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    • 21. 发明申请
    • Thin Film Transistor and Display Device, and Method for Manufacturing Thereof
    • 薄膜晶体管和显示装置及其制造方法
    • US20080315428A1
    • 2008-12-25
    • US10586661
    • 2005-02-15
    • Gen Fujii
    • Gen Fujii
    • H01L21/768H01L23/535
    • H01L29/66742G02F2001/136295H01L21/288H01L27/1285H01L27/1292H05K3/1241
    • The present invention discloses a display device and a manufacturing method thereof by which a manufacturing process can be simplified. Further, the present invention discloses technique for manufacturing a pattern such as a wiring into a desired shape with good controllability. A method for forming a pattern for constituting the display device according to the present invention comprises the steps of forming a first region and a second region; discharging a composition containing a pattern formation material to a region across the second region and the first region; and flowing a part of the composition discharged to the first region into the second region; wherein wettability with respect to the composition of the first region is lower than that of the second composition.
    • 本发明公开了一种可以简化制造工艺的显示装置及其制造方法。 此外,本发明公开了一种用于将诸如布线的图案制造成具有良好可控性的所需形状的技术。 根据本发明的用于形成用于构成显示装置的图案的方法包括以下步骤:形成第一区域和第二区域; 将含有图案形成材料的组合物排放到横跨第二区域和第一区域的区域; 并将排出到第一区域的组合物的一部分流入第二区域; 其中相对于第一区域的组合物的润湿性低于第二组合物的润湿性。
    • 30. 发明授权
    • Semiconductor device with liquid repellant layer
    • 具有排液层的半导体器件
    • US08242486B2
    • 2012-08-14
    • US11795510
    • 2006-02-07
    • Gen Fujii
    • Gen Fujii
    • H01L35/24H01L51/00
    • H01L27/283H01L23/5254H01L2924/0002H01L2924/00
    • An object is to provide technology for manufacturing a higher-reliability memory device and a semiconductor device that is equipped with the memory device at low cost. A semiconductor device of the present invention has a first conductive layer, a first insulating layer that is provided to be in contact with a side end portion of the first conductive layer, a second insulating layer that is provided over the first conductive layer and the first insulating layer, and a second conductive layer that is provided over the second insulating layer. The second insulating layer is formed of an insulating material, and wettability against a fluidized substance when the insulating material is fluidized, is higher for the first insulating layer than the first conductive layer.
    • 本发明的目的是提供一种制造高可靠性的存储器件和半导体器件的技术,该器件以低成本装备存储器件。 本发明的半导体器件具有第一导电层,设置成与第一导电层的侧端部接触的第一绝缘层,设置在第一导电层上的第二绝缘层和第一导电层 绝缘层和设置在第二绝缘层上的第二导电层。 第二绝缘层由绝缘材料形成,并且当绝缘材料流化时对流化物质的润湿性对于第一绝缘层比第一导电层高。