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21. 发明申请

US20070047800A1 Method and apparatus for inspecting defects of circuit patterns 有权
标题翻译：检查电路图形缺陷的方法和装置
公开(公告)号：US20070047800A1
公开(公告)日：2007-03-01
申请号：US11488734
申请日：2006-07-19
申请人： Takashi Hiroi , Naoki Hosoya , Hirohito Okuda , Koichi Hayakawa , Fumihiko Fukunaga
发明人： Takashi Hiroi , Naoki Hosoya , Hirohito Okuda , Koichi Hayakawa , Fumihiko Fukunaga
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： The present invention relates to a defect inspection apparatus for inspecting defects in patterns formed on a semiconductor device, on the GUI of which for the confirmation of the inspection results an area is provided for displaying any one of or facing each other the features amount of defects, and the image during inspection or the reacquired image, and on the GUI of which a means is provided for setting the classification class and importance of the defects, and based on the classification class and the importance of the defects information set by this setting means, the classification conditions or the defect judging conditions are automatically or manually set so that the inspection conditions may be set easily.
摘要翻译：本发明涉及一种用于检查形成在半导体器件上的图案中的缺陷的缺陷检查装置，在其GUI上，为了确认检查结果，提供了用于显示任何一个或相互面对的特征量的缺陷，以及在检查期间的图像或重新获取的图像，并且在GUI上提供用于设置缺陷的分类等级和重要性的装置，并且基于分类等级和由该设置装置设置的缺陷信息的重要性，分类条件或缺陷判断条件自动或手动设定，以便容易地设定检查条件。

22. 发明授权

US07521676B2 Method and apparatus for inspecting pattern defects and mirror electron projection type or multi-beam scanning type electron beam apparatus 有权
标题翻译：用于检查图案缺陷和镜电子投影型或多光束扫描型电子束装置的方法和装置
公开(公告)号：US07521676B2
公开(公告)日：2009-04-21
申请号：US11601723
申请日：2006-11-20
申请人： Hirohito Okuda , Takashi Hiroi , Masaki Hasegawa , Shigeya Tanaka
发明人： Hirohito Okuda , Takashi Hiroi , Masaki Hasegawa , Shigeya Tanaka
IPC分类号： G01N23/225
CPC分类号： H01J37/026 , H01J37/292 , H01J2237/0048 , H01J2237/2817
摘要： The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.
摘要翻译：本发明提供一种能够进行条件建立的镜电子投射（MPJ）型（包括SEPJ型）扫描电子束装置，以及用扫描电子束装置检查图案缺陷的方法和装置。镜电子投影型缺陷检查装置，其包括用于发射充电电子束的充电装置，用于将镜电子投影电子束切除到形成有电位分布的检查区域的电子束照射装置，用于检测从检体的表面和邻近产生的二次电子或反射电子，以及用于通过处理由检测装置检测出的镜像信号来检测缺陷的缺陷检测装置，包括用于优化充电电子束照射条件的照射条件优化装置。

23. 发明申请

US20070069127A1 Apparatus and method for electron beam inspection with projection electron microscopy 有权
标题翻译：用投影电子显微镜进行电子束检查的装置和方法
公开(公告)号：US20070069127A1
公开(公告)日：2007-03-29
申请号：US11478615
申请日：2006-07-03
申请人： Hirohito Okuda , Takashi Hirol , Hiroshi Makino
发明人： Hirohito Okuda , Takashi Hirol , Hiroshi Makino
IPC分类号： G21K7/00
CPC分类号： H01J37/21 , G01R31/307 , H01J37/244 , H01J37/29 , H01J2237/216 , H01J2237/2443 , H01J2237/2446 , H01J2237/262
摘要： An apparatus and method for electron beam inspection with projection electron microscopy, is constructed so as to allow correction of changes in focus offsets due to changes in the electrically charged state particularly during inspection. The apparatus includes: a focus measure sensor unit; a focus measure calculation unit which calculates focus measure from the multiple image signals converted by the focus measure sensor unit; a focus position calculation unit which calculates the height of a confocal plane conjugate to the plane of convergence of a planar electron beam by an objective lens, on the basis of the calculated focus measure, and then calculates the focus position of the objective lens on the basis of the calculated height of the confocal plane; and a focus position correction unit which corrects the focus position of the objective lens according to the calculated focus position of the objective lens.
摘要翻译：用投影电子显微镜进行电子束检查的装置和方法被构造成允许校正由于带电状态的变化引起的焦点偏移变化，特别是在检查期间。该装置包括：焦距测量传感器单元; 焦点测量计算单元，其从由所述焦点测量传感器单元转换的多个图像信号计算焦点测量; 焦点位置计算单元，基于计算出的焦点测量，计算由物镜与平面电子束的会聚平面共轭的高度，然后计算物镜的聚焦位置共焦平面计算高度的基础; 以及聚焦位置校正单元，其根据计算出的物镜的聚焦位置校正物镜的聚焦位置。

