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1. 发明授权

US09300114B2 Laser device, method of manufacturing the same, laser device array, light source and light module 有权
标题翻译：激光装置及其制造方法，激光装置阵列，光源和光模块
公开(公告)号：US09300114B2
公开(公告)日：2016-03-29
申请号：US13435061
申请日：2012-03-30
申请人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
发明人： Hitoshi Shimizu , Toshihito Suzuki , Yasumasa Kawakita , Keishi Takaki
IPC分类号： G02B6/12 , H01S5/183 , B82Y20/00 , H01S5/00 , H01S5/343 , H01S5/42
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0021 , H01S5/18333 , H01S5/18358 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.
摘要翻译：提供了一种激光器件，其包括衬底，有源层和电流限制层。电流限制层包括从平行于衬底表面的平行平面中的电流限制层边缘形成的氧化物层沿着平行平面向电流限制层的中心延伸，并且不具有所述边缘和形成在所述中心附近的尖端部分之间的拐点或在所述边缘和所述尖端部分之间形成有多个拐点。

2. 发明授权

US08488644B2 Semiconductor laser element and manufacturing method thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08488644B2
公开(公告)日：2013-07-16
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

3. 发明授权

US08327804B2 Measurement object holder, living body holder, and optical measurement instrument 有权
标题翻译：测量对象支架，活体支架和光学测量仪器
公开(公告)号：US08327804B2
公开(公告)日：2012-12-11
申请号：US13146921
申请日：2010-02-01
申请人： Yukio Yamada , Hitoshi Shimizu , Takeshi Kimura
发明人： Yukio Yamada , Hitoshi Shimizu , Takeshi Kimura
IPC分类号： A01K29/00
CPC分类号： G01N21/01 , A01K1/0613 , A46D3/00 , A61B5/0071 , A61B5/0073 , A61B2503/40 , A61B2560/06 , G01N21/4795 , G01N21/6428 , G01N21/6456 , G01N21/65 , G01N2021/1787 , G01N2021/651
摘要： A measurement object holder that holds a measurement object in an optical measurement instrument, wherein the optical measurement instrument takes, as the measurement object, a living body in which isotropic scattering of light occurs inside and receives light emitted from the measurement object is disclosed. The measurement object holder includes a block that is formed in a predetermined outer shape by a material having optical properties in which the isotropic scattering of light occurs inside; and a cavity portion that is formed inside the block, that has an inner shape following the outer shape of the measurement object and in which the measurement object is accommodated.
摘要翻译：本发明公开了一种将测量对象保持在光学测量仪器中的测量对象保持器，其中所述光学测量仪器作为所述测量对象，将生物体作为测量对象的内部发生光的各向同性散射并接收从测量对象发射的光。测量对象保持器包括通过具有光学特性的材料形成为预定的外部形状的块，其中发生光的各向同性散射; 以及形成在所述块内的空腔部，所述空腔部具有与所述测量对象的外部形状相邻并且容纳所述测量对象的内部形状。

4. 发明授权

US08300671B2 Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：US08300671B2
公开(公告)日：2012-10-30
申请号：US13176921
申请日：2011-07-06
申请人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
发明人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/02208 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18322 , H01S5/18369 , H01S2304/04
摘要： A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要翻译：表面发射激光器包括形成在III-V族化合物衬底上的空腔区域，该腔体区域包括有源层和具有氧化铝化合物的电流限制层，并限制电流通过该电流通路流入有源层，形成在基板上的上DBR镜和下DBR镜，夹着腔区，以及设置成接触电流限制层的渐变组成层，其具有与当前限制层距离单调减小的铝组成比增加渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层，并且其铝组成比的变化率大于第一区域的变化率。梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。

5. 发明申请

US20120053413A1 FLUORESCENT ENDOSCOPY APPARATUS 审中-公开
标题翻译：荧光内窥镜装置
公开(公告)号：US20120053413A1
公开(公告)日：2012-03-01
申请号：US13216181
申请日：2011-08-23
申请人： Koji YOSHIDA , Hitoshi Shimizu , Masayuki Iwasaka
发明人： Koji YOSHIDA , Hitoshi Shimizu , Masayuki Iwasaka
IPC分类号： A61B1/06
CPC分类号： A61B1/043 , A61B1/00009 , A61B1/063 , A61B1/0638 , A61B1/0653
摘要： A fluorescent endoscopy apparatus includes an endoscope insertion unit that is inserted into a body cavity and that guides excitation light to illuminate a region to be observed, and an imaging unit that images a fluorescent image by receiving fluorescence that has been output from the region to be observed by illumination with the excitation light and guided by the endoscope insertion unit. Further, the fluorescent endoscopy apparatus includes a facial information detection unit that detects facial information about a person in an imaging image that has been imaged by the imaging unit by receiving light guided by the endoscope insertion unit, and an interlock unit that prohibits illumination with the excitation light when the facial information detection unit has detected the facial information.
摘要翻译：荧光内窥镜检查装置包括：内窥镜插入单元，其插入到体腔内并且引导激发光以照射要观察的区域;以及摄像单元，其通过接收从所述区域输出的荧光来对荧光图像进行成像通过用激发光照射并由内窥镜插入单元引导来观察。此外，荧光内窥镜检查装置包括面部信息检测单元，其通过接收由内窥镜插入单元引导的光来检测由成像单元成像的成像图像中的人的面部信息，以及互锁单元，其禁止用当面部信息检测单元检测到面部信息时，激发光。

