专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06347636B1 Methods and apparatus for gettering fluorine from chamber material surfaces 有权
标题翻译：从室材料表面吸除氟的方法和设备
公开(公告)号：US06347636B1
公开(公告)日：2002-02-19
申请号：US09340602
申请日：1999-06-25
申请人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
发明人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
IPC分类号： B08B600
CPC分类号： B08B7/0035 , C23C16/4405 , H01L21/67017 , Y10S438/905
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

22. 发明申请

US20050020048A1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US20050020048A1
公开(公告)日：2005-01-27
申请号：US10894872
申请日：2004-07-20
申请人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： C23C16/42 , C23C16/32 , H01L21/20 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/331
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

23. 发明授权

US06589888B2 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers 有权
标题翻译：双频等离子体增强化学气相沉积碳化硅层
公开(公告)号：US06589888B2
公开(公告)日：2003-07-08
申请号：US10238195
申请日：2002-09-09
申请人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
发明人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , C23C16/325 , C23C16/505 , H01L21/0276 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/7681
摘要： A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture of a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RE) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
摘要翻译：公开了一种用于形成用于集成电路制造的碳化硅层的方法。碳化硅层通过在电场存在下使硅源，碳源和惰性气体的气体混合物反应而形成。使用混合频率射频（RE）功率产生电场。碳化硅层与集成电路制造工艺兼容。在一个集成电路制造工艺中，碳化硅层用作用于制造集成电路结构的硬掩模，例如镶嵌结构。在另一个集成电路制造工艺中，碳化硅层用作用于DUV光刻的抗反射涂层（ARC）。

24. 发明授权

US06348099B1 Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions 有权
标题翻译：在低于大气压和高温条件下沉积金属前介质层的方法和装置
公开(公告)号：US06348099B1
公开(公告)日：2002-02-19
申请号：US09334437
申请日：1999-06-16
申请人： Li-Qun Xia , Ellie Yieh , Srinivas Nemani
发明人： Li-Qun Xia , Ellie Yieh , Srinivas Nemani
IPC分类号： C23C1600
CPC分类号： H01L21/31625 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02301 , H01L21/02312 , H01L21/02315 , H01L21/0234 , H01L21/02362
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

25. 发明授权

US5812403A Methods and apparatus for cleaning surfaces in a substrate processing system 失效
标题翻译：在基板处理系统中清洁表面的方法和装置
公开(公告)号：US5812403A
公开(公告)日：1998-09-22
申请号：US748095
申请日：1996-11-13
申请人： Gary Fong , Li-Qun Xia , Srinivas Nemani , Ellie Yieh
发明人： Gary Fong , Li-Qun Xia , Srinivas Nemani , Ellie Yieh
IPC分类号： B08B7/00 , C23C16/44 , C23C16/455 , C23C16/511 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/31 , G06F19/00
CPC分类号： C23C16/45512 , B08B7/0035 , C23C16/4404 , C23C16/4405
摘要： The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供了一种清洁处理室的方法。根据具体实施方式，该方法包括以下步骤：在第一时间段内在处理室中的陶瓷加热器上的晶片上沉积电介质膜，陶瓷加热器在第一温度下加热至少约500℃ 沉积步骤; 以及在第二时间段内从被输入到远程微波等离子体系统的清洁气体将反应物质引入到处理室中，在引入步骤期间陶瓷加热器加热至至少约500℃的第二温度。该方法还包括清洁处理室中的表面，并进行由反应物质进行的清洁。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

26. 发明授权

US5935340A Method and apparatus for gettering fluorine from chamber material surfaces 失效
标题翻译：从室材料表面吸除氟的方法和设备
公开(公告)号：US5935340A
公开(公告)日：1999-08-10
申请号：US747892
申请日：1996-11-13
申请人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
发明人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
IPC分类号： B08B7/00 , C23C16/44 , H01L21/00 , B08B6/00
CPC分类号： H01L21/67017 , B08B7/0035 , C23C16/4405
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高纵横比器件的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

27. 发明申请

US20080132087A1 POST-DEPOSITION TREATMENT TO ENHANCE PROPERTIES OF SI-O-C LOW K FILMS 失效
标题翻译：后沉积处理以提高SI-O-C低K膜的性能
公开(公告)号：US20080132087A1
公开(公告)日：2008-06-05
申请号：US12013232
申请日：2008-01-11
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

28. 发明授权

US06602806B1 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film 失效
标题翻译：用于沉积低介电常数碳掺杂氧化硅膜的热CVD工艺
公开(公告)号：US06602806B1
公开(公告)日：2003-08-05
申请号：US09632668
申请日：2000-08-07
申请人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02129 , H01L21/02211 , H01L21/02271 , H01L21/02312 , H01L21/0234 , H01L21/02362 , H01L21/31633
摘要： A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.
摘要翻译：一种提供具有低介电常数的电介质膜的方法。沉积膜特别可用作集成电路中的金属间或前金属介电层。低介电常数膜是从与CVD等离子体相反的CVD法沉积的碳掺杂氧化硅层。该层由臭氧的工艺气体和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体沉积。在沉积过程中，将晶片加热到低于250℃的温度，优选加热到100-200℃之间的温度。对该方法的增强包括加入硼和/或磷掺杂剂，两步沉积和封盖柱固化层。

29. 发明授权

US06858923B2 Post-deposition treatment to enhance properties of Si-O-C low films 有权
标题翻译：后沉积处理以增强Si-O-C低电阻膜的性能
公开(公告)号：US06858923B2
公开(公告)日：2005-02-22
申请号：US10293096
申请日：2002-11-12
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： C23C16/02 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/314 , H01L21/316 , H01L23/02
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

30. 发明授权

US06750141B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06750141B2
公开(公告)日：2004-06-15
申请号：US10236800
申请日：2002-09-06
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式