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21. 发明授权

US07768743B2 Perpendicular magnetic recording write head with trailing shield having notch and throat height defined by nonmagnetic pad layer 有权
标题翻译：垂直磁记录写头，后挡板具有由非磁性垫层限定的凹口和喉部高度
公开(公告)号：US07768743B2
公开(公告)日：2010-08-03
申请号：US11747656
申请日：2007-05-11
申请人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi
发明人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/315
摘要： A perpendicular magnetic recording write head supported on an air-bearing slider has a magnetic write pole (WP) with a WP end at the air-bearing surface (ABS) having a width generally equal to the data track width and a trailing shield (TS) with a TS end generally coplanar with the WP end. The TS has a first portion with a width at the TS end substantially wider than the width of the WP end and a TS notch (TSN) portion with a width at the TS end generally equal to the width of the WP end. The TS first portion has a height in a direction perpendicular to the ABS, and the TSN portion has a throat height (TH) in a direction perpendicular to the ABS that is less than the height of the TS first portion. A nonmagnetic gap layer separates the WP from the TSN portion and a nonmagnetic pad layer separates the WP from the TS first portion. The pad layer has a front edge generally parallel to and recessed from the ABS that defines the TH of the TSN portion, and a thickness that defines the length of the TSN portion in the along-the-track direction.
摘要翻译：支撑在空气轴承滑块上的垂直磁记录写头具有在空气轴承表面（ABS）上具有WP端的磁性写入极（WP），其宽度大体上等于数据磁道宽度和后屏蔽（TS ），其TS端通常与WP端共面。 TS具有第一部分，其宽度在TS端大大宽于WP端的宽度，TS陷口（TSN）部分的宽度在TS端大致等于WP端的宽度。 TS第一部分具有垂直于ABS的方向的高度，并且TSN部分在垂直于ABS的方向上具有小于TS第一部分的高度的喉部高度（TH）。非磁隙层将WP与TSN部分分开，非磁性垫层将WP与TS第一部分分离。衬垫层具有大致平行于ABS并且从ABS凹入的前边缘，其限定TSN部分的TH，以及限定沿着轨道方向的TSN部分的长度的厚度。

22. 发明申请

US20090128964A1 METHOD FOR MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH WRAP AROUND MAGNETIC TRAILING AND SIDE SHIELDS 有权
标题翻译：用于制作带磁带跟踪和边缘的扁平磁头写头的方法
公开(公告)号：US20090128964A1
公开(公告)日：2009-05-21
申请号：US11944125
申请日：2007-11-21
申请人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi , Sue Siyang Zhang
发明人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi , Sue Siyang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T29/49032 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49798
摘要： A method for manufacturing a magnetic write head having a wrap around magnetic shield. The method allows a highly accurate short wavelength such as 193 mm photolithography to be used to accurately define the placement and critical dimension of wrap around magnetic shield. The method includes the formation of a magnetic write pole, top gap, and side gap and the deposition of a RIEable fill layer thereover, and CMP to planarization. A 193 nm photolithography and ion milling is used to form a mask over the RIEable layer and one or more reactive ion etching processes are performed to pattern the RIEable layer through 193 nm photolithography mask. A wrap around shield can then be electroplated into the opening formed in the RIEable layer.
摘要翻译：一种用于制造具有围绕磁屏蔽的磁性写入头的方法。该方法允许使用高精度的短波长（例如193mm光刻）来精确地定义磁屏蔽环绕的放置和临界尺寸。该方法包括形成磁性写入极，顶部间隙和侧面间隙以及在其上沉积RIEable填充层，并将CMP平坦化。使用193nm光刻和离子研磨在RIEable层上形成掩模，并且执行一个或多个反应离子蚀刻工艺以通过193nm光刻掩模对RIEable层进行图案化。然后可以将环绕的护罩电镀到形成在RIEable层中的开口中。

23. 发明授权

US07469467B2 Method of manufacturing a perpendicular write head 失效
标题翻译：制造垂直写头的方法
公开(公告)号：US07469467B2
公开(公告)日：2008-12-30
申请号：US11195532
申请日：2005-08-01
申请人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
发明人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1871 , G11B5/1278 , G11B5/3163 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.
摘要翻译：垂直写头包括主极，其包括形成在层压层工艺上的Durimide /氧化铝硬掩模，以形成主极，而不使用剥离或化学机械抛光工艺，从而避免极的圆角，主极被控制在形状，用于改善斜面的轨道宽度和角度的临界尺寸的控制，以避免不期望的相邻轨道写入。

