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1. 发明授权

US07727854B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07727854B2
公开(公告)日：2010-06-01
申请号：US10573155
申请日：2004-12-14
申请人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
发明人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
IPC分类号： H01L21/76
CPC分类号： G06K19/07749 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78684
摘要： An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.
摘要翻译： IC卡比磁卡贵，电子标签也更昂贵代替条形码。因此，本发明提供了与常规硅晶片的芯片相比可以以低成本批量生产的极薄的集成电路及其制造方法。本发明的一个特征在于，通过可以在玻璃基板，石英基板，不锈钢基板，具有柔软性的合成树脂制成的基板（例如丙烯酸酯）上形成图案的形成方法形成薄的集成电路，或类似物，除了大量衬底。此外，本发明的另一个特征是形成其中安装有根据本发明的薄膜集成电路和天线的ID芯片。

2. 发明申请

US20070004100A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070004100A1
公开(公告)日：2007-01-04
申请号：US10573155
申请日：2004-12-14
申请人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
发明人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
IPC分类号： H01L21/84 , H01L31/113
CPC分类号： G06K19/07749 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78684
摘要： An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.
摘要翻译： IC卡比磁卡贵，电子标签也更昂贵代替条形码。因此，本发明提供了与常规硅晶片的芯片相比可以以低成本批量生产的极薄的集成电路及其制造方法。本发明的一个特征在于，通过可以在玻璃基板，石英基板，不锈钢基板，具有柔软性的合成树脂制成的基板（例如丙烯酸酯）上形成图案的形成方法形成薄的集成电路，或类似物，除了大量衬底。此外，本发明的另一个特征是形成其中安装有根据本发明的薄膜集成电路和天线的ID芯片。

3. 发明授权

US08461013B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08461013B2
公开(公告)日：2013-06-11
申请号：US12776870
申请日：2010-05-10
申请人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
发明人： Shinji Maekawa , Gen Fujii , Junya Maruyama , Toru Takayama , Yumiko Fukumoto , Yasuyuki Arai
IPC分类号： H01L21/76
CPC分类号： G06K19/07749 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78684
摘要： An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.
摘要翻译： IC卡比磁卡贵，电子标签也更昂贵代替条形码。因此，本发明提供了与常规硅晶片的芯片相比可以以低成本批量生产的极薄的集成电路及其制造方法。本发明的一个特征在于，通过可以在玻璃基板，石英基板，不锈钢基板，具有柔软性的合成树脂制成的基板（例如丙烯酸酯）上形成图案的形成方法形成薄的集成电路，或类似物，除了大量衬底。此外，本发明的另一个特征是形成其中安装有根据本发明的薄膜集成电路和天线的ID芯片。

4. 发明授权

US06809023B2 Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film 失效
标题翻译：制造在晶体半导体膜中具有均匀晶粒的半导体器件的方法
公开(公告)号：US06809023B2
公开(公告)日：2004-10-26
申请号：US10112717
申请日：2002-04-02
申请人： Yasuyuki Arai , Shinji Maekawa
发明人： Yasuyuki Arai , Shinji Maekawa
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L21/324 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78633 , H01L29/78675
摘要： A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.
摘要翻译：通过使用金属元素的热结晶法获得的结晶半导体膜中的晶粒的晶粒尺寸减小。因此，使器件的有源区域中的晶粒数量均匀。对于形成在比形成半导体膜的温度低的半导体膜上形成的半导体膜和在半导体膜结晶时，进行使用金属元素的热结晶法。通过在半导体膜结晶的步骤中进行热处理，绝缘膜的应力被施加到半导体膜，从而导致半导体膜的变形。当引起变形时，改变表面能和半导体膜的化学势，促进天然核的产生。因此，由于晶核的产生密度增加，因此可以降低晶粒的晶粒尺寸。

5. 发明授权

US08322847B2 Liquid droplet ejection system and control program of ejection condition of compositions 有权
标题翻译：液滴喷射系统和组合物喷射条件控制程序
公开(公告)号：US08322847B2
公开(公告)日：2012-12-04
申请号：US13049078
申请日：2011-03-16
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
IPC分类号： B41J2/01 , B05B7/06 , H01L21/36
CPC分类号： H01L51/0004 , H01L51/56 , H05K1/0269 , H05K3/0008 , H05K3/1241
摘要： When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate.
摘要翻译：当使用液滴喷射方法时，不需要常规的光掩模，然而，需要至少在喷射液滴时精确地控制喷嘴或基板的移动路径。根据要喷射的组合物或其图案的特征，这种喷射条件期望设置为喷嘴或基底的移动速率，喷射量，喷射距离和组合物的喷射速率，组合物喷出的空间的气氛，空间的温度和湿度，以及基板的加热温度。根据本发明的液滴喷射系统包括用于输入薄膜图案的数据的输入装置，用于设置用于喷射包含用于形成薄膜的材料的组合物的喷嘴的设定装置或设置该薄膜图案的移动路径用于检测形成在基板上的取向标记的图像拾取装置和用于控制喷嘴或基板的移动路径的控制装置。

