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21. 发明授权

US06916678B2 Surface modification method 失效
标题翻译：表面改性方法
公开(公告)号：US06916678B2
公开(公告)日：2005-07-12
申请号：US10701431
申请日：2003-11-06
申请人： Hideo Kitagawa , Nobumasa Suzuki , Shinzo Uchiyama
发明人： Hideo Kitagawa , Nobumasa Suzuki , Shinzo Uchiyama
IPC分类号： C08J7/00 , H01J37/32 , H01L21/28 , H01L21/314 , H01L29/51 , H01L21/00
CPC分类号： H01L21/0234 , H01J37/32192 , H01L21/02332 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.
摘要翻译：通过利用等离子体对待处理的基板的表面进行改性的方法包括以下步骤：将基板的温度从200℃调节至400℃，引入包括氮原子的气体或包括惰性气体的混合气体，以及包括氮原子的气体进入等离子体处理室，调节等离子体处理室中的压力高于13.3Pa，在等离子体处理室中产生等离子体，并将等离子体中等于或小于10eV的离子注入待处理的基板中。

22. 发明授权

US06831112B2 Polyether, active-hydrogen ingredient, resin-forming composition, and process for producing foam 有权
标题翻译：聚醚，活性氢成分，树脂形成组合物，以及生产泡沫的方法
公开(公告)号：US06831112B2
公开(公告)日：2004-12-14
申请号：US10148225
申请日：2002-05-24
申请人： Motonao Kaku , Hidefumi Ohta , Hideo Kitagawa , Kenji Nishiyama , Munekazu Satake , Kunikiyo Yoshio , Koji Tsutsui
发明人： Motonao Kaku , Hidefumi Ohta , Hideo Kitagawa , Kenji Nishiyama , Munekazu Satake , Kunikiyo Yoshio , Koji Tsutsui
IPC分类号： C08G1828
CPC分类号： C08G65/3322 , C08G18/48 , C08G18/4812 , C08G18/4841 , C08G18/6674 , C08G18/6688 , C08G18/672 , C08G63/668 , C08G65/2609 , C08G65/2621 , C08G2101/00 , C08G2101/0008 , C08G2101/0025
摘要： The present invention relates to polyether compounds, active hydrogen compounds and resin-forming compositions composed of the polyols, and methods for producing foams by employing the active hydrogen components. These polyether compounds have a decreased number of moles of added EO thereby maintaining the hydrophobicity and have sufficient reactivity as polyol components of resins, thereby having high reaction rates. Therefore, it is possible to provide resins having excellent resin properties (tensile strength, flexural strength, water-absorption swelling ratio, etc.).
摘要翻译：本发明涉及由多元醇组成的聚醚化合物，活性氢化合物和树脂形成组合物，以及通过使用活性氢组分制备泡沫体的方法。这些聚醚化合物具有减少加入的EO的摩尔数，从而保持疏水性并且作为树脂的多元醇组分具有足够的反应性，从而具有高反应速率。因此，可以提供具有优异的树脂性（拉伸强度，弯曲强度，吸水膨胀率等）的树脂。

23. 发明授权

US06541982B2 Plasma density measuring method and apparatus, and plasma processing system using the same 失效
标题翻译：等离子体密度测量方法和装置，以及使用其的等离子体处理系统
公开(公告)号：US06541982B2
公开(公告)日：2003-04-01
申请号：US09760667
申请日：2001-01-17
申请人： Hideo Kitagawa , Nobumasa Suzuki
发明人： Hideo Kitagawa , Nobumasa Suzuki
IPC分类号： G01N2762
CPC分类号： G01R19/0061 , H05H1/0062
摘要： A plasma density measuring method which includes producing a surface wave at an interface between a dielectric member and a plasma, and measuring at least one of a plasma density and a relative change in plasma density, on the basis of the surface wave. A plasma processing system including a container having a window, and for storing therein a gas introduced thereinto, a dielectric member for closing the window of the container, a plasma voltage source for applying a high frequency voltage through the dielectric member to produce a plasma by use of the gas inside the container, wherein a predetermined process is performed by use of the thus produced plasma, a detecting system for detecting an electric field intensity distribution of a surface wave propagated through the dielectric member, and a feedback system for feeding back the result of detection by the detecting system, to determine a processing condition for the process.
摘要翻译：一种等离子体密度测量方法，其包括在介电构件和等离子体之间的界面处产生表面波，并且基于表面波测量等离子体密度和等离子体密度的相对变化中的至少一个。一种等离子体处理系统，包括具有窗口的容器，并且其中存储有引入其中的气体，用于封闭容器窗口的电介质构件，用于通过电介质构件施加高频电压以产生等离子体的等离子体电压源使用容器内部的气体，其中通过使用由此产生的等离子体执行预定处理，用于检测通过电介质构件传播的表面波的电场强度分布的检测系统，以及用于反馈由检测系统检测的结果，以确定该过程的处理条件。

