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21. 发明授权

US06350390B1 Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control 有权
标题翻译：用于形成具有增强的临界尺寸（CD）控制的图案层的等离子体蚀刻方法
公开(公告)号：US06350390B1
公开(公告)日：2002-02-26
申请号：US09507808
申请日：2000-02-22
申请人： Chi Kang Liu , Chang Jen Shieh , Pei Hung Chen
发明人： Chi Kang Liu , Chang Jen Shieh , Pei Hung Chen
IPC分类号： G05D500
CPC分类号： G05D5/03 , H01L21/31144 , H01L21/32139
摘要： A feed forward method for forming within a microelectronic fabrication a patterned target layer with controlled critical dimension (CD) first provides a substrate having formed thereover a blanket target layer, in turn having formed thereover a blanket anti-reflective coating (ARC) layer, in turn having formed thereover a paltered photoresist layer. There is then established a correlation which describes an interrelation between the patterned photoresist layer linewidth and a plasma species concentration within a plasma for forming from the blanket anti-reflective coating (ARC) layer a patterned anti-reflective coating (ARC) layer such that a patterned target layer subsequently formed from the blanket target layer is formed with a patterned target layer measured linewidth closer to a patterned target layer target linewidth The linewidth of the patterned photoresist layer is then measured and there is determined a deviation of the patterned photoresist measured linewidth from a patterned photoresist layer target linewidth. The plasma species concentration is then adjusted when etching the blanket anti-reflective coating (ARC) layer to form the patterned anti-reflective coating (ARC) layer such that the patterned target layer may be formed with the patterned target layer measured linewidth closer to a patterned target layer target linewidth.
摘要翻译：用于在微电子制造中形成具有受控临界尺寸（CD）的图案化目标层的前馈方法首先提供了在其上形成有覆盖目标层的基底，其又形成在覆盖层抗反射涂层（ARC）层上，在其上形成有改变的光致抗蚀剂层。然后建立描述图案化光致抗蚀剂层线宽和等离子体中等离子体物质浓度之间的相互关系的相关性，以从毯状抗反射涂层（ARC）层形成图案化抗反射涂层（ARC）层，使得随后由覆盖目标层形成的图案化目标层形成有图案化目标层，测量的线宽更接近图案化目标层目标线宽图案化光致抗蚀剂层的线宽然后被测量，并且确定图案化的光致抗蚀剂测量的线宽与图案化的光刻胶层目标线宽。然后在蚀刻毯子抗反射涂层（ARC）层时调整等离子体物质浓度，以形成图案化抗反射涂层（ARC）层，使得图案化目标层可以形成有图案化目标层，测量的线宽更接近于图案目标层目标线宽。

22. 发明授权

US06265257B1 Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence 有权
标题翻译：制造阻挡层的方法，以保护可编程反熔丝结构免受制造过程中的损坏
公开(公告)号：US06265257B1
公开(公告)日：2001-07-24
申请号：US09409877
申请日：1999-10-01
申请人： Woan Jen Hsu , Chi Kang Liu
发明人： Woan Jen Hsu , Chi Kang Liu
IPC分类号： H01L218238
CPC分类号： H01L21/76849 , H01L21/7684 , H01L21/76877 , H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an antifuse interconnect structure, for a one-time fusible link, to be used with field-programmable gate arrays, has been developed. The process features the use of an amorphous silicon layer, used as the antifuse layer, with the amorphous silicon layer protected by a thin barrier layer, during the patterning procedure. The protected antifuse layer results in a reproducible thickness, and thus reproducible pulsing voltages, needed for rupturing of the antifuse layer. Planarization of an underlying metal plug, via a conductor layer refill procedure, offers a smooth top surface, flush with the top surface of the adjacent interlevel dielectric layer, for the overlying antifuse layer.
摘要翻译：已经开发了用于与现场可编程门阵列一起使用的用于一次性可熔链路的反熔丝互连结构的方法。该工艺的特征在于在图案化步骤期间使用非晶硅层作为反熔丝层，非晶硅层被薄的阻挡层保护。受保护的反熔丝层导致反熔丝层破裂所需的可再现厚度，并因此产生可再现的脉冲电压。通过导体层再填充程序对底层金属插头进行平面化，提供与相邻层间电介质层的顶表面齐平的平滑顶表面，用于覆盖反熔丝层。

23. 发明授权

US6057230A Dry etching procedure and recipe for patterning of thin film copper layers 有权
标题翻译：干蚀刻工艺和薄膜铜层图形化配方
公开(公告)号：US6057230A
公开(公告)日：2000-05-02
申请号：US156051
申请日：1998-09-17
申请人： Chi Kang Liu
发明人： Chi Kang Liu
IPC分类号： H01L21/3213 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/32136 , H01L21/76838
摘要： A method for fabricating a copper, or a copper-titanium nitride-titanium, interconnect structure, using a low temperature RIE patterning procedure, has been developed. The RIE patterning procedure features the use of SiCl.sub.4 and nitrogen, as reactants, with amount of nitrogen supplied, being equal to, or greater than, the SiCl.sub.4 level. The addition of nitrogen, to the etching ambient, results in the formation of a non-cross-linked, by-product, which is easily removed during the patterning procedure, this not interfering with the creation of interconnect structure. Without the addition of nitrogen, a cross-linked, by-product, would be formed, during the low temperature RIE procedure, with the redeposited, cross-linked, by-product, interfering with the patterning of the copper interconnect structure.
摘要翻译：已经开发了使用低温RIE图案化方法制造铜或铜 - 氮化钛 - 钛互连结构的方法。 RIE图案化程序的特征在于使用SiCl 4和氮作为反应物，其供应的氮量等于或大于SiCl 4水平。在蚀刻环境中添加氮导致形成非交联的副产物，其在图案化过程中容易除去，这不妨碍互连结构的产生。在不加氮气的情况下，在低温RIE工艺期间，会形成交联的副产物，其中再沉积的交联副产物妨碍铜互连结构的图案化。

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