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21. 发明授权

US06897299B2 Process for producing erythromycin derivative 失效
标题翻译：红霉素衍生物的制备方法
公开(公告)号：US06897299B2
公开(公告)日：2005-05-24
申请号：US10363318
申请日：2001-08-31
申请人： Hitoshi Shimizu , Kaname Tsuzaki , Mitsuhiro Kurita
发明人： Hitoshi Shimizu , Kaname Tsuzaki , Mitsuhiro Kurita
IPC分类号： A61P1/00 , C07H17/08 , C07H1/00
CPC分类号： A61K31/7048 , C07H17/08
摘要： A method for preparing a fumarate salt of a compound represented by Formula (II): (wherein R1 represents a hydrogen atom or a lower alkyl group, and R2 represents a lower alkyl group), which comprises carbamating a compound represented by Formula (I): (wherein R1 represents a hydrogen atom or a lower alkyl group), removing all carbamate groups from this compound, alkylating the nitrogen atom at the 3′-position of the desosamine ring in the resulting compound to give the compound represented by Formula (II), and converting this compound into a fumarate salt, wherein the compound represented by Formula (I) is carbamated in the presence of a cyclic ether or a carboxylic ester. This method enables efficient preparation of high-quality erythromycin derivatives.
摘要翻译：一种制备由式（II）表示的化合物的富马酸盐的方法：其中R 1表示氢原子或低级烷基，R 2表示低级烷基），其包括将式（I）表示的化合物氨基甲酸酯化：（其中R 1表示氢原子或低级烷基），从该化合物中除去所有氨基甲酸酯基团，将氮烷基化（II）表示的化合物，并将该化合物转化成富马酸盐，其中式（I）所示的化合物在氨基甲酸酯化反应的存在下进行氨基甲酸酯化反应环醚或羧酸酯。该方法能够高效地制备高品质的红霉素衍生物。

22. 发明申请

US20050046854A1 Measuring apparatus and sensor unit for same 有权
标题翻译：测量仪器和传感器单元相同
公开(公告)号：US20050046854A1
公开(公告)日：2005-03-03
申请号：US10932071
申请日：2004-09-02
申请人： Yoshiyuki Kunuki , Hitoshi Shimizu , Toshihito Kimura
发明人： Yoshiyuki Kunuki , Hitoshi Shimizu , Toshihito Kimura
IPC分类号： G01N21/55
CPC分类号： G01N21/553
摘要： A sensor unit includes a dielectric block, a thin film layer and a reference surface. The thin film layer is formed on the upper surface of the dielectric block and the reference surface is coplanar with the upper surface of the dielectric block. The sensor unit is held in a predetermined position. A light beam is caused to enter the dielectric block to impinge upon the interface between the upper surface of the dielectric block and the thin film layer so that total internal reflection conditions are satisfied at the interface. Information on an analyte on the thin film layer is obtained on the basis of the light beam reflected at the interface. Displacement of the interface is measured by measuring displacement of the reference surface and the position of the sensor unit is adjusted according to the displacement of the reference surface.
摘要翻译：传感器单元包括介质块，薄膜层和参考表面。在介质块的上表面上形成薄膜层，并且参考表面与介质块的上表面共面。传感器单元保持在预定位置。导致光束进入介电块以撞击在介质块的上表面和薄膜层之间的界面上，使得在界面处满足全内反射条件。基于在界面处反射的光束获得关于薄膜层上的分析物的信息。通过测量参考表面的位移来测量界面的位移，并且根据参考表面的位移调节传感器单元的位置。

23. 发明授权

US06858863B2 Semiconductor laser device having a high characteristic temperature 有权
标题翻译：具有高特征温度的半导体激光器件
公开(公告)号：US06858863B2
公开(公告)日：2005-02-22
申请号：US10094733
申请日：2002-03-08
申请人： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
发明人： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
IPC分类号： H01S5/343 , H01S5/183 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
摘要： A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.
摘要翻译：半导体激光器件包括形成在GaAs衬底上的谐振腔，所述谐振腔包括具有GaInNA（Sb）阱层和一对阻挡层的量子阱（QW）有源层结构。 QW结构具有等于或高于阱层与阻挡层之间的350毫伏电压（meV）的导带偏移能量（DeltaEc），并且每个阻挡层的拉伸应变等于或小于2.5 ％。

