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21. 发明授权

US09076826B2 Plasma confinement ring assembly for plasma processing chambers 有权
标题翻译：等离子体处理室的等离子体约束环组件
公开(公告)号：US09076826B2
公开(公告)日：2015-07-07
申请号：US13021499
申请日：2011-02-04
申请人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
发明人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
IPC分类号： C23F1/00 , H01L21/67
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂器的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

22. 发明授权

US08900403B2 Semiconductor processing system having multiple decoupled plasma sources 有权
标题翻译：具有多个解耦等离子体源的半导体处理系统
公开(公告)号：US08900403B2
公开(公告)日：2014-12-02
申请号：US13104925
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32633 , H01J37/32899 , H01L21/3065
摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
摘要翻译：半导体基板处理系统包括具有处理区域和基板支撑体的室。该系统包括设置在基板支撑件上方的室内的顶板组件。顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。通过顶板组件形成一组排气通道。第二组等离子体微室形成在排气通道组内。气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。

23. 发明授权

US08520360B2 Electrostatic chuck with wafer backside plasma assisted dechuck 有权
标题翻译：带有晶片背面等离子体辅助脱扣的静电卡盘
公开(公告)号：US08520360B2
公开(公告)日：2013-08-27
申请号：US13185968
申请日：2011-07-19
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： H01L21/687
CPC分类号： H01L21/6831
摘要： An electrostatic chuck assembly useful in a plasma processing chamber, comprising a support surface on which a semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode which applies an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, at least one outlet in the support surface which delivers a heat transfer gas to an underside of the wafer, at least one gas passage connected to a source of heat transfer gas operable to supply heat transfer gas at a desired pressure to the at least one gas passage, and at least one cavity and plasma generating electrode along the at least one gas passage, the plasma generating electrode operable to form a dechucking plasma in the cavity, the dechucking plasma being effective to neutralize charges on the underside of the wafer and support surface of the electrostatic chuck and thereby reduce a residual sticking force between the wafer and the support surface.
摘要翻译：一种用于等离子体处理室的静电卡盘组件，包括：在处理室内的晶片时支撑半导体晶片的支撑表面;至少一个静电夹持电极，其将静电夹持力施加到支撑表面上的晶片当向夹持电极施加静电夹紧电压时，将支撑表面中的至少一个出口传送到晶片的下侧，将至少一个气体通道连接到可传导热量的热传递气体源将所需压力的气体转移到至少一个气体通道，以及沿着至少一个气体通道的至少一个空腔和等离子体产生电极，所述等离子体产生电极可操作以在空腔中形成解吸等离子体，所述除冰等离子体是有效的以抵消晶片的下侧和静电卡盘的支撑表面上的电荷，从而减少电荷在晶片和支撑表面之间的唾液粘滞力。

24. 发明申请

US20120278735A1 COMMUNICATION DEVICE FOR GENERATING A CONFERENCE PROVISIONING DATA SET 审中-公开
标题翻译：用于产生会议提供数据集的通信设备
公开(公告)号：US20120278735A1
公开(公告)日：2012-11-01
申请号：US13095136
申请日：2011-04-27
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： G06F3/01 , G06F15/16
CPC分类号： H04M3/562 , H04M3/567 , H04M2250/62
摘要： A communication method and device for generating a conference provisioning data set. A conference interface receives a user selected conference provider among a plurality of available conference providers presented to the user, and conference event detail associated with a conference event. The communication device further includes a conference provisioning agent for communicating with an enhanced conference server to generate the conference provisioning data set associated with the selected conference provider.
摘要翻译：一种用于生成会议提供数据集的通信方法和设备。会议接口在呈现给用户的多个可用会议提供者之间接收用户选择的会议提供商，以及与会议事件相关联的会议事件细节。通信设备还包括会议供应代理，用于与增强的会议服务器进行通信以生成与所选择的会议提供商相关联的会议供应数据集。

25. 发明申请

US20110103805A1 Methods for Accessing a Process Chamber Using a Dual Zone Gas Injector with Improved Optical Access 有权
标题翻译：使用改进的光学访问的双区域气体喷射器来访问处理室的方法
公开(公告)号：US20110103805A1
公开(公告)日：2011-05-05
申请号：US12987030
申请日：2011-01-07
申请人： Jeff A. Bogart , Leonard Sharpless , Harmeet Singh
发明人： Jeff A. Bogart , Leonard Sharpless , Harmeet Singh
IPC分类号： H04B10/00
CPC分类号： C23C16/513 , H01J37/3244
摘要： Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.
摘要翻译：提供了用于处理在处理室中发生的事件的方法。在一种方法中，操作包括携带气体并从处理室接收光信号到响应于具有用于过程分析的信噪比（SNR）的光信号而工作的分析工具。并且，在处理室和分析工具之间将承载的气体和光信号分成多个单独的气体和光信号。分隔通过单独的孔配置，使得孔一起保持在工具处接收的光信号的SNR。方法在第二孔中提供隔膜，将第二孔分成孔，所述孔被构造成减少光学接口窗口上的蚀刻和沉积并维持诊断终点处的期望SNR。

