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21. 发明申请

US20090267267A1 IMPRINT METHOD 有权
标题翻译： IMPRINT方法
公开(公告)号：US20090267267A1
公开(公告)日：2009-10-29
申请号：US12426527
申请日：2009-04-20
申请人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
发明人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
IPC分类号： B29C59/00
CPC分类号： B29C37/006 , B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes contacting a template on a substrate, the template including a pattern to be transferred on the substrate, separating the template from the substrate, and removing particle adhered on the template before contacting the template on the substrate, the removing the particle including pressing the template on an adhesive member and separating the pressed template from the adhesive member, wherein adhesiveness of the adhesive member to the template is higher than adhesiveness of the adhesive member to the substrate.
摘要翻译：压印方法包括使基板上的模板接触，所述模板包括要在基板上转印的图案，将模板与基板分离，以及在与基板之间的模板接触之前除去附着在模板上的颗粒，除去包括将模板压在粘合剂构件上并将压制模板与粘合构件分离，其中粘合剂与模板的粘合性高于粘合剂与基材的粘合性。

22. 发明申请

US20090095711A1 MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：微生物装置和装置制造方法
公开(公告)号：US20090095711A1
公开(公告)日：2009-04-16
申请号：US12237806
申请日：2008-09-25
申请人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
发明人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
IPC分类号： B44C1/22 , B29C43/02
CPC分类号： B29C43/021 , B29C33/303 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/525 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7003 , G03F9/7042 , G03F9/7088
摘要： A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.
摘要翻译：一种用于将包括图案的原稿板压在基板上以将图案转印到基板上的微加工装置包括：第一测量单元，用于测量基板和基板上方的板之间的相对位置偏移;位置校正单元，用于校正相对位置在基板和板之间，基于由第一测量单元测量的相对位置位移，将图案转印到基板的第一预定位置上;按压单元，用于将基板上方的基板向下压在基板上，在通过位置校正单元校正基板和板之间的相对位置偏移的状态下，在基板上转印图案;以及第二测量单元，用于测量在基板上传送的图案与先前形成的图案之间的相对位置关系在基板上。

23. 发明授权

US08883373B2 Method for manufacturing photo mask, method for manufacturing semiconductor device, and program 有权
标题翻译：制造光掩模的方法，制造半导体器件的方法和程序
公开(公告)号：US08883373B2
公开(公告)日：2014-11-11
申请号：US13679396
申请日：2012-11-16
申请人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
发明人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： G03F1/62 , G03F1/64
CPC分类号： G03F1/62
摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.
摘要翻译：根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合基于第一数据和第二数据。

24. 发明申请

US20130130157A1 METHOD FOR MANUFACTURING PHOTO MASK, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM 有权
标题翻译：制造摄影胶片的方法，制造半导体器件的方法和程序
公开(公告)号：US20130130157A1
公开(公告)日：2013-05-23
申请号：US13679396
申请日：2012-11-16
申请人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
发明人： Akiko Mimotogi , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： G03F1/62
CPC分类号： G03F1/62
摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.
摘要翻译：根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合基于第一数据和第二数据。

25. 发明授权

US08180472B2 Control method for semiconductor manufacturing apparatus, control system for semiconductor manufacturing apparatus, and manufacturing method for semiconductor device 失效
标题翻译：半导体制造装置的控制方法，半导体制造装置的控制系统以及半导体装置的制造方法
公开(公告)号：US08180472B2
公开(公告)日：2012-05-15
申请号：US12497349
申请日：2009-07-02
申请人： Masayuki Hatano , Tetsuro Nakasugi
发明人： Masayuki Hatano , Tetsuro Nakasugi
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31265 , G05B2219/32196 , Y02P90/22
摘要： A control method for a semiconductor manufacturing apparatus, comprising: generating, as log data, a history of operation states of the semiconductor manufacturing apparatus when a wafer is processed by the semiconductor manufacturing apparatus; specifying, based on the log data, processing results in which operation states of the semiconductor manufacturing apparatus are abnormal states out of processing results after the processing of the wafer processed by the semiconductor manufacturing apparatus as abnormal processing results; creating control data for the semiconductor manufacturing apparatus based on the processing results and the abnormal processing results; and controlling the processing by the semiconductor manufacturing apparatus using the control data.
摘要翻译：一种半导体制造装置的控制方法，包括：当半导体制造装置处理晶片时，产生作为对数数据的半导体制造装置的工作状态的历史; 基于对数数据，指定在由半导体制造装置处理的晶片处理之后的处理结果中作为异常处理结果的半导体制造装置的操作状态为异常状态的处理结果; 基于处理结果和异常处理结果创建半导体制造装置的控制数据; 以及使用控制数据来控制半导体制造装置的处理。