24. 发明授权

US06410450B1 Process for producing a semiconductor device 有权
公开(公告)号：US06410450B1
公开(公告)日：2002-06-25
申请号：US09778930
申请日：2001-02-08
申请人： Hideo Kitagawa
发明人： Hideo Kitagawa
IPC分类号： H01L21302
摘要： In order to conduct ashing, etching or cleaning of an article to be processed to remove unnecessary matters therefrom and achieve a high processing rate and less charge-up damage by continuously forming negative ions at a high density and making the negative ions incident on the article, a plasma processing apparatus comprises a vacuum vessel, a supporting means for supporting an article to be processed in the vacuum vessel, a means for introducing a first gas into a plasma generating space, a means for feeding electric energy to the first gas in the plasma generating space to generate a plasma, a means for mixing a second gas into the plasma which has been introduced into a negative ion forming space communicating with the plasma generating space, thereby forming negative ions, and a means for drawing out the negative ions therefrom and feeding the negative ions to the article.

25. 发明授权

US08012822B2 Process for forming dielectric films 有权
标题翻译：电介质膜形成工艺
公开(公告)号：US08012822B2
公开(公告)日：2011-09-06
申请号：US12342360
申请日：2008-12-23
申请人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
发明人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
IPC分类号： H01L29/72
CPC分类号： H01L21/28229 , C23C14/185 , C23C14/34 , C23C14/5853 , C23C14/5893 , H01L21/02074 , H01L21/28185 , H01L21/3105 , H01L21/3145 , H01L21/31645 , H01L21/321 , H01L29/513 , H01L29/517
摘要： A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
摘要翻译：在硅衬底上形成至少含有金属原子，硅原子和氧原子的介电膜的工艺包括：氧化硅衬底表面部分以形成二氧化硅膜的第一步骤; 在非氧化性气氛中在二氧化硅膜上形成金属膜的第二工序; 在非氧化气氛中加热第三步骤，将构成金属膜的金属原子扩散到二氧化硅膜中; 以及氧化含有扩散金属原子的二氧化硅膜以形成含有金属原子，硅原子和氧原子的膜的第四步骤。

26. 发明授权

US07923360B2 Method of forming dielectric films 有权
标题翻译：形成介电膜的方法
公开(公告)号：US07923360B2
公开(公告)日：2011-04-12
申请号：US12342349
申请日：2008-12-23
申请人： Hideo Kitagawa , Naomu Kitano
发明人： Hideo Kitagawa , Naomu Kitano
IPC分类号： H01L21/425
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28229 , H01L21/3145 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.
摘要翻译：在硅衬底上形成包括金属硅酸盐的电介质膜的方法包括：氧化硅衬底的表层部分并形成二氧化硅膜的第一步骤; 在二氧化硅膜的表面上照射离子并使二氧化硅膜的表层部分成为具有Si-O内聚力的反应促进层的第二步骤; 在非氧化性气氛中将金属膜层叠在反应促进层上的第3工序; 以及将金属膜氧化并形成将金属从金属膜扩散到二氧化硅膜的金属硅酸盐膜的第四工序。

27. 发明申请

US20090170341A1 PROCESS FOR FORMING DIELECTRIC FILMS 有权
标题翻译：形成电介质膜的工艺
公开(公告)号：US20090170341A1
公开(公告)日：2009-07-02
申请号：US12342360
申请日：2008-12-23
申请人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
发明人： Naomu Kitano , Yusuke Fukuchi , Nobumasa Suzuki , Hideo Kitagawa
IPC分类号： H01L21/768
CPC分类号： H01L21/28229 , C23C14/185 , C23C14/34 , C23C14/5853 , C23C14/5893 , H01L21/02074 , H01L21/28185 , H01L21/3105 , H01L21/3145 , H01L21/31645 , H01L21/321 , H01L29/513 , H01L29/517
摘要： A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
摘要翻译：在硅衬底上形成至少含有金属原子，硅原子和氧原子的介电膜的工艺包括：氧化硅衬底的表面部分以形成二氧化硅膜的第一步骤; 在非氧化性气氛中在二氧化硅膜上形成金属膜的第二工序; 在非氧化气氛中加热第三步骤，将构成金属膜的金属原子扩散到二氧化硅膜中; 以及氧化含有扩散金属原子的二氧化硅膜以形成含有金属原子，硅原子和氧原子的膜的第四步骤。

