/76826 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76883
摘要： Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

23. 发明申请

US20120270393A1 METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME 有权
标题翻译：金属硅化物，金属锗，其制备方法
公开(公告)号：US20120270393A1
公开(公告)日：2012-10-25
申请号：US13452402
申请日：2012-04-20
申请人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
发明人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
IPC分类号： H01L21/3205 , H01L21/3215
CPC分类号： H01L29/45 , C23C16/06 , C23C16/406 , C23C16/45527 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/3215 , H01L21/324 , H01L21/76843 , H01L21/76855 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66666 , H01L29/7827
摘要： In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
摘要翻译：一方面，提供了硅化和锗化的方法。在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。在界面层上形成金属氧化物。退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。在其它实施例中，直接沉积镍，并且不使用界面层。另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。在一些实施例中，镍薄膜通过ALD沉积。

24. 发明申请

US20090246367A1 METHODS FOR FORMING CARBON NANOTUBES 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US20090246367A1
公开(公告)日：2009-10-01
申请号：US12058565
申请日：2008-03-28
申请人： Hannu A. Huotari , Suvi P. Haukka
发明人： Hannu A. Huotari , Suvi P. Haukka
IPC分类号： B05D7/00
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02
摘要： Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
摘要翻译：提供了在用于成核碳纳米管生长的基底上形成粗糙金属表面，随后生长碳纳米管的方法。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。然后可以将粗糙化的金属表面用作引发碳纳米管生长的成核点。碳纳米管在与三维金属岛的形成相同的处理室（原地）生长，而不将基板暴露于空气中。

25. 发明授权

US09129897B2 Metal silicide, metal germanide, methods for making the same 有权
标题翻译：金属硅化物，锗化锗，制造方法
公开(公告)号：US09129897B2
公开(公告)日：2015-09-08
申请号：US13452402
申请日：2012-04-20
申请人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
发明人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
IPC分类号： H01L23/528 , H01L21/285 , C23C16/06 , C23C16/40 , C23C16/455 , H01L29/66 , H01L29/78 , H01L29/45 , H01L29/49
CPC分类号： H01L29/45 , C23C16/06 , C23C16/406 , C23C16/45527 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/3215 , H01L21/324 , H01L21/76843 , H01L21/76855 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66666 , H01L29/7827
摘要： In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
摘要翻译：一方面，提供了硅化和锗化的方法。在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。在界面层上形成金属氧化物。退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。在其它实施例中，直接沉积镍，并且不使用界面层。另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。在一些实施例中，镍薄膜通过ALD沉积。

26. 发明授权

US08545936B2 Methods for forming carbon nanotubes 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US08545936B2
公开(公告)日：2013-10-01
申请号：US12058565
申请日：2008-03-28
申请人： Hannu A. Huotari , Suvi P. Haukka
发明人： Hannu A. Huotari , Suvi P. Haukka
IPC分类号： B05D7/00
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02
摘要： Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
摘要翻译：提供了在用于成核碳纳米管生长的基底上形成粗糙金属表面，随后生长碳纳米管的方法。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。然后可以将粗糙化的金属表面用作引发碳纳米管生长的成核点。碳纳米管在与三维金属岛的形成相同的处理室（原地）生长，而不将基板暴露于空气中。

27. 发明申请

US20130115768A1 METHODS FOR DEPOSITING NICKEL FILMS AND FOR MAKING NICKEL SILICIDE AND NICKEL GERMANIDE 有权
标题翻译：沉积镍膜和制备镍硅胶和镍基锗的方法
公开(公告)号：US20130115768A1
公开(公告)日：2013-05-09
申请号：US13592025
申请日：2012-08-22
申请人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
发明人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
IPC分类号： H01L21/768
CPC分类号： H01L21/28518 , H01L21/28052 , H01L21/28568 , H01L21/321 , H01L21/32133 , H01L21/3215 , H01L21/76843 , H01L21/76855 , H01L21/76886 , H01L29/456 , H01L29/665 , H01L29/78
摘要： In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
摘要翻译：一方面，提供了硅化和锗化的方法。在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。在界面层上形成金属氧化物。退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。在其它实施例中，直接沉积镍，并且不使用界面层。另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。在一些实施例中，镍薄膜通过ALD沉积。镍薄膜可以直接用于硅化和锗化工艺。

28. 发明授权

US08025922B2 Enhanced deposition of noble metals 有权
标题翻译：增强贵金属的沉积
公开(公告)号：US08025922B2
公开(公告)日：2011-09-27
申请号：US11375819
申请日：2006-03-14
申请人： Suvi P. Haukka , Marko J. Tuominen , Antti Rahtu
发明人： Suvi P. Haukka , Marko J. Tuominen , Antti Rahtu
IPC分类号： C23C16/00
CPC分类号： C23C16/08 , C23C16/0218 , C23C16/18 , C23C16/45525 , H01L21/28562
摘要： The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
摘要翻译：本发明一般涉及通过原子层沉积来增强在衬底上沉积贵金属薄膜的方法。使用气态卤化物或金属有机化合物进行处理减少了在特定表面上沉积贵金属的孵育时间。该方法可用于促进选择性沉积。例如，可以通过用卤化物反应物预处理来提高贵金属在高k材料上相对于绝缘体的选择性沉积。此外，可以使用卤化物处理以避免沉积在反应室的石英壁上。

29. 发明授权

US06852635B2 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes 有权
标题翻译：在集成电路金属化方案中无障碍沉积阻挡层的方法
公开(公告)号：US06852635B2
公开(公告)日：2005-02-08
申请号：US10731656
申请日：2003-12-08
申请人： Alessandra Satta , Karen Maex , Kai-Erik Elers , Ville Antero Saanila , Pekka Juha Soininen , Suvi P. Haukka
发明人： Alessandra Satta , Karen Maex , Kai-Erik Elers , Ville Antero Saanila , Pekka Juha Soininen , Suvi P. Haukka
IPC分类号： C23C16/02 , C23C16/04 , C23C16/08 , C23C16/32 , C23C16/44 , C23C16/455 , C30B25/02 , H01L21/205 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76814 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/32 , C23C16/44 , C23C16/45525 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/76807 , H01L21/76831 , H01L21/76838 , H01L21/76844 , H01L21/76876 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.
摘要翻译：公开了用于选择性沉积在所需材料上的方法。特别地，与导电表面相比，阻隔材料选择性地形成在绝缘表面上。在接触形成和沟槽填充，特别是镶嵌和双镶嵌金属化的情况下，该方法有利地将绝缘表面与阻挡材料连接。选择性形成允许沉积是“无底的”，因此当在绝缘表面上形成阻挡层之后，当另外的导电材料沉积到开口中时，导电材料留在暴露于直接金属 - 金属接触的通孔底部。期望地，通过原子层沉积（ALD）实现选择性沉积，导致开口中的绝缘侧壁的高度保形覆盖。

30. 发明授权

US06482262B1 Deposition of transition metal carbides 有权
标题翻译：过渡金属碳化物沉积
公开(公告)号：US06482262B1
公开(公告)日：2002-11-19
申请号：US09687204
申请日：2000-10-13
申请人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Suvi P. Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1632
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
摘要翻译：本发明一般涉及沉积过渡金属碳化物薄膜的方法。特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。公开了各种金属和碳源气体。该方法适用于在半导体制造中形成金属碳化物薄膜，特别是在集成电路内形成薄的，导电的扩散阻挡层。

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