24. 发明授权

US07441325B2 Perpendicular head with trailing shield and rhodium gap process 失效
标题翻译：垂直头与后盾和铑间隙过程
公开(公告)号：US07441325B2
公开(公告)日：2008-10-28
申请号：US11195222
申请日：2005-08-01
申请人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
发明人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1871 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.
摘要翻译：包括主极和后屏蔽的垂直写头，主极由金刚石碳（DLC）层作为硬掩模和铑（Rh）层作为屏蔽间隙，DLC和Rh层都是CMP停止层，以避免由化学机械平面化（CMP）工艺引起的角落圆角和损伤，通过反应离子蚀刻（RIE）去除DLC层以产生沟槽，后屏蔽层沉积到沟槽中用于自对准。

25. 发明授权

US07287314B2 One step copper damascene CMP process and slurry 失效
标题翻译：一步铜镶嵌CMP工艺和浆料
公开(公告)号：US07287314B2
公开(公告)日：2007-10-30
申请号：US10789777
申请日：2004-02-27
申请人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
IPC分类号： G11B5/17 , H01L21/461
CPC分类号： H01L21/3212 , C23F3/04 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.
摘要翻译：化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

26. 发明申请

US20060043060A1 Method for fabricating thin film magnetic heads using CMP with polishing stop layer 失效
标题翻译：使用具有抛光停止层的CMP制造薄膜磁头的方法
公开(公告)号：US20060043060A1
公开(公告)日：2006-03-02
申请号：US10928002
申请日：2004-08-27
申请人： Hung-Chin Guthrie , Ming Jiang , Hong Zhang
发明人： Hung-Chin Guthrie , Ming Jiang , Hong Zhang
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： B82Y25/00 , G11B5/3163 , G11B5/3169
摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.
摘要翻译：描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。该方法可用于平面化由磁头中的氧化铝包围的金属结构。氧化铝填充物沉积到稍低于金属高度的最终目标高度。在氧化铝上沉积薄的二氧化硅阻挡层。使用所选择的浆料执行CMP以将晶片平坦化到停止层。优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。

27. 发明申请

US20060021973A1 Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces 失效
标题翻译：化学机械纳米研磨方法用于工件超精密加工
公开(公告)号：US20060021973A1
公开(公告)日：2006-02-02
申请号：US10903833
申请日：2004-07-30
申请人： Hung-Chin Guthrie , Ming Jiang
发明人： Hung-Chin Guthrie , Ming Jiang
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , C03C19/00 , G11B5/8404
摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession/trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density head. With a fine lapping plate with a fixed-abrasive nanogrinding process, PTR can be improved to a mean of about 1.0 nm.
摘要翻译：化学机械纳米研磨工艺实现近零极极尖衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷/后缘轮廓变化，以及光滑的表面光洁度，同时最小化多层薄膜和硬质基材满足高密度面的要求。使用具有固定研磨纳米研磨工艺的精细研磨板，PTR可以提高至约1.0nm的平均值。

28. 发明授权

US06984613B1 Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译：用于2.45T薄膜磁头的CoFeNi结构的化学机械抛光清洗溶液
公开(公告)号：US06984613B1
公开(公告)日：2006-01-10
申请号：US10931385
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： C11D17/00
CPC分类号： C11D3/0073 , C11D9/007 , C11D9/30 , C11D11/0047
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

29. 发明申请

US20050259355A1 Perpendicular head with trailing shield and rhodium gap process 失效
标题翻译：垂直头与后盾和铑间隙过程
公开(公告)号：US20050259355A1
公开(公告)日：2005-11-24
申请号：US11195222
申请日：2005-08-02
申请人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
发明人： Yunxiao Gao , Hung-Chin Guthrie , Ming Jiang , Sue Siyang Zhang
IPC分类号： G11B5/127 , G11B5/187
CPC分类号： G11B5/1871 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.
摘要翻译：包括主极和后屏蔽的垂直写头，主极由金刚石碳（DLC）层作为硬掩模和铑（Rh）层作为屏蔽间隙，DLC和Rh层都是CMP停止层，以避免由化学机械平面化（CMP）工艺引起的角落圆角和损伤，通过反应离子蚀刻（RIE）去除DLC层以产生沟槽，后屏蔽层沉积到沟槽中用于自对准。

30. 发明申请

US20050239222A1 Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 失效
标题翻译：基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制
公开(公告)号：US20050239222A1
公开(公告)日：2005-10-27
申请号：US10831592
申请日：2004-04-23
申请人： Hung-Chin Guthrie , Ming Jiang , Yeak-Chong Wong
发明人： Hung-Chin Guthrie , Ming Jiang , Yeak-Chong Wong
IPC分类号： B24B5/00 , B24B37/04 , B24B47/02 , B24B49/03 , G01R31/26 , H01L21/66
CPC分类号： B24B49/03 , B24B37/042
摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.
摘要翻译：在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“背侧压力”的化学机械抛光的参数。在一些实施例中，通过基于中心到边缘轮廓模型的逻辑测试，模型的确定系数R平方和背侧压力的当前值来确定背侧压力。注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。如R平方所示大于预定极限。接下来，将从模型确定的背面压力用于平面化后续晶片。

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