26. 发明授权

US08118585B2 Pattern formation method and a method for manufacturing a semiconductor device 有权
标题翻译：图案形成方法及半导体装置的制造方法
公开(公告)号：US08118585B2
公开(公告)日：2012-02-21
申请号：US12882944
申请日：2010-09-15
申请人： Masayuki Hatano , Suigen Kyoh , Tetsuro Nakasugi
发明人： Masayuki Hatano , Suigen Kyoh , Tetsuro Nakasugi
IPC分类号： A01J21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/00
摘要： In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the workpiece substrate. The template includes a pattern formation region and a circumferential region around the pattern formation region. A pattern for circuit pattern formation is formed in the pattern formation region and the projection is formed in the circumferential region. The method can form a resin pattern by curing the resin material in a state of pressing the template. In addition, the method can separate the template from the resin pattern.
摘要翻译：在一个实施例中，公开了图案形成方法。该方法可以将液态树脂材料放置在工件基板上。该方法可以将模板压靠树脂材料并测量模板的突起的下表面与工件基板的上表面之间的距离。模板包括图案形成区域和围绕图案形成区域的周边区域。在图案形成区域中形成用于电路图案形成的图案，并且在周向区域中形成突起。该方法可以通过在压制模板的状态下固化树脂材料来形成树脂图案。此外，该方法可以将模板与树脂图案分离。

27. 发明授权

US07202488B2 Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device 失效
标题翻译：校正系统，偏转失真校正方法，制造半导体器件的程序和方法
公开(公告)号：US07202488B2
公开(公告)日：2007-04-10
申请号：US10948555
申请日：2004-09-24
申请人： Takumi Ota , Tetsuro Nakasugi
发明人： Takumi Ota , Tetsuro Nakasugi
IPC分类号： H01J37/302 , H01J37/30 , G03C5/00
CPC分类号： H01J37/304 , H01J37/153 , H01J2237/31754
摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.
摘要翻译：校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量，根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

28. 发明申请

US20060017013A1 Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device 失效
标题翻译：带电粒子束拉制设备，调整孔径掩模的方法和制造半导体器件的方法
公开(公告)号：US20060017013A1
公开(公告)日：2006-01-26
申请号：US11172996
申请日：2005-07-05
申请人： Takumi Ota , Tetsuro Nakasugi
发明人： Takumi Ota , Tetsuro Nakasugi
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.
摘要翻译：带电粒子束拉制设备包括带电粒子束源，具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模，用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分，从源极通过开口部分，旋转角度控制部分，以控制掩模之间的相对旋转角度，获取部分，以获得掩模之间的相对旋转角度，使得掩模之间的相对旋转角度的偏差落在预定范围内，基于通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果，以及指令部分，其指示旋转角度控制部分，使得旋转角度控制部分之间的相对旋转角度掩模是获得的旋转角度。

29. 发明申请

US20050256600A1 Electron beam lithography system, method of electron beam lithography, program and method for manufacturing a semiconductor device with direct writing 失效
标题翻译：电子束光刻系统，电子束光刻方法，用于制造具有直接写入的半导体器件的程序和方法
公开(公告)号：US20050256600A1
公开(公告)日：2005-11-17
申请号：US11097357
申请日：2005-04-04
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： H01J37/305 , G03B7/20 , H01J37/00 , H01J37/317 , H01L21/027 , G06F19/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J2237/31762
摘要： An electron beam lithography system includes: a lithography tool writing patterns onto substrates, which are classified into lots, respectively, using sequentially apertures through which electron beams, based on a specific processing procedures; an aperture manager managing the apertures; a request obtaining module obtaining processing requests of the lots; a processing procedure storing file storing processing procedures; a processing time calculating module calculating corresponding processing times of the lots using the apertures based on corresponding processing procedures defined for each of the lots; and an order deciding module deciding an order of processing the lots based on the processing times.
摘要翻译：电子束光刻系统包括：光刻工具，将基板上的图案分别按照特定的处理程序依次分成多个电子束; 管理孔的光圈管理器; 请求获取模块获取批次的处理请求; 存储文件存储处理过程的处理过程; 处理时间计算模块，基于针对每个批次定义的相应处理过程，使用所述孔来计算批次的相应处理时间; 以及基于处理时间决定处理批次的顺序的订单决定模块。

30. 发明申请

US20050088099A1 Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device 失效
标题翻译：校正系统，偏转失真校正方法，制造半导体器件的程序和方法
公开(公告)号：US20050088099A1
公开(公告)日：2005-04-28
申请号：US10948555
申请日：2004-09-24
申请人： Takumi Ota , Tetsuro Nakasugi
发明人： Takumi Ota , Tetsuro Nakasugi
IPC分类号： G03F1/68 , G03F1/76 , G03F1/78 , G03F7/20 , H01J25/22 , H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/304 , H01J37/153 , H01J2237/31754
摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.
摘要翻译：校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量，根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

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