24. 发明授权

US06693269B2 Image reader with DC-coupled integration circuit 失效
标题翻译：具有直流耦合集成电路的图像读取器
公开(公告)号：US06693269B2
公开(公告)日：2004-02-17
申请号：US09922929
申请日：2001-08-07
申请人： Hitoshi Shimizu , Shu Sato , Taizo Akimoto
发明人： Hitoshi Shimizu , Shu Sato , Taizo Akimoto
IPC分类号： H01L2700
CPC分类号： G01T1/208
摘要： A photomultiplier which detects feeble light emitted by the irradiation of excitation light on an image carrier carrying an image related to a living organism has an integration circuit is DC-coupled with a photomultiplier to convert a current signal output from the photomultiplier, to a voltage signal. The voltage signal converted by the integration circuit is logarithmically compressed with a logarithmic conversion circuit. An offset compensation circuit is provided for reducing an offset voltage that could occur because of charge injection in the integral action of the integration circuit.
摘要翻译：检测由携带有机体的图像的图像载体上的激发光照射发出的微弱光的光电倍增管与光电倍增管DC耦合，将从光电倍增管输出的电流信号转换为电压信号。由积分电路转换的电压信号用对数转换电路进行对数压缩。提供了一种偏移补偿电路，用于减少由于集成电路的积分作用中的电荷注入而可能发生的偏移电压。

25. 发明授权

US06396861B1 N-type modulation-doped multi quantum well semiconductor laser device 有权
标题翻译： N型调制掺杂多量子阱半导体激光器件
公开(公告)号：US06396861B1
公开(公告)日：2002-05-28
申请号：US09415390
申请日：1999-10-08
申请人： Hitoshi Shimizu , Kouji Kumada , Akihiko Kasukawa
发明人： Hitoshi Shimizu , Kouji Kumada , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/305 , H01S5/3086 , H01S5/32366 , H01S5/34 , H01S5/3407 , H01S5/343 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： An n-type modulation-doped multi quantum well semiconductor laser device having a multi quantum well structure composed of a hetero-junction structure including well layers and barrier layers, characterized in that each of the well layers and each of the barrier layers are formed of an undoped semiconductor material and a semiconductor material modulation-doped with an n-type dopant, respectively, an anti-reflection film and a high-reflection film are formed on the front and rear facets, respectively, the resonator length is not shorter than 800 &mgr;m, and mirror loss (&agr;m) given by &agr;m=(1/2L)ln{1/(Rf×Rr)}, where L, Rf and Rr are the cavity length (cm), reflectance of the front facet, and reflectance of the rear facet, respectively, is not higher than 15 cm−1. The output of this laser device is higher than that of a conventional undoped MQW semiconductor laser device. The device of the present invention, for use as a 1,480 nm laser device for EDFA excitation, for example, is of great industrial value.
摘要翻译：一种具有由包括阱层和势垒层的异质结结构构成的多量子阱结构的n型调制掺杂多量子阱半导体激光器件，其特征在于阱层和每个势垒层中的每一个由未掺杂的半导体材料和掺杂有n型掺杂剂的半导体材料分别在前面和后面形成防反射膜和高反射膜，谐振器长度不小于800 由于L，Rf和Rr分别为空腔长度（cm），前面的反射率和后面的反射率分别为15cm-1，该激光装置的输出高于常规的未掺杂的MQW半导体激光装置的输出。例如，用作用于EDFA激发的1,480nm激光装置的本发明的装置具有很大的工业价值。

