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21. 发明授权

US06836073B2 Simultaneous discharge apparatus 失效
标题翻译：同时放电装置
公开(公告)号：US06836073B2
公开(公告)日：2004-12-28
申请号：US10452261
申请日：2003-06-02
申请人： Atsushi Matsushita
发明人： Atsushi Matsushita
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： A simultaneous discharge apparatus comprises a plurality of plasma treatment apparatuses and a single high-frequency power supply, in which the plurality of plasma treatment apparatuses are discharged simultaneously using the single high-frequency power supply, the plurality of plasma treatment apparatuses being a plasma treatment apparatus in which a coil electrode is used as an electrode for generating plasma and inductive coupled plasma is mainly generated, wherein a power supply line from the high-frequency power supply is branched into each plasma treatment apparatus through a branch section, and fixed capacitors are provided on the downstream side of the branch section and between the branch section and each plasma treatment apparatus, respectively. It is preferable to adjust the impedance of the fixed capacitor to be 2.3-2.7 times that of the coil electrode which is located on the same downstream side. With this, it is possible to conduct a treatment such as an etching process or an ashing process to a coating film formed on the surface of a material to be treated in each chamber at the same rate.
摘要翻译：同时放电装置包括多个等离子体处理装置和单个高频电源，其中多个等离子体处理装置使用单个高频电源同时放电，多个等离子体处理装置是等离子体处理主要生成线圈电极用作产生等离子体和电感耦合等离子体的电极的装置，其中来自高频电源的电源线通过分支部分分支到每个等离子体处理装置中，固定电容器分别设置在分支部的下游侧，分支部与各等离子体处理装置之间。优选将固定电容器的阻抗调整为位于同一下游侧的线圈电极的阻抗的2.3〜2.7倍。由此，可以以相同的速率对形成在每个室中待处理材料的表面上的涂膜进行诸如蚀刻处理或灰化处理的处理。

22. 发明授权

US06758222B2 Processing method for substrate 有权
标题翻译：基板加工方法
公开(公告)号：US06758222B2
公开(公告)日：2004-07-06
申请号：US10073429
申请日：2002-02-11
申请人： Kazuto Obuchi , Kaoru Mizutani , Atsushi Matsushita
发明人： Kazuto Obuchi , Kaoru Mizutani , Atsushi Matsushita
IPC分类号： C23F500
CPC分类号： H01J37/32743 , C03C15/00 , C03C23/006
摘要： A method of processing a substrate resists unwanted generation of plasma within a waiting chamber of a processing apparatus. The waiting chamber and a processing chamber are depressurized, and an untreated substrate is placed into the processing chamber, by raising a mounting table. A lower opening of the processing chamber is air-tightly closed by an edge portion of the mounting table. Thereafter, gas is introduced into the waiting chamber to increase the pressure therein, and in parallel with this, reactive gas is introduced into the processing chamber, but at a much lower pressure than that of the waiting chamber. Under this condition, high frequency power is applied to electrodes of the processing chamber to generate plasma therein. The likelihood of unwanted plasma generation in the waiting chamber is significantly reduced by the higher pressure therein, relative to the processing chamber.
摘要翻译：处理衬底的方法抵抗处理装置的等待室内的不期望的等离子体产生。等待室和处理室被减压，并且未处理的基板通过升高安装台而被放置到处理室中。处理室的下部开口由安装台的边缘部分气密地封闭。此后，气体被引入到等候室中以增加其中的压力，并且与此并行，反应性气体被引入处理室，但压力低于等待室的压力。在这种情况下，高频功率被施加到处理室的电极以在其中产生等离子体。相对于处理室，等待室中不希望的等离子体产生的可能性通过其中较高的压力显着降低。

