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21. 发明授权

US08785932B2 IR sensing transistor and manufacturing method of display device including the same 有权
标题翻译：红外感测晶体管及包括其的显示装置的制造方法
公开(公告)号：US08785932B2
公开(公告)日：2014-07-22
申请号：US13182235
申请日：2011-07-13
申请人： Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
发明人： Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
IPC分类号： H01L33/50
CPC分类号： H01L31/18 , G02F1/13338 , G02F2001/13312 , G06F3/042 , H01L29/42384 , H01L29/78633
摘要： An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.
摘要翻译：根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。

22. 发明授权

US08698144B2 Display device with improved sensing mechanism 有权
标题翻译：具有改进感测机构的显示设备
公开(公告)号：US08698144B2
公开(公告)日：2014-04-15
申请号：US12731380
申请日：2010-03-25
申请人： Kyung-Sook Jeon , Kap-Soo Yoon , Woong-Kwon Kim , Sang-Youn Han , Jun-Ho Song , Sung-Hoon Yang , Byeong-Hoon Cho , Dae-Cheol Kim , Ki-Hun Jeong , Jung-Suk Bang
发明人： Kyung-Sook Jeon , Kap-Soo Yoon , Woong-Kwon Kim , Sang-Youn Han , Jun-Ho Song , Sung-Hoon Yang , Byeong-Hoon Cho , Dae-Cheol Kim , Ki-Hun Jeong , Jung-Suk Bang
IPC分类号： H01L33/00
CPC分类号： G02F1/13338 , G02F2001/13312 , G02F2203/11 , G06F3/0412 , G06F3/042
摘要： A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.
摘要翻译：一种显示面板，包括：衬底，设置在衬底上的感测晶体管，以及连接到感测晶体管并传输检测信号的读出晶体管。感测晶体管包括设置在上基板上的半导体层，设置在半导体层上的源电极和漏电极以及与源电极和漏电极上的半导体层重叠的栅电极。因此，在显示装置及其制造方法中，同时形成具有顶栅结构的红外感测晶体管，可见光感测晶体管和读出晶体管，从而可以减少制造工艺的数量和制造成本。

23. 发明授权

US08253896B2 Photonic sensor, method of manufacturing same, color filter substrate having same, and display device having the color filter substrate 有权
标题翻译：光电传感器，其制造方法，具有该滤光器基板的滤色器基板以及具有滤色器基板的显示装置
公开(公告)号：US08253896B2
公开(公告)日：2012-08-28
申请号：US12898250
申请日：2010-10-05
申请人： Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong , Kyung-Sook Jeon , Seung-Mi Seo
发明人： Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong , Kyung-Sook Jeon , Seung-Mi Seo
IPC分类号： G02F1/1335
CPC分类号： H01L27/1446 , B82Y15/00 , B82Y20/00 , G02B5/201 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.
摘要翻译：光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。

24. 发明授权

US08174015B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08174015B2
公开(公告)日：2012-05-08
申请号：US12761958
申请日：2010-04-16
申请人： Ki-Hun Jeong , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun Jeong , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L29/04
CPC分类号： G06F3/0421 , G06F3/0412 , H01L27/1251 , H01L27/323
摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
摘要翻译：显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

25. 发明申请

US20100134731A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20100134731A1
公开(公告)日：2010-06-03
申请号：US12477342
申请日：2009-06-03
申请人： Kyung-Sook Jeon , Jang-Soo Kim , Hwa-Yeul Oh
发明人： Kyung-Sook Jeon , Jang-Soo Kim , Hwa-Yeul Oh
IPC分类号： G02F1/1339 , G02F1/1333
CPC分类号： G02F1/13624 , G02F1/136209 , G02F2001/134345 , G02F2001/136222
摘要： The present application relates to a liquid crystal display including a first substrate, a plurality of gate lines, a plurality of data lines, thin film transistors connected to the gate and data lines, a barrier rib formed on the data lines, and pixel electrodes connected to the thin film transistors. The thin film transistors can be formed using a colored organic film that has an optical density in a range of 1 to 3. Color filters fill the regions surrounded by the barrier rib. Pixel electrodes can be formed on the color filters. A common electrode can be formed on the second substrate facing the first substrate. A liquid crystal layer can be situated between the first and second substrates, which are spaced apart at a predetermined distance by spacers.
摘要翻译：本申请涉及一种液晶显示器，包括第一基板，多条栅极线，多条数据线，连接到栅极和数据线的薄膜晶体管，形成在数据线上的障壁，以及连接的像素电极到薄膜晶体管。可以使用光密度在1〜3范围内的有色有机膜来形成薄膜晶体管。滤色器填充由障壁围绕的区域。像素电极可以形成在滤色器上。可以在面向第一基板的第二基板上形成公共电极。液晶层可以位于第一和第二基板之间，间隔物以预定距离隔开。