28. 发明申请

US20070281107A1 PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20070281107A1
公开(公告)日：2007-12-06
申请号：US11755233
申请日：2007-05-30
申请人： Hideo Kitagawa
发明人： Hideo Kitagawa
IPC分类号： H05H1/24
CPC分类号： H01L21/0234 , H01J37/32192 , H01L21/02126 , H01L21/31155 , H01L21/3144
摘要： A method for irradiating plasma of a material to a substrate and introducing the material into the substrate includes an irradiation step of irradiating the plasma to the substrate during an irradiation time period in which the material is not diffused in the substrate, and a non-irradiation step of stopping irradiation of the plasma to the substrate during a non-irradiation time period in which the plasma disappears, wherein the irradiation step and the non-irradiation step are repeated.
摘要翻译：将材料的等离子体照射到基板并将材料引入基板的方法包括：照射步骤，在材料不在基板中扩散的照射时间段内照射等离子体到基板，并且不照射在等离子体消失的非照射时间段期间停止将等离子体照射到基板的步骤，其中重复照射步骤和非照射步骤。

29. 发明授权

US07238812B2 Tricyclic triazolobenzazepine derivatives, process for producing the same, and antiallergic agents 失效
标题翻译：三环三氮代氮杂吖庚因衍生物，其制备方法和抗过敏剂
公开(公告)号：US07238812B2
公开(公告)日：2007-07-03
申请号：US11269828
申请日：2005-11-09
申请人： Yasuo Ohtsuka , Toshio Nishizuka , Sohjiro Shiokawa , Seiji Tsutsumi , Mami Kawaguchi , Hideo Kitagawa , Hiromi Takata , Takashi Shishikura , Toyoaki Ishikura , Kenichi Fushihara , Yumiko Okada , Sachiko Miyamoto , Maki Shiobara
发明人： Yasuo Ohtsuka , Toshio Nishizuka , Sohjiro Shiokawa , Seiji Tsutsumi , Mami Kawaguchi , Hideo Kitagawa , Hiromi Takata , Takashi Shishikura , Toyoaki Ishikura , Kenichi Fushihara , Yumiko Okada , Sachiko Miyamoto , Maki Shiobara
IPC分类号： C07D249/04
CPC分类号： C07D487/04 , C07C59/76 , C07C69/738 , C07D249/04 , C07D401/12 , C07F9/6561
摘要： Tricyclic triazolobenzazepine derivatives in the form or a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereon. The compounds are useful as antiallergic agents and exhibit excellent bioavailability. wherein R1 represents hydrogen, OH, alkyl or phenyl alkyl, R2, R3, R4, and R5 represent hydrogen, halogen, optionally protected hydroxyl, formyl, optionally substituted alkyl, alkenyl, alkoxy or the like, and Q represents a group selected from the following groups (i) to (iv), halogen, or alkoxy:
摘要翻译：提供了形式或前体药物的三环三唑并苯并吖嗪衍生物。根据本发明的化合物是由式（I）表示的化合物及其上的药理学上可接受的盐和溶剂合物。这些化合物可用作抗过敏剂并且表现出优异的生物利用度。其中R 1表示氢，OH，烷基或苯基烷基，R 2，R 3，R 4，和R 5表示氢，卤素，任意保护的羟基，甲酰基，任选取代的烷基，烯基，烷氧基等，Q表示选自以下组（i）至（iv）中的基团，卤素或烷氧基：

30. 发明授权

US06426302B2 Process for producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06426302B2
公开(公告)日：2002-07-30
申请号：US09778943
申请日：2001-02-08
申请人： Hideo Kitagawa
发明人： Hideo Kitagawa
IPC分类号： H01L21302
CPC分类号： H01J37/32357 , H01J37/32422
摘要： A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a plasma generating space, means for feeding electric energy to the gas in the plasma generating space to generate a plasma, a metal member for forming negative ions which is provided on the downstream side of the plasma generating space in such a way that it comes into contact with particles of the plasma, and means for feeding the negative ions to the processing target. Utilizing the electric charge exchange reaction between plasma particles and metal surfaces, negative ions can be formed continuously and in a high density and also the negative ions can be made incident on a processing target to make ashing, etching or cleaning of the processing target to remove unwanted matter therefrom, so that a high processing rate and less charge-up damage can be achieved.
摘要翻译：一种等离子体处理装置，其具有真空容器和用于在真空容器内支撑加工对象的支撑装置，该装置包括用于将气体引入等离子体产生空间的装置，用于将电能馈送到等离子体产生空间中的气体的装置产生等离子体，用于形成负离子的金属构件，其以与等离子体的粒子接触的方式设置在等离子体产生空间的下游侧，以及用于将负离子供给到处理对象的装置。利用等离子体颗粒和金属表面之间的电荷交换反应，可以连续地和高密度地形成负离子，并且还可以使负离子入射到处理对象上，以使加工对象的灰化，蚀刻或清洁以去除从而可以实现高处理速率和较少的充电损伤。

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