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    • 24. 发明申请
    • Fabrication of Recordable Electrical Memory
    • 可记录电气存储器的制造
    • US20080286955A1
    • 2008-11-20
    • US11870215
    • 2007-10-10
    • Geoffrey Wen-Tai Shuy
    • Geoffrey Wen-Tai Shuy
    • H01L21/20H01L21/67
    • G11C11/5664B82Y10/00G11C13/0014G11C13/0069G11C2013/0083G11C2013/009G11C2213/33G11C2213/77Y10T29/41
    • A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers.
    • 存储器件的存储单元是通过在衬底上形成第一电极,将光掩模定位在相对于衬底的第一位置,并且基于光掩模上的图案在第一电极上形成第一材料层来制造的。 光掩模位于相对于基板的第二位置,并且基于光掩模上的图案在第一材料层的上方形成第二材料层,第二材料层从第一材料层偏移,使得第一 存储单元的子单元包括第一材料层而不是第二材料层,并且存储单元的第二子单元包括第一和第二材料层。 第二电极形成在第一和第二材料层的上方。
    • 28. 发明申请
    • Light emitting diode matrix
    • 发光二极管阵列
    • US20080099772A1
    • 2008-05-01
    • US11589705
    • 2006-10-30
    • Geoffrey Wen-Tai ShuyEnboa WuMing Lu
    • Geoffrey Wen-Tai ShuyEnboa WuMing Lu
    • H01L33/00H01L29/207
    • H01L27/156H01L33/385H01L33/62H01L2224/48137H01L2224/48139H01L2224/49113
    • A light source includes a light emitting diode (LED) module having a continuous substrate, a layer of n-type semiconductor material formed above the substrate, and a layer of p-type semiconductor material formed above the n-type semiconductor material. A p-n junction is formed between the p-type and n-type semiconductor materials. The p-type and n-type semiconductor materials are selected to emit light at the p-n junction when an electric current flows through the p-n junction. The LED module includes a plurality of electric contacts connected to the p-type semiconductor material, and at least one electric contact connected to the n-type semiconductor material. The electric contacts are configured to pass electric current through a plurality of regions in the p-n junction such that the plurality of regions have higher electric current densities and emit light brighter than areas outside of the plurality of regions.
    • 光源包括具有连续衬底的发光二极管(LED)模块,在衬底上形成的n型半导体材料层和形成在n型半导体材料上方的p型半导体材料层。 在p型和n型半导体材料之间形成p-n结。 当电流流过p-n结时,选择p型和n型半导体材料在p-n结处发光。 LED模块包括连接到p型半导体材料的多个电触点和连接到n型半导体材料的至少一个电触点。 电触点被配置为使电流通过p-n结中的多个区域,使得多个区域具有较高的电流密度并且发射比多个区域外的区域更亮的光。