26. 发明授权

US09224900B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US09224900B2
公开(公告)日：2015-12-29
申请号：US12899409
申请日：2010-10-06
申请人： Ki-Hun Jeong , Sung-Hoon Yang , Kap-Soo Yoon , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun Jeong , Sung-Hoon Yang , Kap-Soo Yoon , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L31/113 , G02F1/133
CPC分类号： H01L31/1136 , G02F1/13318 , G06F2203/04103
摘要： A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.
摘要翻译：一种使用红外线感测晶体管的触敏显示装置。晶体管被配置并且包括指定的材料，以允许它们用更少的光刻工艺形成，从而降低成本和制造时间。

27. 发明授权

US08907924B2 Information detection display 有权
标题翻译：信息检测显示
公开(公告)号：US08907924B2
公开(公告)日：2014-12-09
申请号：US13090991
申请日：2011-04-20
申请人： Sang-Youn Han , Dong-Kwon Kim , Kyung-Sook Jeon , Sung-Hoon Yang , Joo-Han Kim , Woong-Kwon Kim , Suk-Won Jung , Byeong-Hoon Cho , Dae-Cheol Kim , Hui-Sung Lee , Ki-Hun Jeong , Seung-Mi Seo , Jung-Suk Bang , Kun-Wook Han , Mi-Seon Seo
发明人： Sang-Youn Han , Dong-Kwon Kim , Kyung-Sook Jeon , Sung-Hoon Yang , Joo-Han Kim , Woong-Kwon Kim , Suk-Won Jung , Byeong-Hoon Cho , Dae-Cheol Kim , Hui-Sung Lee , Ki-Hun Jeong , Seung-Mi Seo , Jung-Suk Bang , Kun-Wook Han , Mi-Seon Seo
IPC分类号： G06F3/042 , G06F3/041
CPC分类号： G06F3/0418 , G06F3/042
摘要： An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.
摘要翻译：信息检测装置包括：多个光检测单元，每个光检测单元被配置为检测光; 多个传感器扫描驱动器，每个传感器扫描驱动器被配置为将传感器扫描信号施加到光感测单元; 感测信号处理器，被配置为接收由所述光感测单元检测到的位置信息; 多个偏置施加单元，每个偏置施加单元被配置为向所述光感测单元施加偏置电压; 其中每个偏置施加单元施加不同的偏置电压极性。

28. 发明授权

US08445909B2 Sensor array substrate and method of fabricating the same 有权
标题翻译：传感器阵列基板及其制造方法
公开(公告)号：US08445909B2
公开(公告)日：2013-05-21
申请号：US13102824
申请日：2011-05-06
申请人： Kyung-Sook Jeon , Jun-Ho Song , Sang-Youn Han , Sung-Hoon Yang , Dae-Cheol Kim , Ki-Hun Jeong , Mi-Seon Seo
发明人： Kyung-Sook Jeon , Jun-Ho Song , Sang-Youn Han , Sung-Hoon Yang , Dae-Cheol Kim , Ki-Hun Jeong , Mi-Seon Seo
IPC分类号： H01L29/04
CPC分类号： H01L27/1446 , H01L27/14683
摘要： Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.
摘要翻译：提供传感器阵列基板及其制造方法。传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电相互连接。

29. 发明授权

US08325302B2 Visible-light blocking member, infrared sensor including the visible-light blocking member, and liquid crystal display device including the infrared sensor 有权
标题翻译：可见光阻挡构件，包括可见光阻挡构件的红外传感器和包括红外传感器的液晶显示装置
公开(公告)号：US08325302B2
公开(公告)日：2012-12-04
申请号：US12722766
申请日：2010-03-12
申请人： Byeong-Hoon Cho , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Kyung-Sook Jeon , Woong-Kwon Kim , Sang-Youn Han , Dae-Cheol Kim , Jung-Suk Bang
发明人： Byeong-Hoon Cho , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Kyung-Sook Jeon , Woong-Kwon Kim , Sang-Youn Han , Dae-Cheol Kim , Jung-Suk Bang
IPC分类号： G02F1/1335
CPC分类号： C22C28/00 , G01J1/02 , G01J1/0209 , G01J1/0219 , G01J1/0488 , G01J1/4228 , G02F1/133512 , G02F2001/13312 , G06F3/0412 , G06F3/042
摘要： In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.
摘要翻译：在可见光阻挡构件中，包括可见光阻挡构件的红外传感器和包括红外传感器的液晶显示器，可见光阻挡构件是包括无定形锗或无定形锗化合物的结构，并且具有较高的对于可见光区域的波长的红外线区域的波长的透射率。因此，可以通过将可见光阻挡构件施加到红外传感器来增加对红外线的敏感度。

30. 发明申请

US20110057189A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110057189A1
公开(公告)日：2011-03-10
申请号：US12761958
申请日：2010-04-16
申请人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： G06F3/0421 , G06F3/0412 , H01L27/1251 , H01L27/323
摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
摘要翻译：显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

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