6. 发明申请

US20110261852A1 SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110261852A1
公开(公告)日：2011-10-27
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/10 , H01L33/20 , B82Y20/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

7. 发明申请

US20110237895A1 IMAGE CAPTURING METHOD AND APPARATUS 审中-公开
标题翻译：图像捕获方法和装置
公开(公告)号：US20110237895A1
公开(公告)日：2011-09-29
申请号：US12979272
申请日：2010-12-27
申请人： Koji Yoshida , Hitoshi Shimizu , Kazuhiko Katakura , Takayuki Iida
发明人： Koji Yoshida , Hitoshi Shimizu , Kazuhiko Katakura , Takayuki Iida
IPC分类号： A61B1/06
CPC分类号： A61B1/0638 , A61B1/00009 , A61B1/0005 , A61B1/00186 , A61B1/043 , A61B1/063 , A61B1/0684 , G06T7/11 , G06T7/136
摘要： An image capturing apparatus which includes a light projection unit for projecting light of a different wavelength range emitted from each of a plurality of light sources onto an observation area administered with a fluorescent agent, an imaging unit for receiving light emitted from the observation area irradiated with each light to capture an image corresponding to each light, and a light intensity ratio change unit for changing the light intensity ratio of light emitted from each of the light sources.
摘要翻译：一种图像捕获装置，包括：用于将从多个光源中的每一个发射的不同波长范围的光投射到施加有荧光剂的观察区域的光投射单元;用于接收从被照射的观察区域发射的光的成像单元每个光捕获与每个光相对应的图像，以及光强度比改变单元，用于改变从每个光源发射的光的光强度比。

8. 发明申请

US20110230719A1 IMAGE CAPTURING METHOD AND APPARATUS 审中-公开
标题翻译：图像捕获方法和装置
公开(公告)号：US20110230719A1
公开(公告)日：2011-09-22
申请号：US12986007
申请日：2011-01-06
申请人： Kazuhiko Katakura , Hitoshi Shimizu , Shinichi Shimotsu
发明人： Kazuhiko Katakura , Hitoshi Shimizu , Shinichi Shimotsu
IPC分类号： A61B1/12
CPC分类号： A61B1/0638 , A61B1/00009 , A61B1/043 , A61B1/063 , A61B1/0653 , A61B1/126 , A61B1/313
摘要： In an image capturing apparatus in which irradiation light emitted from a light source is projected onto an observation area through an irradiation window, reflection light of the irradiation light incident on the irradiation window and reflected from the window is detected and a liquid is discharged onto the irradiation window according to a result of the detection.
摘要翻译：在从光源发射的照射光通过照射窗投射到观察区域的摄像装置中，检测入射在照射窗口并从窗口反射的照射光的反射光，并将液体排出到照射窗口根据检测结果。

9. 发明授权

US07830625B2 Lens positioning jig, method of attaching lens barrel and lens device 失效
标题翻译：镜头定位夹具，安装镜筒和镜头装置的方法
公开(公告)号：US07830625B2
公开(公告)日：2010-11-09
申请号：US12116098
申请日：2008-05-06
申请人： Sayaka Iba , Hitoshi Shimizu
发明人： Sayaka Iba , Hitoshi Shimizu
IPC分类号： G02B7/02
CPC分类号： G02B7/023 , G03B21/006 , H04N9/3102
摘要： It is provided that a lens positioning jig, a method of attaching lens barrel, and a lens device. A lens holding portion is inserted through a barrel insertion hole, and then a housing holding portion allows a barrel attachment portion to be thereby positioned and held in a lens housing. When an air pump is operated, a lens holding portion sucks and holds a convergent lens held in a second lens barrel and then positioned with respect to the barrel attachment portion. In addition, the second lens barrel is held in the lens housing so that the second flange does not come in contact with barrel attachment groove. Subsequently, an adhesive is filled into a gap formed between the second flange and the barrel attachment groove to thereby fix the second lens barrel thereto.
摘要翻译：提供了一种透镜定位夹具，一种安装镜筒的方法和一种透镜装置。透镜保持部通过镜筒插入孔插入，然后壳体保持部允许镜筒安装部被定位并保持在镜片壳体中。当操作空气泵时，透镜保持部吸住并保持保持在第二透镜镜筒中的会聚透镜，然后相对于镜筒安装部定位。此外，第二透镜镜筒保持在透镜壳体中，使得第二凸缘不与镜筒附接槽接触。随后，将粘合剂填充到形成在第二凸缘和筒附接凹槽之间的间隙中，从而将第二透镜筒固定到其上。

10. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

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