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21. 发明授权

US08209849B2 Method for producing multilayer inductor 有权
标题翻译：多层电感器的制造方法
公开(公告)号：US08209849B2
公开(公告)日：2012-07-03
申请号：US12549903
申请日：2009-08-28
申请人： Hidekazu Sato , Masazumi Arata , Kunio Oda , Yoshimitsu Satoh
发明人： Hidekazu Sato , Masazumi Arata , Kunio Oda , Yoshimitsu Satoh
IPC分类号： H01F7/06
CPC分类号： H01F17/0013 , H01F3/14 , H01F17/04 , Y10T29/4902 , Y10T29/49071 , Y10T29/49073 , Y10T29/49163 , Y10T29/49169 , Y10T156/10
摘要： A method of A production method including interdiffusion of a Ni component in a magnetic layer and a Zn component in a nonmagnetic sheet to form an interdiffusion layer in a region of the nonmagnetic sheet inside a conductive pattern. This method allows the interdiffusion layer to be formed without need for complicated processing of the nonmagnetic sheet. Furthermore, there is no boundary region between the magnetic layer and the nonmagnetic sheet around it. The nonmagnetic layer is located between turns of a coiled conductor to suppress degradation of dc bias characteristics and a magnetic body penetrates in a region inside the coiled conductor to suppress reduction in inductance due to provision of the nonmagnetic layer between turns of the coiled conductor.
摘要翻译：一种制造方法，其包括磁性层中的Ni成分的相互扩散和非磁性片中的Zn成分，以在导电图案内部的非磁性片的区域中形成相互扩散层。该方法允许形成相互扩散层，而不需要非磁性片的复杂处理。此外，在磁性层和其周围的非磁性片之间没有边界区域。非磁性层位于线圈导体的匝之间，以抑制直流偏置特性的劣化，并且磁体穿过线圈导体内部的区域，以抑制由于在线圈导体的匝之间提供非磁性层而导致的电感降低。

22. 发明授权

US07915125B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07915125B2
公开(公告)日：2011-03-29
申请号：US12401007
申请日：2009-03-10
申请人： Hidekazu Sato
发明人： Hidekazu Sato
IPC分类号： H01L21/336
CPC分类号： H01L29/42364 , H01L21/823412 , H01L21/823462 , H01L27/088 , H01L29/0638 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/456 , H01L29/66681 , H01L29/7816
摘要： A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate; introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region; forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively.
摘要翻译：提供一种制造半导体器件的方法，其包括：在半导体衬底的有源区中形成第一栅极绝缘膜和第二栅极绝缘膜; 将第一导电类型的杂质引入要形成第一体区的第一位置，所述第一位置设置在所述有源区中的所述第一栅极绝缘膜下方; 在所述第一栅极绝缘膜和所述第二栅极绝缘膜的每一个上形成栅电极; 并将第一导电类型的杂质引入到第一部位和形成第二体区的第二部位，第二部位设置在有源区的第二栅极绝缘膜的下方，形成第一体区，第二体区。

23. 发明授权

US07851890B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07851890B2
公开(公告)日：2010-12-14
申请号：US11878509
申请日：2007-07-25
申请人： Hidekazu Sato , Toshihiro Wakabayashi
发明人： Hidekazu Sato , Toshihiro Wakabayashi
IPC分类号： H01L27/082 , H01L29/70
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/7378
摘要： By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this non-selective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
摘要翻译：通过非选择性外延生长方法，在氧化硅膜的整个表面上生长SiGe膜，以覆盖基部开口的内壁。这里，选择这样的成膜条件，即，在基底开口内部，由单晶形成底部，其它部分如侧壁部分由多晶形成，侧壁部分的膜厚小于或等于底部的膜厚度的1.5倍。在这种非选择性外延生长中，使用甲硅烷，氢，乙硼烷和锗烷作为源气体。然后，甲硅烷和氢气的流量分别设定为20sccm和20slm。此外，将生长温度设定为650℃，将乙硼烷的流量设定为75sccm，将锗烷的流量设定为35sccm。

24. 发明授权

US07119382B2 Heterobipolar transistor and method of fabricating the same 有权
公开(公告)号：US07119382B2
公开(公告)日：2006-10-10
申请号：US10413394
申请日：2003-04-15
申请人： Hidekazu Sato , Takae Sukegawa , Kousuke Suzuki
发明人： Hidekazu Sato , Takae Sukegawa , Kousuke Suzuki
IPC分类号： H01L31/0328 , H01L29/06
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/1608 , H01L29/7378
摘要： The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.