26. 发明授权

US07413992B2 Tungsten silicide etch process with reduced etch rate micro-loading 有权
标题翻译：硅化钨蚀刻工艺，降低蚀刻速率微加载
公开(公告)号：US07413992B2
公开(公告)日：2008-08-19
申请号：US11440163
申请日：2006-05-23
申请人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
发明人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

27. 发明申请

US20080083883A1 Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access 有权
标题翻译：使用具有改进的光学访问的双区域气体注入器来访问处理室的方法和装置
公开(公告)号：US20080083883A1
公开(公告)日：2008-04-10
申请号：US11544316
申请日：2006-10-06
申请人： Jeff A. Bogart , Leonard Sharpless , Harmeet Singh
发明人： Jeff A. Bogart , Leonard Sharpless , Harmeet Singh
IPC分类号： H01J27/24
CPC分类号： C23C16/513 , H01J37/3244
摘要： An injector provides optical access into a process chamber along an axial path from a diagnostic end point outside the process chamber through an optical access window. A hollow housing body receives first and second process gases, and surrounds the axial path. A sleeve in the body is urged against the body to minimize particle generation, and defines a first gas bore injecting the first process gas into the process chamber. A second gas bore of the sleeve surrounds the axial path for injecting the second process gas into the process chamber, allowing an optical signal to have a desired signal-to-noise ratio (SNR) at the end point. Methods provide a septum in the second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.
摘要翻译：注射器通过光学访问窗口从处理室外部的诊断终点沿着轴向路径向处理室提供光学访问。中空的壳体容纳第一和第二处理气体并且包围轴向路径。身体中的套筒被推靠在身体上以最小化颗粒产生，并且限定将第一工艺气体注入到处理室中的第一气孔。套筒的第二个气孔围绕轴向路径，用于将第二工艺气体注入到处理室中，从而允许光学信号在终点处具有期望的信噪比（SNR）。方法在第二孔中提供隔膜，将第二孔分成孔，其被配置为减少光学接口窗口的蚀刻和沉积，并在诊断终点处保持所需的SNR。

28. 发明申请

US20070169704A1 Apparatus for shielding process chamber port having dual zone and optical access features 审中-公开
标题翻译：用于屏蔽具有双区域和光学访问特征的处理室端口的装置
公开(公告)号：US20070169704A1
公开(公告)日：2007-07-26
申请号：US11472017
申请日：2006-06-20
申请人： Fangli Hao , Leonard Sharpless , Harmeet Singh
发明人： Fangli Hao , Leonard Sharpless , Harmeet Singh
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32477
摘要： A port in a window member provides first access to a process chamber interior for gas injection and second optical access for process analysis and measurement. Plasma-induced etching and deposition in a bore of a gas injector integral with the window member is reduced by a grounded shield surrounding an access region, and coatings reduce particle flaking from walls of a first clear optical aperture of the injector and from a second clear optical aperture of a gas and optical access fitting,. The shield surrounds the region, and is configured with couplers to hold the gas and optical access fitting to the window member for access to the injector. The couplers compress seals so that a gas bore in the fitting is sealed to a plenum of the injector, while allowing optical access into the chamber through the first clear optical aperture and the second clear optical aperture.
摘要翻译：窗口构件中的端口提供了用于气体注入和第二光学访问的处理室内部的第一次访问以用于过程分析和测量。等离子体诱导的蚀刻和沉积在与窗构件成一体的气体注射器的孔中，通过围绕进入区域的接地屏蔽减少，并且涂层减少了来自注射器的第一透明光学孔的壁的颗粒剥落，并且从第二透明气体和光学接入配件的光学孔径。屏蔽件围绕该区域，并且被配置有耦合器以将气体和光学接入配件保持到窗口构件以用于进入喷射器。联接器压缩密封件，使得配件中的气孔被密封到喷射器的气室，同时允许通过第一透明光学孔和第二透明光学孔进入腔室。

29. 发明授权

US09051647B2 Tunable multi-zone gas injection system 有权
公开(公告)号：US09051647B2
公开(公告)日：2015-06-09
申请号：US12605027
申请日：2009-10-23
申请人： David J. Cooperberg , Valid Vahedi , Douglas Ratto , Harmeet Singh , Neil Benjamin
发明人： David J. Cooperberg , Valid Vahedi , Douglas Ratto , Harmeet Singh , Neil Benjamin
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455 , C23C16/507 , H01J37/32
CPC分类号： C23C16/45574 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J2237/3323 , H01J2237/3344
摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

30. 发明授权

US08791392B2 Methods of fault detection for multiplexed heater array 有权
标题翻译：多路加热器阵列故障检测方法
公开(公告)号：US08791392B2
公开(公告)日：2014-07-29
申请号：US12910347
申请日：2010-10-22
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： H05B3/68 , H05B3/02
CPC分类号： H05B1/0233 , H01L21/67109 , H01L21/67288
摘要： Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.
摘要翻译：这里描述了一种检测用于在半导体处理装置中支撑半导体衬底的衬底支撑组件的多路复用多加热器区域加热板中的故障状况的方法。

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