24. 发明授权

US08111902B2 Method and apparatus for inspecting defects of circuit patterns 有权
标题翻译：检查电路图形缺陷的方法和装置
公开(公告)号：US08111902B2
公开(公告)日：2012-02-07
申请号：US11488734
申请日：2006-07-19
申请人： Takashi Hiroi , Naoki Hosoya , Hirohito Okuda , Koichi Hayakawa , Fumihiko Fukunaga
发明人： Takashi Hiroi , Naoki Hosoya , Hirohito Okuda , Koichi Hayakawa , Fumihiko Fukunaga
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： The present invention relates to a defect inspection apparatus for inspecting defects in patterns formed on a semiconductor device, on the GUI of which for the confirmation of the inspection results an area is provided for displaying any one of or facing each other the features amount of defects, and the image during inspection or the reacquired image, and on the GUI of which a means is provided for setting the classification class and importance of the defects, and based on the classification class and the importance of the defects information set by this setting means, the classification conditions or the defect judging conditions are automatically or manually set so that the inspection conditions may be set easily.
摘要翻译：本发明涉及一种用于检查形成在半导体器件上的图案中的缺陷的缺陷检查装置，在其GUI上，为了确认检查结果，提供了用于显示任何一个或相互面对的特征量的缺陷，以及在检查期间的图像或重新获取的图像，并且在GUI上提供用于设置缺陷的分类等级和重要性的装置，并且基于分类等级和由该设置装置设置的缺陷信息的重要性，分类条件或缺陷判断条件自动或手动设定，以便容易地设定检查条件。

25. 发明授权

US07420167B2 Apparatus and method for electron beam inspection with projection electron microscopy 有权
标题翻译：用投影电子显微镜进行电子束检查的装置和方法
公开(公告)号：US07420167B2
公开(公告)日：2008-09-02
申请号：US11478615
申请日：2006-07-03
申请人： Hirohito Okuda , Takashi Hiroi , Hiroshi Makino
发明人： Hirohito Okuda , Takashi Hiroi , Hiroshi Makino
IPC分类号： G21K7/00 , G01N23/00 , H01J3/14
CPC分类号： H01J37/21 , G01R31/307 , H01J37/244 , H01J37/29 , H01J2237/216 , H01J2237/2443 , H01J2237/2446 , H01J2237/262
摘要： An apparatus and method for electron beam inspection with projection electron microscopy, is constructed so as to allow correction of changes in focus offsets due to changes in the electrically charged state particularly during inspection. The apparatus includes: a focus measure sensor unit; a focus measure calculation unit which calculates focus measure from the multiple image signals converted by the focus measure sensor unit; a focus position calculation unit which calculates the height of a confocal plane conjugate to the plane of convergence of a planar electron beam by an objective lens, on the basis of the calculated focus measure, and then calculates the focus position of the objective lens on the basis of the calculated height of the confocal plane; and a focus position correction unit which corrects the focus position of the objective lens according to the calculated focus position of the objective lens.
摘要翻译：用投影电子显微镜进行电子束检查的装置和方法被构造成允许校正由于带电状态的变化引起的焦点偏移变化，特别是在检查期间。该装置包括：焦距测量传感器单元; 焦点测量计算单元，其从由所述焦点测量传感器单元转换的多个图像信号计算焦点测量; 焦点位置计算单元，基于计算出的焦点测量，计算由物镜与平面电子束的会聚平面共轭的高度，然后计算物镜的聚焦位置共焦平面计算高度的基础; 以及聚焦位置校正单元，其根据计算出的物镜的聚焦位置校正物镜的聚焦位置。

26. 发明申请

US20070194229A1 Method and apparatus for inspecting pattern defects and mirror electron projection Type or multi-beam scanning type electron beam apparatus 有权
标题翻译：用于检查图案缺陷和镜电子投影的方法和装置型或多光束扫描型电子束装置
公开(公告)号：US20070194229A1
公开(公告)日：2007-08-23
申请号：US11601723
申请日：2006-11-20
申请人： Hirohito Okuda , Takashi Hiroi , Masaki Hasegawa , Shigeya Tanaka
发明人： Hirohito Okuda , Takashi Hiroi , Masaki Hasegawa , Shigeya Tanaka
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J37/292 , H01J2237/0048 , H01J2237/2817
摘要： The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.
摘要翻译：本发明提供一种能够进行条件建立的镜电子投射（MPJ）型（包括SEPJ型）扫描电子束装置，以及用扫描电子束装置检查图案缺陷的方法和装置。镜电子投影型缺陷检查装置，其包括用于发射充电电子束的充电装置，用于将镜电子投影电子束切除到形成有电位分布的检查区域的电子束照射装置，用于检测从检体的表面和邻近产生的二次电子或反射电子，以及用于通过处理由检测装置检测出的镜像信号来检测缺陷的缺陷检测装置，包括用于优化充电电子束照射条件的照射条件优化装置。

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