23. 发明授权

US09048311B2 Laminate and method for separating the same 有权
标题翻译：层压板及其分离方法
公开(公告)号：US09048311B2
公开(公告)日：2015-06-02
申请号：US13880802
申请日：2011-08-25
申请人： Yoshihiro Inao , Yasushi Fujii , Atsushi Matsushita , Koki Tamura , Atsushi Kubo
发明人： Yoshihiro Inao , Yasushi Fujii , Atsushi Matsushita , Koki Tamura , Atsushi Kubo
IPC分类号： B32B38/10 , B32B17/06 , H01L21/78 , H01L21/683 , H01L23/00 , B32B7/06 , C03C17/34
CPC分类号： H01L21/7813 , B32B7/06 , C03C17/3452 , H01L21/6835 , H01L23/562 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/0002 , Y10T156/1158 , H01L2924/00
摘要： A laminate including a supporting member which is light transmissive; a supported substrate supported by the supporting member; an adhesive layer provided on a surface of the supported substrate which surface faces toward the supporting member; and a release layer which is made of a fluorocarbon and is provided between the supporting member and the supported substrate, the release layer having a property that changes when it absorbs light coming through the supporting member.
摘要翻译：一种层压体，其包括透光性的支撑构件; 由支撑构件支撑的支撑基板; 所述粘合剂层设置在所述被支撑基板的表面朝向所述支撑部件的表面上; 以及由碳氟化合物制成并且设置在所述支撑构件和所述被支撑基板之间的剥离层，所述剥离层具有当吸收通过所述支撑构件的光时变化的性质。

24. 发明申请

US20140141253A1 METHOD OF MANUFACTURING MULTILAYER BODY, METHOD OF PROCESSING SUBSTRATE, AND MULTILAYER BODY 审中-公开
标题翻译：制造多层体的方法，加工底物的方法和多层体
公开(公告)号：US20140141253A1
公开(公告)日：2014-05-22
申请号：US14127315
申请日：2012-05-31
申请人： Yasushi Fujii , Tatsuhiro Mitake , Atsushi Matsushita
发明人： Yasushi Fujii , Tatsuhiro Mitake , Atsushi Matsushita
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/26 , C23C16/505 , H01L21/0212 , H01L21/02274 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/68331 , H01L2221/6834 , H01L2221/68381 , Y10T428/31504
摘要： A method for forming a release layer which lies between a substrate and a supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, by carrying out plasma CVD with a high-frequency power that is set so as to be higher than a power at which a mode jump occurs.
摘要翻译：一种形成剥离层的方法，该剥离层位于基板和支撑构件之间，并且具有当剥离层吸收通过支撑构件的光时改变的性质，通过以设定为高的功率进行等离子体CVD 高于发生模式跳转的功率。

25. 发明授权

US06649534B2 Methods for processing a coating film and for manufacturing a semiconductor element 有权
标题翻译：用于处理涂膜和制造半导体元件的方法
公开(公告)号：US06649534B2
公开(公告)日：2003-11-18
申请号：US10216997
申请日：2002-08-12
申请人： Yasushi Fujii , Atsushi Matsushita
发明人： Yasushi Fujii , Atsushi Matsushita
IPC分类号： H01L2131
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/02282 , H01L21/31058 , H01L21/31138 , H01L21/3121 , H01L21/76802
摘要： According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resist pattern, and processing the silica group coating film with plasma induced from a substantially inactive gas such as helium gas or the like. In this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant can be maintained.
摘要翻译：根据本发明，提供一种涂膜的处理方法，包括以下步骤：在基材上形成具有低介电常数的二氧化硅基涂膜，通过抗蚀剂图案蚀刻二氧化硅基涂膜，并处理由基本上惰性的气体如氦气等引起的具有等离子体的二氧化硅组涂膜。在该方法中，当作为后续工艺对抗蚀剂图案进行灰化处理时，二氧化硅基涂膜不被损坏，并且可以保持低介电常数。

26. 发明授权

US06509279B2 Methods for processing a coating film and for manufacturing a semiconductor element 失效
公开(公告)号：US06509279B2
公开(公告)日：2003-01-21
申请号：US09912119
申请日：2001-07-24
申请人： Yasushi Fujii , Atsushi Matsushita
发明人： Yasushi Fujii , Atsushi Matsushita
IPC分类号： H01L2131
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/02282 , H01L21/31058 , H01L21/31138 , H01L21/3121 , H01L21/76802
摘要： According to the present invention, there is provided a method for processing a coating film comprising the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a resist pattern, processing the silica group coating film with plasma induced from inactive gas such as helium gas or the like. In processing according to this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant of the coating film can be maintained.

