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21. 发明授权

US07648816B2 Positive resist composition, method for forming resist pattern and compound 有权
标题翻译：正性抗蚀剂组合物，形成抗蚀剂图案和化合物的方法
公开(公告)号：US07648816B2
公开(公告)日：2010-01-19
申请号：US11817012
申请日：2006-02-20
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C07C39/04
CPC分类号： G03F7/0397 , C07C69/712 , C07C2601/14 , C07C2603/74 , G03F7/0045 , G03F7/0392 , Y10S430/106
摘要： A positive resist composition that includes a base material component (A) that contains an acid-dissociable, dissolution-inhibiting group and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) contains a compound (A1), in which either a portion of, or all of, the hydrogen atoms of phenolic hydroxyl groups within a polyhydric phenol compound with a molecular weight of 300 to 2,500 represented by a general formula (I) shown below have been substituted with at least one group selected from the group consisting of acid-dissociable, dissolution-inhibiting groups represented by a general formula (II) shown below and acid-dissociable, dissolution-inhibiting groups represented by a general formula (III) shown below.
摘要翻译：一种正性抗蚀剂组合物，其包含含有酸解离的溶解抑制基团并且在酸的作用下表现出增加的碱溶解性的基材成分（A）和暴露时产生酸的酸产生剂成分（B），其中基材成分（A）含有化合物（A1），其中分子量为300〜2,500的多元酚化合物中的酚羟基的氢原子的一部分或全部由通式下述的（I）所示的化合物被选自由下述通式（II）表示的酸解离性，溶解抑制基团和酸解离性，通式式（III）如下所示。

22. 发明授权

US08206887B2 Positive resist composition and resist pattern forming method 有权
标题翻译：正抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US08206887B2
公开(公告)日：2012-06-26
申请号：US11914451
申请日：2006-04-26
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
IPC分类号： G03C1/00 , G03F7/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要翻译：正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物（A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

23. 发明授权

US07981588B2 Negative resist composition and method of forming resist pattern 失效
标题翻译：抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07981588B2
公开(公告)日：2011-07-19
申请号：US11813511
申请日：2006-02-01
申请人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
发明人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
IPC分类号： G03C1/00
CPC分类号： G03F7/038
摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要翻译：提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物（A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

24. 发明授权

US07923192B2 Base material for pattern-forming material, positive resist composition and method of resist pattern formation 有权
标题翻译：用于图案形成材料的基材，正型抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07923192B2
公开(公告)日：2011-04-12
申请号：US10590046
申请日：2005-02-08
申请人： Taku Hirayama , Daiju Shiono , Tasuku Matsumiya , Yohei Kinoshita
发明人： Taku Hirayama , Daiju Shiono , Tasuku Matsumiya , Yohei Kinoshita
IPC分类号： G03C1/00 , G03F7/00 , G03F1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A base material for a pattern-forming material, a positive resist composition, and a method of resist pattern formation that are capable of forming a high resolution pattern with reduced levels of LER. The base material includes a low molecular weight compound (X1), which is formed from a polyhydric phenol compound (x) that contains two or more phenolic hydroxyl groups and satisfies the conditions (1), (2), and (3) described below, wherein either a portion of, or all of, the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups: (1) a molecular weight within a range from 300 to 2,500, (2) a molecular weight dispersity of no more than 1.5, and (3) an ability to form an amorphous film using a spin coating method. Alternatively, the base material includes a protected material (Y1), which is formed from a polyhydric phenol compound (y) that contains two or more phenolic hydroxyl groups and has a molecular weight within a range from 300 to 2,500, in which a predetermined proportion of the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups.
摘要翻译：用于图案形成材料的基材，正型抗蚀剂组合物和抗蚀剂图案形成方法，其能够形成具有降低的LER水平的高分辨率图案。基材包含由含有两个以上酚羟基的多元酚化合物（x）形成并满足下述条件（1），（2）和（3）的低分子量化合物（X1）其中酚羟基的一部分或全部被酸解离，溶解抑制基团保护：（1）分子量在300-2,500范围内，（2）分子量分散度不大于 1.5，和（3）使用旋涂法形成非晶膜的能力。或者，基材包含由多元酚化合物（y）形成的保护材料（Y1），所述多元酚化合物（y）含有两个或更多个酚羟基并且具有300-2,500的分子量，其中预定比例的酚羟基被酸解离，溶解抑制基团保护。

25. 发明申请

US20090269693A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：负极组合物和形成耐力图案的方法
公开(公告)号：US20090269693A1
公开(公告)日：2009-10-29
申请号：US11813511
申请日：2006-02-01
申请人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
发明人： Takako Hirosaki , Taku Hirayama , Daiju Shiono
IPC分类号： G03F7/038 , G03F7/20
CPC分类号： G03F7/038
摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要翻译：提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物（A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

26. 发明申请

US20090092921A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090092921A1
公开(公告)日：2009-04-09
申请号：US11914451
申请日：2006-04-26
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要翻译：正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物（A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

27. 发明授权

US07504196B2 Positive resist composition, method for resist pattern formation and compound 失效
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法和化合物
公开(公告)号：US07504196B2
公开(公告)日：2009-03-17
申请号：US11884748
申请日：2006-02-09
申请人： Daju Shiono , Taku Hirayama , Hideo Hada
发明人： Daju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A positive resist composition that includes a base material component (A) that contains an acid-dissociable, dissolution-inhibiting group and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) contains a compound (A1), in which either a portion of, or all of, hydrogen atoms of phenolic hydroxyl groups within a polyhydric phenol compound, which has two or more phenolic hydroxyl groups, a molecular weight of 300 to 2,500, and is represented by a general formula (I) shown below, have been substituted with an acid-dissociable, dissolution-inhibiting group (II) represented by a general formula (II) shown below.
摘要翻译：一种正性抗蚀剂组合物，其包含含有酸解离的溶解抑制基团并且在酸的作用下表现出增加的碱溶解性的基材成分（A）和暴露时产生酸的酸产生剂成分（B），其中基材成分（A）含有具有两个以上酚羟基的多元酚化合物中的酚羟基的一部分或全部氢原子的一部分或全部的化合物（A1），其分子量为 300〜2500，由下述通式（I）表示，用下述通式（II）表示的酸解离性溶解抑制基团（II）代替。

28. 发明申请

US20070178394A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20070178394A1
公开(公告)日：2007-08-02
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C5/00
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

29. 发明申请

US20090130605A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20090130605A1
公开(公告)日：2009-05-21
申请号：US12252319
申请日：2008-10-15
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/20
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

30. 发明授权

US07527909B2 Resist composition 有权
公开(公告)号：US07527909B2
公开(公告)日：2009-05-05
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

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