25. 发明授权

US07113389B2 Surface mounted electronic component 有权
标题翻译：表面安装电子元件
公开(公告)号：US07113389B2
公开(公告)日：2006-09-26
申请号：US11149304
申请日：2005-06-10
申请人： Michiru Ishifune , Yoji Tozawa , Toshiyuki Anbo , Hidekazu Sato , Shuumi Kumagai
发明人： Michiru Ishifune , Yoji Tozawa , Toshiyuki Anbo , Hidekazu Sato , Shuumi Kumagai
IPC分类号： H01G4/228 , H01G2/20
CPC分类号： H01G2/065 , H01F17/0013 , H01F27/292 , H05K3/3442 , H05K2201/09154 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , Y10T29/417
摘要： A multilayer inductor has a rectangular parallelepiped element body and its length in the lengthwise direction (L), length in the direction of height (H), and length in the direction of width (W) are L≦0.6 mm, H≦0.3 mm, and W≦0.3 mm, respectively. Terminal electrodes are provided so as to cover the vertices of the element body and come round to the side face from the end faces on both sides. The radius of curvature R of the vertex of the terminal electrode is set to a value being 10% or more and 20% or less of H or W.
摘要翻译：多层电感器具有长方体元件体，其长度方向（L）的长度，高度方向的长度（H）和宽度方向的长度（W）的长度L <= 0.6mm，H <= 0.3mm，W <= 0.3mm。端子电极被设置成覆盖元件主体的顶点并从两侧的端面到达侧面。端子电极的顶点的曲率半径R被设定为H或W的10％以上且20％以下的值。

26. 发明申请

US20060007640A1 Surface mounted electronic component 有权
标题翻译：表面安装电子元件
公开(公告)号：US20060007640A1
公开(公告)日：2006-01-12
申请号：US11149304
申请日：2005-06-10
申请人： Michiru Ishifune , Yoji Tozawa , Toshiyuki Anbo , Hidekazu Sato , Shuumi Kumagai
发明人： Michiru Ishifune , Yoji Tozawa , Toshiyuki Anbo , Hidekazu Sato , Shuumi Kumagai
IPC分类号： H01G9/00
CPC分类号： H01G2/065 , H01F17/0013 , H01F27/292 , H05K3/3442 , H05K2201/09154 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , Y10T29/417
摘要： A multilayer inductor has a rectangular parallelepiped element body and its length in the lengthwise direction (L), length in the direction of height (H), and length in the direction of width (W) are L≦0.6 mm, H≦0.3 mm, and W≦0.3 mm, respectively Terminal electrodes are provided so as to cover the vertices of the element body and come round to the side face from the end faces on both sides. The radius of curvature R of the vertex of the terminal electrode is set to a value being 10% or more and 20% or less of H or W.
摘要翻译：多层电感器具有长方体元件体，其长度方向（L）的长度，高度方向的长度（H）和宽度方向的长度（W）的长度L <= 0.6mm，H <= 0.3mm，W <= 0.3mm。端子电极被设置成覆盖元件主体的顶点并从两侧的端面到达侧面。端子电极的顶点的曲率半径R被设定为H或W的10％以上且20％以下的值。

27. 发明申请

US20050186749A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050186749A1
公开(公告)日：2005-08-25
申请号：US11117433
申请日：2005-04-29
申请人： Hidekazu Sato , Toshihiro Wakabayashi
发明人： Hidekazu Sato , Toshihiro Wakabayashi
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/082 , H01L27/102 , H01L29/70 , H01L29/73 , H01L29/732 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/11
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/7378
摘要： By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this non-selective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
摘要翻译：通过非选择性外延生长方法，在氧化硅膜的整个表面上生长SiGe膜，以覆盖基部开口的内壁。这里，选择这样的成膜条件，即，在基底开口内部，由单晶形成底部，其它部分如侧壁部分由多晶形成，侧壁部分的膜厚小于或等于底部的膜厚度的1.5倍。在这种非选择性外延生长中，使用甲硅烷，氢，乙硼烷和锗烷作为源气体。然后，甲硅烷和氢气的流量分别设定为20sccm和20slm。此外，将生长温度设定为650℃，将乙硼烷的流量设定为75sccm，将锗烷的流量设定为35sccm。

