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    • 22. 发明授权
    • Apparatus and method for pulling single crystal
    • 单晶拉丝装置及方法
    • US07063743B2
    • 2006-06-20
    • US10820885
    • 2004-04-09
    • Hideki WatanabeIsamu MiyamotoToshiyuki Fujiwara
    • Hideki WatanabeIsamu MiyamotoToshiyuki Fujiwara
    • C30B35/00
    • C30B15/14Y10T117/10Y10T117/1004Y10T117/1032Y10T117/1068Y10T117/1072
    • The present invention teaches an apparatus for pulling a single crystal, whereby a radial temperature gradient of a seed crystal and/or a neck is reduced to a minimum so as to inhibit occurrence of thermal stress and prevent induction of dislocations, thereby resulting in an improvement in dislocation-free rate of single crystals to be pulled in cases where a single crystal is pulled with a seed crystal and/or a neck being heated using an auxiliary heating device. The apparatus comprises a crucible to be charged with a melt, a heater located around the crucible, and an auxiliary heating device including a heating section which can be located so as to surround a seed crystal in a position near and above the melt, a transfer mechanism for withdrawing the heating section from a passing area of a single crystal, and a covering section to cover a clearance between the heating section and the seed crystal extending from the heating section.
    • 本发明教导了一种用于拉制单晶的装置,由此将晶种和/或颈部的径向温度梯度降低到最小,以便抑制热应力的发生并防止位错的诱导,从而导致改善 在使用辅助加热装置用晶种和/或颈部加热单晶的情况下,要拉拔单晶的无位错速率。 该装置包括一个装有熔体的坩埚,位于坩埚周围的一个加热器,以及一个辅助加热装置,它包括一个加热部分,该加热部分可以位于熔融物附近和上方的一个晶种周围, 从单晶经过区域取出加热部的机构,覆盖加热部与从加热部延伸的晶种间隙的覆盖部。