26. 发明授权

US5765060A Photometry device for a camera 失效
标题翻译：相机测光装置
公开(公告)号：US5765060A
公开(公告)日：1998-06-09
申请号：US564874
申请日：1995-11-28
申请人： Hitoshi Shimizu
发明人： Hitoshi Shimizu
IPC分类号： G01J1/02 , G03B7/099 , H04N5/225
CPC分类号： G03B7/099
摘要： A light redirecting member moves in concert with an aperture mechanism between a first position to redirect light to a metering sensor and a second position to allow light to pass to an imaging sensor. A motor drives the aperture mechanism to predetermined positions, swinging the associated light redirecting member in and out of an optical path from an imaging optical system to the imaging sensor.
摘要翻译：光重定向构件与第一位置之间的光圈机构一致移动，以将光重定向到测光传感器，并且第二位置允许光通过成像传感器。电动机将光圈机构驱动到预定位置，使相关联的光重定向构件从入射光学系统到成像传感器的光路中移出。

27. 发明授权

US5592250A Driving mechanism for a photograhing optical system 失效
标题翻译：照相光学系统的驱动机制
公开(公告)号：US5592250A
公开(公告)日：1997-01-07
申请号：US491764
申请日：1995-06-19
申请人： Hitoshi Shimizu
发明人： Hitoshi Shimizu
IPC分类号： G02B7/04 , G02B7/08 , G02B7/09 , H04N5/232 , G03B1/18
CPC分类号： G02B7/08
摘要： A photographing device includes a driving mechanism provided in a photographing optical system, a driving source located outside the photographing optical system, a rotational shaft located parallel with an optical axis of the photographing optical system, and in the photographing optical system, and connecting the driving source and the driving mechanism, an electro-magnetic clutch mechanism located around the optical axis of the photographing optical system, and arranged to connect/disconnect the driving mechanism and the driving source.
摘要翻译：拍摄装置包括设置在拍摄光学系统中的驱动机构，位于拍摄光学系统外部的驱动源，与拍摄光学系统的光轴平行的旋转轴，以及拍摄光学系统，并且连接驱动源和驱动机构，位于拍摄光学系统的光轴周围的电磁离合器机构，并且被布置成连接/断开驱动机构和驱动源。

28. 发明授权

US5378639A Method for manufacturing a thin-film photovoltaic conversion device 失效
标题翻译：薄膜光伏转换装置的制造方法
公开(公告)号：US5378639A
公开(公告)日：1995-01-03
申请号：US234927
申请日：1994-04-28
申请人： Toshiaki Sasaki , Hitoshi Shimizu
发明人： Toshiaki Sasaki , Hitoshi Shimizu
IPC分类号： C23C16/54 , H01L31/0392 , H01L31/076 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , C23C16/545 , H01L31/03921 , H01L31/206 , Y02E10/548 , Y02P70/521 , Y10S438/907
摘要： The present invention relates to a method and an apparatus for forming photovoltaic conversion layers and electrode layers with increased efficiency by forming thin film layers under optimal conditions on a belt-like flexible substrate which is transported by means two interacting rollers. Films are formed on the substrate, which remains stationary during film-formation, in film-forming chambers maintained airtight by walls pressed against the substrate via sealing materials. Furthermore, film-forming chamber walls and a ground electrode contacting one side of the substrate are retracted from the substrate surface to facilitate movement of the substrate to a next film-forming position without being damaged. The apparatus of the present invention allows not only the film-forming time and conditions, as well as the size, of each film-forming chamber to be controlled independently, but it also prevents intermingling of gases present in different film-forming chambers. In addition, by incorporating a film-forming chamber that can facilitate formation of multi-layered films, or by providing movable film-forming chambers which may be aligned with the substrate, the required time and the size of the apparatus for a device with a multi-layer structure can be shortened.
摘要翻译：本发明涉及一种用于通过在最佳条件下在通过两个相互作用的辊输送的带状柔性基底上形成薄膜层来提高效率的方法和装置。在基片上形成薄膜，在薄膜形成过程中保持静止，薄膜形成室通过经由密封材料压靠基片的壁保持气密。此外，与基板的一侧接触的成膜室壁和接地电极从基板表面缩回以便于将基板移动到下一个成膜位置而不被损坏。本发明的装置不仅可以独立地控制每个成膜室的成膜时间和尺寸以及尺寸，而且还可以防止存在于不同成膜室中的气体的混合。此外，通过结合可以促进多层膜的形成的成膜室，或者通过设置可与基板对准的可移动成膜室，所需的时间和装置的尺寸等于具有可以缩短多层结构。

