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21. 发明申请

US20110014552A1 Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
标题翻译：用于执行暗场双偶极平版印刷术（DDL）的方法和装置
公开(公告)号：US20110014552A1
公开(公告)日：2011-01-20
申请号：US12890494
申请日：2010-09-24
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

22. 发明授权

US07666554B2 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US07666554B2
公开(公告)日：2010-02-23
申请号：US11588326
申请日：2006-10-27
申请人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
发明人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
IPC分类号： G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

23. 发明授权

US07355673B2 Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout 有权
标题翻译：使用设备布局的NA-Sigma曝光设置和散射棒OPC的同时优化的方法，程序产品和设备
公开(公告)号：US07355673B2
公开(公告)日：2008-04-08
申请号：US10878489
申请日：2004-06-29
申请人： Duan-Fu Stephen Hsu , Armin Liebchen
发明人： Duan-Fu Stephen Hsu , Armin Liebchen
IPC分类号： G03B27/42 , G03B27/54 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G03F7/70425
摘要： Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.
摘要翻译： Disclose是一种基于目标布局优化光刻系统的数值孔径（“NA”）和sigma的方法，程序产品和设备。执行音调或间隔分析以确定设计上的关键音高的分布。基于间距或间隔分析，确定了一个临界密度。 NA，sigma-in，sigma-out参数被优化，使得临界特征将在有或没有偏置调整的情况下打印。对于临界致密特征以外的特征，根据OPC进行调整，并进一步相互优化光刻设备设置。因此，可以对于与OPC同时的任何图案来优化光刻设备设置。

24. 发明授权

US07100145B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
公开(公告)号：US07100145B2
公开(公告)日：2006-08-29
申请号：US10938510
申请日：2004-09-13
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

25. 发明授权

US08644589B2 Method and apparatus for performing model-based OPC for pattern decomposed features 失效
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US08644589B2
公开(公告)日：2014-02-04
申请号：US13786249
申请日：2013-03-05
申请人： Duan-Fu Stephen Hsu , Jungchul Park , Doug Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jungchul Park , Doug Van Den Broeke , Jang Fung Chen
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

26. 发明申请

US20130182940A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20130182940A1
公开(公告)日：2013-07-18
申请号：US13786249
申请日：2013-03-05
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06T7/00
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

27. 发明授权

US08391605B2 Method and apparatus for performing model-based OPC for pattern decomposed features 失效
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US08391605B2
公开(公告)日：2013-03-05
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

28. 发明授权

US08132130B2 Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权
标题翻译：用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置
公开(公告)号：US08132130B2
公开(公告)日：2012-03-06
申请号：US11472544
申请日：2006-06-22
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译：一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

29. 发明授权

US07892703B2 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US07892703B2
公开(公告)日：2011-02-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/34 , G03F1/32
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

30. 发明授权

US07824826B2 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US07824826B2
公开(公告)日：2010-11-02
申请号：US11783261
申请日：2007-04-06
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G03F1/14 , G03F7/20 , G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.
摘要翻译：一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。

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