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    • 21. 发明授权
    • Photoelectric-conversion apparatus and image-pickup system
    • 光电转换装置和摄像系统
    • US07411170B2
    • 2008-08-12
    • US11835009
    • 2007-08-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • H01L27/00H01L31/062
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
    • 24. 发明授权
    • Visible and infrared imaging apparatus with movement detecting circuits
for affecting freeze and noise reducing operations
    • 具有运动检测电路的可见和红外成像装置,用于影响冷冻和降噪操作
    • US5667474A
    • 1997-09-16
    • US399461
    • 1995-03-07
    • Shigeru Nishimura
    • Shigeru Nishimura
    • A61B1/04H04N5/21H04N5/225H04N5/33A61B1/045
    • H04N5/33H04N2005/2255H04N5/21Y10S600/921
    • A field sequential image pickup apparatus which prevents misregistration in color pictures with respect to a visible freeze image and improves the S/N of an infrared image with respect to a movement of an object of observation. R (red), G (green), B (blue) and infrared light beams are sequentially projected from a color disk provided with filters for visible light and a filter for infrared light, and a CCD sequentially generates R, G, B picture signals and infrared picture signals. A movement detection circuit detects a movement in the object from the picture signals. When there is a movement, a freeze operation is inhibited with respect to a visible image, while executing it when there is no movement. With respect to an infrared image, a noise reducing operation is suppressed when there is a movement, while fully executing it when there is no movement.
    • 一种场序图像拾取装置,其防止相对于可见冻结图像的彩色图像中的对准,并且改善相对于观察对象的移动的红外图像的S / N。 从设置有可见光用滤光片的彩色光盘和红外光用滤光片依次投射R(红色),G(绿色),B(蓝色)和红外光束,CCD依次生成R,G,B图像信号 和红外图像信号。 移动检测电路根据图像信号检测物体中的移动。 当存在运动时,当没有运动时执行冻结操作,相对于可见图像被禁止。 对于红外图像,当存在移动时,抑制噪声降低操作,而在没有移动时完全执行噪声降低操作。
    • 25. 发明授权
    • Process for preparing semiconductor device using a tunnel oxidized layer
    • 使用隧道氧化层制备半导体器件的方法
    • US5476799A
    • 1995-12-19
    • US67788
    • 1993-05-27
    • Masaru SakamotoMasakazu MorishitaShigeru Nishimura
    • Masaru SakamotoMasakazu MorishitaShigeru Nishimura
    • H01L21/20H01L21/225H01L21/285H01L21/3215H01L21/22
    • H01L21/32155H01L21/2022H01L21/2257H01L21/28525Y10S148/123Y10S438/923
    • A process for preparing a semiconductor device forms an insulating thin film capable of tunnelling phenomenon of carriers on a semiconductor substrate and forms a polycrystalline semiconductor layer on the thin film. An impurity is injected to the surface of the polycrystalline semiconductor layer, the diffusion coefficient to the thin film being smaller than that to the polycrystalline semiconductor layer. The process effects a first heat treatment at a temperature of 800.degree. C. or less to diffuse the impurity injected into the polycrystalline semiconductor layer in the polycrystalline semiconductor layer, thereby forming a uniform or substantially uniform impurity containing region at least at the thin film side of the polycrystalline semiconductor layer, and, effects a second heat treatment the temperature of which is 950.degree. C. or less and higher than the temperature of the first heat treatment to diffuse the impurity present in the polycrystalline semiconductor layer into the semiconductor substrate through the thin film, thereby forming a diffused layer.
    • 制备半导体器件的方法形成能够在半导体衬底上具有载流子隧道现象的绝缘薄膜,并在薄膜上形成多晶半导体层。 向多晶半导体层的表面注入杂质,对薄膜的扩散系数小于多晶半导体层的扩散系数。 该处理在800℃以下的温度下进行第一次热处理,以使在多晶半导体层中注入多晶半导体层的杂质扩散,至少在薄膜侧形成均匀或基本上均匀的含杂质区域 的多晶半导体层,并且进行第二热处理,其温度为950℃以下且高于第一热处理的温度,以将存在于多晶半导体层中的杂质扩散到半导体衬底中,通过 薄膜,从而形成扩散层。
    • 26. 发明授权
    • Photoelectric-conversion apparatus and image-pickup system
    • 光电转换装置和摄像系统
    • US07592578B2
    • 2009-09-22
    • US12168245
    • 2008-07-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • H01L27/00H01L31/062
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
    • 27. 发明授权
    • Vision regeneration assisting apparatus
    • 视力再生辅助装置
    • US07308315B2
    • 2007-12-11
    • US10467916
    • 2002-02-14
    • Jun OhtaShigeru NishimuraKohtaro IdegamiKeiichiro Kagawa
    • Jun OhtaShigeru NishimuraKohtaro IdegamiKeiichiro Kagawa
    • A61N1/00
    • A61F9/0017A61F9/08
    • It is an object of the invention to provide a vision regeneration assisting apparatus capable of assisting in vision regeneration without making a system structure complicated.In the invention, a vision regeneration assisting apparatus for regenerating a vision of a patient going blind by a disease of a retina includes a photosensor embedded in the retina of an eye of the patient and converting an optical signal into an electric signal, photographing means for photographing an object to be recognized by the patient, image processing means for carrying out an image processing to extract a feature with respect to an image of the object obtained by the photographing means, pulse light forming means for forming a luminous flux into a pulse light to induce a vision, and irradiating means provided before the eye of the patient and applying the pulse light toward the photosensor so as to be formed as an image processed by the image processing means.
    • 本发明的目的是提供一种能够辅助视觉再现而不使系统结构复杂化的视觉再生辅助装置。 在本发明中,视网膜再生辅助装置,用于再生由视网膜疾病失明的患者的视力,包括嵌入在患者眼睛的视网膜中的光传感器,并将光信号转换为电信号,拍摄装置 拍摄要被患者识别的对象,图像处理装置,用于执行图像处理以提取关于由拍摄装置获得的对象的图像的特征;脉冲光形成装置,用于将光束形成为脉冲光 以引起视力,以及设置在患者眼睛之前的照射装置,并将脉冲光施加到光传感器,以形成为由图像处理装置处理的图像。