27. 发明授权

US5435880A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5435880A
公开(公告)日：1995-07-25
申请号：US137292
申请日：1993-10-14
申请人： Mitsuaki Minato , Atsushi Matsushita , Shinichi Omori , Jun Kanamori
发明人： Mitsuaki Minato , Atsushi Matsushita , Shinichi Omori , Jun Kanamori
IPC分类号： C23F4/00 , C23C16/507 , H01J37/32 , H01L21/302 , C23F1/02
CPC分类号： H01J37/32091 , C23C16/507 , H01J37/32357
摘要： A plasma processing apparatus for processing a workpiece such as a semiconductor wafer in a plasma includes a downstream- or coaxial-type chamber for housing the workpiece. A first sheet-like electrode is mounted on an outer circumferential surface of the chamber and electrically connected to a high-frequency power supply, and a second sheet-like electrode is mounted on the outer circumferential surface of the chamber and connected to ground. The first and second sheet-like electrodes are spaced in confronting relationship from each other circumferentially of the chamber across or along the axis thereof. The first and second sheet-like electrodes have respective axial or circumferential arrays of successive teeth, such as rectangular comb teeth, extending circumferentially or axially of the chamber and respective axial or circumferential arrays of successive recesses which complementarily receive the teeth, respectively, in an interdigitating pattern. The teeth have respective edges spaced from the corresponding edges of the recesses by a substantially uniform gap.
摘要翻译：用于处理诸如等离子体中的半导体晶片的工件的等离子体处理装置包括用于容纳工件的下游或同轴型室。第一片状电极安装在腔室的外周面上并电连接到高频电源，第二片状电极安装在腔室的外圆周表面并连接到地面。第一和第二片状电极在腔室的圆周方向上彼此间隔开或沿其轴线相互间隔开。第一和第二片状电极具有相应的轴向或周向排列的连续的齿，例如矩形梳齿，沿圆周方向或轴向延伸，以及相应的轴向或周向阵列的连续凹槽，分别互补地接收牙齿交叉模式齿具有与凹部的相应边缘间隔开大致均匀间隙的相应边缘。

28. 发明授权

US5220338A Antenna Element 失效
标题翻译：天线元素
公开(公告)号：US5220338A
公开(公告)日：1993-06-15
申请号：US778823
申请日：1991-12-19
申请人： Atsushi Matsushita
发明人： Atsushi Matsushita
IPC分类号： H01F1/14 , H01Q1/36 , H01Q7/08
CPC分类号： H01Q7/08
摘要： An antenna element comprising a hollow pipe made of a magnetic material said hollow pipe having an axial bore extending therethrough; a solid or hollow metal bar made of at least one metal selected from the group consisting of aluminum, titanium, copper and alloys thereof, said metal bar being inserted into the axial bore; an insulating material existing between the hollow pipe and the metal bar; and an electrically conductive wire being wound on at least a part of an outer surface of the hollow pipe, said electrically conductive wire having been coated with an insulating material.
摘要翻译： PCT No.PCT / JP91 / 00543 Sec。 371 1991年12月19日第 102（e）1991年12月19日PCT PCT 1991年4月23日PCT公布。公开号WO91 / 17584 日本1991年11月14日。一种天线元件，包括由磁性材料制成的中空管，所述中空管具有延伸穿过其中的轴向孔; 由选自铝，钛，铜及其合金中的至少一种金属制成的固体或中空金属棒，所述金属棒插入轴向孔中; 存在于中空管和金属棒之间的绝缘材料; 并且导电线缠绕在中空管的外表面的至少一部分上，所述导电线已经被绝缘材料涂覆。

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