29. 发明授权

US5318908A Method for cultivation of nitrile hydratase-producing pseudomonas 失效
标题翻译：培养产腈水合酶的假单胞菌的方法
公开(公告)号：US5318908A
公开(公告)日：1994-06-07
申请号：US735720
申请日：1991-07-26
申请人： Susumu Seki , Masaru Suto , Koichiro Ryuno , Hitoshi Shimizu , Takanori Fujimoto
发明人： Susumu Seki , Masaru Suto , Koichiro Ryuno , Hitoshi Shimizu , Takanori Fujimoto
IPC分类号： C12P13/02 , C12N1/20 , C12N9/78 , C12N9/88 , C12R1/38
CPC分类号： C12R1/38 , C12N9/78 , Y10S435/874
摘要： A method for the cultivation of bacteria of the genus Pseudomonas capable of producing nitrile hydratase is disclosed. The method involves adding a water soluble copper compound in an amount of about 0.5 to 5.0 mg/l as calculated in terms of copper to a culture medium in the preparation of cells of the bacteria under shear force supplied by stirring blades, wherein the circumferential speed of the edges of the stirring blades exceeds about 2.5 m/sec. The water soluble copper compound is preferrably copper chloride, copper sulfate, copper nitrate, copper acetate, copper tartrate, copper (II) acetylacetonate or copper (II) ETDA.
摘要翻译：公开了一种培养能够产生腈水合酶的假单胞菌属细菌的方法。该方法包括在由搅拌叶片提供的剪切力下，在制备细菌细胞的过程中向培养基中加入以铜计算的约0.5-5.0mg / l的水溶性铜化合物，其中圆周速度的搅拌叶片的边缘超过约2.5m / sec。水溶性铜化合物优选为氯化铜，硫酸铜，硝酸铜，乙酸铜，酒石酸铜，乙酰丙酮铜（II）或铜（II）ETDA。

30. 发明授权

US5175844A Execution rate controlling device 失效
标题翻译：执行率控制装置
公开(公告)号：US5175844A
公开(公告)日：1992-12-29
申请号：US595816
申请日：1990-10-11
申请人： Yasushi Fukuda , Hitoshi Shimizu
发明人： Yasushi Fukuda , Hitoshi Shimizu
IPC分类号： G06F9/30 , G06F1/04 , G06F9/38
CPC分类号： G06F9/3869
摘要： In order to control an execution rate of a central processing unit which carries out a processing operation in synchronism with a clock signal supplied from a clock oscillator, an execution rate controlling device periodically supplies a hold demand signal to suspend the processing operation during reception of the hold demand signal and comprises a data holding unit for holding held data representative of the execution rate. A generating unit generates the hold demand signal in response to the held data and the clock signal so that the hold demand signal may last for a duration which is inversely proportional to the execution rate. The generating unit comprises a counter unit for counting a count in synchronism with the clock signal up to a maximum value defining a period of periodic supply of the hold demand signal, and produces counted data indicative of the count and a carry signal initializing the count to zero when the count reaches the maximum value. A comparing unit compares the held data with the counted data and produces a coincidence signal when the held data and the counted data coincide with each other. A supplying unit supplies the hold demand signal to the central processing unit from a time instant of reception of the coincidence signal to a time instant of reception of a carry signal.
摘要翻译：为了控制与从时钟振荡器提供的时钟信号同步地执行处理操作的中央处理单元的执行速率，执行速率控制装置周期性地提供保持请求信号以暂停处理操作保持请求信号，并且包括用于保存表示执行率的保持数据的数据保持单元。生成单元响应于保持的数据和时钟信号产生保持请求信号，使得保持请求信号可持续与执行率成反比的持续时间。生成单元包括计数器单元，用于与时钟信号同步计数，直到定义保持请求信号的周期性供给周期的最大值，并产生表示计数的计数数据和将计数初始化的进位信号当计数达到最大值时为零。比较单元将保持的数据与计数的数据进行比较，并且当保持的数据和计数的数据彼此一致时产生一致信号。供应单元从接收到符合信号的时刻到进位信号的接收时刻向中央处理单元提供保持请求信号。

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