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21. 发明授权

US08354289B2 Method for manufacturing gallium nitride wafer 有权
公开(公告)号：US08354289B2
公开(公告)日：2013-01-15
申请号：US13019146
申请日：2011-02-01
申请人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
发明人： Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Kye-Jin Lee
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L21/302 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L21/02664
摘要： A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

22. 发明授权

US08258657B2 Vibration motor 失效
标题翻译：振动电机
公开(公告)号：US08258657B2
公开(公告)日：2012-09-04
申请号：US12760116
申请日：2010-04-14
申请人： Yong-Jin Kim , Hwa-Young Oh , Jee-Sung Lee , Seok-Jun Park , Je-Hyun Bang , Kwang-Hyung Lee , Kyoung-Ho Lee , Jun-Kun Choi , Ki-Suk Woo
发明人： Yong-Jin Kim , Hwa-Young Oh , Jee-Sung Lee , Seok-Jun Park , Je-Hyun Bang , Kwang-Hyung Lee , Kyoung-Ho Lee , Jun-Kun Choi , Ki-Suk Woo
IPC分类号： H02K33/00
CPC分类号： H02K33/16 , H02K15/02 , H02K15/14
摘要： A vibration motor is disclosed. In accordance with an embodiment of the present invention, the vibration motor includes a base, a vibrator, which reciprocates in the base, a protruding part, which is formed on at least one of the base and the vibrator, and an elastic body, which is interposed between the base and the vibrator and has a through-part formed therein and in which the protruding part is inserted into the through-part and the elastic body is coupled to the base or the vibrator by caulking or bending the protruding part which is protruded through the through-part. Thus, the vibration motor can have a uniform resonant frequency characteristic since a spring is coupled by way of caulking or bending.
摘要翻译：公开了一种振动电动机。根据本发明的实施例，振动电动机包括基座，在基座中往复运动的振动器，形成在基座和振动器中的至少一个上的突出部分和弹性体，其中插入在基座和振动器之间并且具有形成在其中的通孔部分，并且突出部分插入到通孔部分中，并且弹性体通过铆接或弯曲突出部分而被连接到基座或振动器突出穿过通孔。因此，振动电动机可以具有均匀的谐振频率特性，因为弹簧通过铆接或弯曲而联接。

23. 发明授权

US08198649B2 Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same 有权
标题翻译：在金属层上生长的化合物半导体衬底，其制造方法以及使用其的化合物半导体器件
公开(公告)号：US08198649B2
公开(公告)日：2012-06-12
申请号：US11982716
申请日：2007-11-02
申请人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
发明人： Yong-Jin Kim , Doo-Soo Kim , Ho-Jun Lee , Dong-Kun Lee
IPC分类号： H01L33/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/20 , H01L33/38
摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
摘要翻译：化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层层。并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

24. 发明授权

US08158496B2 Method for preparing compound semiconductor substrate 有权
标题翻译：化合物半导体衬底的制备方法
公开(公告)号：US08158496B2
公开(公告)日：2012-04-17
申请号：US12878225
申请日：2010-09-09
申请人： Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ji-Hoon Kim
发明人： Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee , Doo-Soo Kim , Ji-Hoon Kim
IPC分类号： H01L21/28
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02639 , H01L21/02642 , H01L21/02664
摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.
摘要翻译：提供了一种制备化合物半导体衬底的方法。该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为生长，使得衬底和化合物半导体外延层沿着空隙自我分离。球形球处理可以减少错位几代。此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

25. 发明申请

US20120068058A1 Apparatus and Method for Processing Substrate Using Neutralized Beams Including Applying a Voltage to a Substrate Support 有权
标题翻译：使用包括对基板支撑施加电压的中和束来处理基板的装置和方法
公开(公告)号：US20120068058A1
公开(公告)日：2012-03-22
申请号：US13306364
申请日：2011-11-29
申请人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
发明人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
IPC分类号： H05H3/02
CPC分类号： H01J37/30 , H01J2237/0041 , H01J2237/04756 , H01J2237/20 , H01J2237/31
摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
摘要翻译：提供了一种使用中和束来处理衬底的设备和方法。衬底处理装置包括被配置为形成离子源的离子源生成装置。离子提取装置被配置为从离子源提取和加速离子。离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

26. 发明申请

US20110143525A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体基板及其制造方法
公开(公告)号：US20110143525A1
公开(公告)日：2011-06-16
申请号：US13031425
申请日：2011-02-21
申请人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
发明人： Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
IPC分类号： H01L21/365
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02381 , H01L21/02428 , H01L21/0254
摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
摘要翻译：氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部朝向周边部分生长氮化物半导体膜时吸收或减小施加更大的应力。也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

