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21. 发明授权

US06184073B2 Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region 失效
标题翻译：用于形成具有与导电部件或区域电绝缘的互连或导电膜的半导体器件的工艺
公开(公告)号：US06184073B2
公开(公告)日：2001-02-06
申请号：US08997714
申请日：1997-12-23
申请人： Craig S. Lage , Mousumi Bhat , Yeong-Jyh Tom Lii , Andrew G. Nagy , Larry E. Frisa , Stanley M. Filipiak , David L. O'Meara , T. P. Ong , Michael P. Woo , Terry G. Sparks , Carol M. Gelatos
发明人： Craig S. Lage , Mousumi Bhat , Yeong-Jyh Tom Lii , Andrew G. Nagy , Larry E. Frisa , Stanley M. Filipiak , David L. O'Meara , T. P. Ong , Michael P. Woo , Terry G. Sparks , Carol M. Gelatos
IPC分类号： H01L218234
CPC分类号： H01L27/11 , H01L21/76801 , H01L21/76832 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L27/1104
摘要： A semiconductor device includes a memory array of static-random-access memory cells. The SRAM cells are formed using a process flow more closely associated with logic-type devices. The SRAM cells are formed using one semiconductor layer compared to at least three typically seen with SRAM cells. The SRAM cells include many features that allow its dimensions to be scaled to very small dimensions (less than 0.25 microns and possible down to 0.1 microns or even smaller). A unique process integration scheme allows formation of local interconnects (522 and 524), wherein each local interconnect (522, 524) cross couples the inverters of the SRAM and is formed within a single opening (70). Also, interconnect portions (104) of word lines are laterally offset from silicon portions (36) of the same word line, so that the interconnect portions do not interfere with bit line connections.
摘要翻译：半导体器件包括静态随机存取存储器单元的存储器阵列。使用与逻辑型器件更紧密相关联的工艺流程来形成SRAM单元。 SRAM单元使用一个半导体层形成，与至少三个SRAM单元相似。 SRAM单元包括许多特征，允许其尺寸缩放到非常小的尺寸（小于0.25微米，并且可能低至0.1微米甚至更小）。独特的过程集成方案允许形成局部互连（522和524），其中每个局部互连（522,524）交叉耦合SRAM的反相器并形成在单个开口（70）内。此外，字线的互连部分（104）横向偏离同一字线的硅部分（36），使得互连部分不干扰位线连接。

22. 发明授权

US4992306A Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources 失效
标题翻译：使用叠氮硅烷源沉积二氧化硅和氧氮化硅膜
公开(公告)号：US4992306A
公开(公告)日：1991-02-12
申请号：US473503
申请日：1990-02-01
申请人： Arthur K. Hochberg , David L. O'Meara , David A. Roberts
发明人： Arthur K. Hochberg , David L. O'Meara , David A. Roberts
IPC分类号： C23C16/30 , C23C16/40
CPC分类号： C23C16/402 , C23C16/308
摘要： A low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350.degree. C. to about 700.degree. C. in a chemical vapor deposition reactor at a pressure of from about 0.1 torr to atmospheric pressure, introducing into the reactor a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, and R.sub.3 are hydrogen, azido or 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R.sub.1 and R.sub.2 being 1-6 carbon alkyl, phenyl or 7-10 carbon alkaryl and maintaining the temperature and pressure in said ranges to cause a film of silicon dioxide or silicon oxynitride to deposit on said substrate is disclosed.
摘要翻译：一种低温化学气相沉积方法，包括在化学气相沉积反应器中以约0.1托至大气压的压力加热需要沉积的基底至约350℃至约700℃的温度，将含硅进料和含氧进料引入反应器中，所述含硅进料基本上由一种或多种具有通式为“IMAGE”的化合物组成，其中：R 1，R 2和R 3为氢，叠氮基或1-6碳烷基，苯基或7至10个碳烷芳基，R 1和R 2中的至少一个为1-6个碳烷基，苯基或7-10碳烷芳基，并保持所述范围内的温度和压力，以引起二氧化硅或硅公开了氮氧化物沉积在所述衬底上。

23. 发明授权

US4992299A Deposition of silicon nitride films from azidosilane sources 失效
标题翻译：从叠氮硅烷源沉积氮化硅膜
公开(公告)号：US4992299A
公开(公告)日：1991-02-12
申请号：US473300
申请日：1990-02-01
申请人： Arthur K. Hochberg , David L. O'Meara , David A. Roberts
发明人： Arthur K. Hochberg , David L. O'Meara , David A. Roberts
IPC分类号： C23C16/34 , H01L21/318
CPC分类号： C23C16/345 , H01L21/3185
摘要： A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R.sub.1 R.sub.2 and R.sub.3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R.sub.1, R.sub.2, and R.sub.3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.
摘要翻译：其中R 1 + L，R 2 + L和R 3为氢化叠氮基，1至6个碳烷基的化合物在所述表面上通过热分解在基底表面上生产氮化硅膜的方法，苯基或7至10个碳烷芳基，其中R 1，R 2和R 3中的至少一个为1-6个碳烷基，苯基或7至10个碳烷芳基，乙基三氮杂硅烷具有独特优势。

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