6. 发明授权

US08263983B2 Wiring substrate and semiconductor device 有权
标题翻译：接线基板和半导体器件
公开(公告)号：US08263983B2
公开(公告)日：2012-09-11
申请号：US10973986
申请日：2004-10-27
申请人： Shinji Maekawa , Yasuyuki Arai
发明人： Shinji Maekawa , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L29/76
CPC分类号： H05K3/1208 , G02F2001/136295 , H01L27/1285 , H01L27/1292 , H05K3/125 , H05K3/38 , H05K3/386 , H05K2201/0116 , H05K2203/013
摘要： The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
摘要翻译：本发明提供了一种薄布线图案，例如通过放电液滴形成的布线。在本发明中，通过使用液滴喷射法（也称为喷墨法），在形成图案中形成多孔（包括微孔）物质作为基膜。根据本发明的布线基板的一个特征在其上提供多孔膜和导电层。本发明的半导体器件的一个特征是提供一种薄膜晶体管，其中栅极由具有上述结构的导电层形成。

7. 发明授权

US06953717B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06953717B2
公开(公告)日：2005-10-11
申请号：US10959071
申请日：2004-10-07
申请人： Yasuyuki Arai , Shinji Maekawa
发明人： Yasuyuki Arai , Shinji Maekawa
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L21/324 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78633 , H01L29/78675
摘要： A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.
摘要翻译：通过使用金属元素的热结晶法获得的结晶半导体膜中的晶粒的晶粒尺寸减小。因此，使器件的有源区域中的晶粒数量均匀。对于形成在比形成半导体膜的温度低的半导体膜上形成的半导体膜和在半导体膜结晶时，进行使用金属元素的热结晶法。通过在半导体膜结晶的步骤中进行热处理，绝缘膜的应力被施加到半导体膜，从而导致半导体膜的变形。当引起变形时，改变表面能和半导体膜的化学势，促进天然核的产生。因此，由于晶核的产生密度增加，因此可以降低晶粒的晶粒尺寸。

8. 发明申请

US20050048684A1 Method of manufacturing semiconductor device 有权
公开(公告)号：US20050048684A1
公开(公告)日：2005-03-03
申请号：US10959071
申请日：2004-10-07
申请人： Yasuyuki Arai , Shinji Maekawa
发明人： Yasuyuki Arai , Shinji Maekawa
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L21/324 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78633 , H01L29/78675
摘要： A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.

9. 发明申请

US20060006388A1 Method of manufacturing semiconductor device 有权
公开(公告)号：US20060006388A1
公开(公告)日：2006-01-12
申请号：US11222763
申请日：2005-09-12
申请人： Yasuyuki Arai , Shinji Maekawa
发明人： Yasuyuki Arai , Shinji Maekawa
IPC分类号： H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L21/324 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78633 , H01L29/78675
摘要： A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.

10. 发明申请

US20050121675A1 Wiring substrate, semiconductor device, and method for manufacturing thereof 有权
标题翻译：配线基板，半导体装置及其制造方法
公开(公告)号：US20050121675A1
公开(公告)日：2005-06-09
申请号：US10973986
申请日：2004-10-27
申请人： Shinji Maekawa , Yasuyuki Arai
发明人： Shinji Maekawa , Yasuyuki Arai
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H05K3/12 , H05K3/38 , H01L29/04
CPC分类号： H05K3/1208 , G02F2001/136295 , H01L27/1285 , H01L27/1292 , H05K3/125 , H05K3/38 , H05K3/386 , H05K2201/0116 , H05K2203/013
摘要： It is an object of the present invention to provide a technique for forming a thin wiring in forming a pattern such as wiring by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
摘要翻译：本发明的目的是提供一种通过排出液滴来形成诸如布线等图案的薄布线的技术。在本发明中，通过使用液滴喷射法（也称为喷墨法），在形成图案中形成多孔（包括微孔）物质作为基膜。根据本发明的布线基板的一个特征在其上提供多孔膜和导电层。本发明的半导体器件的一个特征是提供一种薄膜晶体管，其中栅极由具有上述结构的导电层形成。

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