27. 发明申请

US20110101799A1 LINEAR VIBRATOR 有权
标题翻译：线性振动器
公开(公告)号：US20110101799A1
公开(公告)日：2011-05-05
申请号：US12752669
申请日：2010-04-01
申请人： Ki-Suk Woo , Kyung-Ho Lee , Jun-Kun Choi , Yong-Jin Kim , Hwa-Young Oh , Je-Hyun Bang , Young-Bok Yoon , Suck-Jun Park , Kwang-Hyung Lee
发明人： Ki-Suk Woo , Kyung-Ho Lee , Jun-Kun Choi , Yong-Jin Kim , Hwa-Young Oh , Je-Hyun Bang , Young-Bok Yoon , Suck-Jun Park , Kwang-Hyung Lee
IPC分类号： H02K33/00
CPC分类号： H02K33/16
摘要： A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux.
摘要翻译：公开了线性振动器。根据本发明的实施例的线性振动器包括基座，耦合到基座的线圈单元，磁体组件，其形成与流过线圈单元的电流垂直的磁力的闭合电路并且其中磁体组件相对于线圈单元相对移动，以及弹性构件，其弹性地支撑磁体组件。因此，可以通过防止磁通量的泄漏来提供具有增加的驱动力的线性振动器。

28. 发明申请

US20110063128A1 APPARATUS AND METHOD FOR MONITORING CHAMBER STATUS IN SEMICONDUCTOR FABRICATION PROCESS 有权
标题翻译：用于监测半导体制造工艺中的室状态的装置和方法
公开(公告)号：US20110063128A1
公开(公告)日：2011-03-17
申请号：US12858691
申请日：2010-08-18
申请人： Sang-Wuk Park , Woo-Seok Kim , Yong-Jin Kim
发明人： Sang-Wuk Park , Woo-Seok Kim , Yong-Jin Kim
IPC分类号： H04J14/08
CPC分类号： H04J14/08 , H01L21/67069 , H01L21/67253
摘要： A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.
摘要翻译：室状态监视装置包括多个室，时分多路复用器，被配置为经由光纤探针从每个室接收光信号，以将每个光信号划分成具有预定持续时间的第一时隙，并将多路复用用于产生OTDM信号的第一时隙;被配置为根据波长接收和分散OTDM信号以测量频谱信息的多输入光发射分光器;以及控制器，被配置为将分散的OTDM信号的频谱信息划分为第二时隙以其间的预定时间间隔，根据室对第二时隙进行分类，以获得各个室的光信号的频谱信息，并且根据光信号的频谱信息来控制每个室中的端点检测相应的房间。

29. 发明申请

US20110006618A1 VIBRATION MOTOR 有权
标题翻译：振动电机
公开(公告)号：US20110006618A1
公开(公告)日：2011-01-13
申请号：US12638551
申请日：2009-12-15
申请人： Kyoung-Ho LEE , Jun-Kun Choi , Jae-woo Jun , Hwa-Young Oh , Kwang-Hyung Lee , Je-Hyun Bang , Seok-Jun Park , Yong-Jin Kim , Seung-Heon Han
发明人： Kyoung-Ho LEE , Jun-Kun Choi , Jae-woo Jun , Hwa-Young Oh , Kwang-Hyung Lee , Je-Hyun Bang , Seok-Jun Park , Yong-Jin Kim , Seung-Heon Han
IPC分类号： H02K33/16
CPC分类号： B06B1/045 , H02K33/16
摘要： A linear vibrator is disclosed. The linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively, and a plurality of leaf springs, which are interposed between the magnet and the base. Here, the plurality of leaf springs face one another and are coupled to one another Thus, the linear vibrator can increase the range of vibration displacement in a structure and increase the amount of vibration in the linear vibrator. Also, even though the linear vibrator becomes thinner, the range of displacement can be increased because the weight is vibrated horizontally.
摘要翻译：公开了线性振动器。线性振动器包括基座，耦合到基座的线圈单元，耦合到线圈单元的磁体，使得磁体可以相对移动，并且多个板簧插入在磁体和的基地。这里，多个板簧彼此面对并且彼此耦合。因此，线性振动器可以增加结构中的振动位移的范围并增加线性振动器中的振动量。此外，即使线性振动器变薄，由于重量水平振动，因此可以增加位移范围。

30. 发明申请

US20100166945A1 Methods of calculating thicknesses of layers and methods of forming layers using the same 审中-公开
标题翻译：计算层厚度的方法和使用其形成层的方法
公开(公告)号：US20100166945A1
公开(公告)日：2010-07-01
申请号：US12654721
申请日：2009-12-30
申请人： Ho-Ki Lee , Sung-Ho Han , Yong-Jin Kim
发明人： Ho-Ki Lee , Sung-Ho Han , Yong-Jin Kim
IPC分类号： C23C14/54 , C23C16/513
CPC分类号： C23C16/52
摘要： A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range.
摘要翻译：计算层的厚度的方法可以包括在室中的基板上形成层，测量来自室的光发射光谱数据，以及根据光发射光谱数据计算层的厚度。形成层的方法可以包括将层沉积在室中的衬底上，从腔室测量光发射光谱数据，使用光发射光谱数据计算层的厚度，并且当所计算的该层的厚度在目标厚度范围内。

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