28. 发明授权

US5802476A Cordless telephone system having base unit with speaker 失效
标题翻译：无线电话系统具有带扬声器的基座单元
公开(公告)号：US5802476A
公开(公告)日：1998-09-01
申请号：US581331
申请日：1995-12-29
申请人： Kazunori Nakajima , Toshiharu Tajiri , Hidekazu Sato , Hiroshi Miyamoto , Takashi Enomoto , Tsutomu Iwaoka
发明人： Kazunori Nakajima , Toshiharu Tajiri , Hidekazu Sato , Hiroshi Miyamoto , Takashi Enomoto , Tsutomu Iwaoka
IPC分类号： H04M1/00 , H04M1/60 , H04M1/65 , H04M1/725 , H04Q7/30
CPC分类号： H04M1/72505 , H04M1/725 , H04M1/6505
摘要： In a cordless telephone set, a base unit which itself has no loudspeaker function is made to provide a loudspeaker function at low cost. The base unit 2 has a transmitting circuit 22 for transmitting an aural signal and data to the handset 1 and a receiving circuit 23 for receiving and extracting the aural signal and data transmitted from the handset 1. A line interface circuit 25 coupled to a telephone line 3, a loudspeaker 44, and a selector circuit 28 for switching connection of the aural signal line between the transmitting circuit 22, the receiving circuit 23, the interface circuit 25, and the loudspeaker 44 are provided. In normal use, the transmitting circuit 22 and the receiving circuit 23 of the base unit 2 are connected with the line interface circuit 25 via the selector circuit 28. When predetermined push buttons 17 on the handset 1 are operated, the base unit 2 controls the selector circuit 28 so that the telephone line 3 is connected to the loudspeaker 44 via the selector circuit 28.
摘要翻译：在无绳电话机中，本身没有扬声器功能的基座单元以低成本提供扬声器功能。基本单元2具有用于将听觉信号和数据发送到手持机1的发送电路22和用于接收和提取听筒信号和从手机1发送的数据的接收电路23.线路接口电路25耦合到电话线 3，扬声器44和用于在发送电路22，接收电路23，接口电路25和扬声器44之间切换听觉信号线的连接的选择器电路28。在正常使用中，基本单元2的发送电路22和接收电路23经由选择器电路28与线路接口电路25连接。当手机1上的预定按钮17被操作时，基座单元2控制选择器电路28，使得电话线3经由选择器电路28连接到扬声器44。

29. 发明申请

US20120104477A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120104477A1
公开(公告)日：2012-05-03
申请号：US13348487
申请日：2012-01-11
申请人： Kazuo Hashimi , Hidekazu Sato
发明人： Kazuo Hashimi , Hidekazu Sato
IPC分类号： H01L29/78
CPC分类号： H01L29/66636 , H01L21/02063 , H01L21/02071 , H01L21/3065 , H01L21/76802 , H01L21/76805 , H01L21/76814
摘要： A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.
摘要翻译：半导体器件制造方法包括以下步骤：（a）在半导体衬底上形成电介质膜; （b）通过干法蚀刻电介质膜; 和（c）在规定的温度条件下，在半导体衬底上提供热分解的原子氢，以除去由于干法而在半导体衬底中产生的损伤层。

30. 发明授权

US08114764B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08114764B2
公开(公告)日：2012-02-14
申请号：US12628899
申请日：2009-12-01
申请人： Kazuo Hashimi , Hidekazu Sato
发明人： Kazuo Hashimi , Hidekazu Sato
IPC分类号： H01L21/3205
CPC分类号： H01L29/66636 , H01L21/02063 , H01L21/02071 , H01L21/3065 , H01L21/76802 , H01L21/76805 , H01L21/76814
摘要： A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.
摘要翻译：半导体器件制造方法包括以下步骤：（a）在半导体衬底上形成电介质膜; （b）通过干法蚀刻电介质膜; 和（c）在规定的温度条件下，在半导体衬底上提供热分解的原子氢，以除去由于干法而在半导体衬底中产生的损伤层。

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