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21. 发明授权

US06344129B1 Method for plating copper conductors and devices formed 有权
标题翻译：电镀铜导体和器件的方法
公开(公告)号：US06344129B1
公开(公告)日：2002-02-05
申请号：US09418197
申请日：1999-10-13
申请人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
发明人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
IPC分类号： C25D500
CPC分类号： C25D5/10 , C25D3/38 , C25D5/00 , C25D7/123 , C25D21/02 , H05K3/423
摘要： A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.
摘要翻译：公开了一种在电子基板上镀铜导体的方法和形成的器件。在该方法中，首先提供填充有保持在约0℃至约18℃之间的温度的电镀溶液的电镀铜浴。然后将浸在电镀溶液中的电子基板上的铜层以单步骤或双步沉积工艺进行镀覆。双步沉积方法更适合于在具有大纵横比的特征中沉积铜导体，例如双镶嵌结构中的通孔，其直径/深度的纵横比大于1/3或高达{分数（ 1/10）}。各种电镀参数用于在单步沉积或双步沉积工艺中提供短电阻瞬变。这些参数包括浴温度，浴液搅拌，镀浴中的添加剂浓度，所用的电镀电流密度，铜膜的沉积速率和沉积的铜膜的总厚度。

22. 发明授权

US06251251B1 Anode design for semiconductor deposition 失效
标题翻译：用于半导体沉积的阳极设计
公开(公告)号：US06251251B1
公开(公告)日：2001-06-26
申请号：US09192431
申请日：1998-11-16
申请人： Cyprian E. Uzoh , Panayotis C. Andricacos , John Owen Dukovic , Robert P. Westerfield, Jr.
发明人： Cyprian E. Uzoh , Panayotis C. Andricacos , John Owen Dukovic , Robert P. Westerfield, Jr.
IPC分类号： C25D2118
CPC分类号： C25D7/12 , C25D17/001 , C25D17/12
摘要： An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.
摘要翻译：包括穿孔阳极的阳极组件。穿孔阳极支架固定阳极。阳极保持器至少在底壁中具有穿孔，使得电镀溶液可以流过阳极保持器中的穿孔和阳极中的穿孔。阳极隔离器分离阳极和阴极。阳极隔离器包括至少一个曲线表面。

23. 发明授权

US06235406B1 Copper film including laminated impurities 失效
标题翻译：铜膜包括层压杂质
公开(公告)号：US06235406B1
公开(公告)日：2001-05-22
申请号：US09615464
申请日：2000-07-13
申请人： Cyprian E. Uzoh
发明人： Cyprian E. Uzoh
IPC分类号： B32B1520
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/32134 , H01L21/76838 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76855 , H01L21/76858 , H01L21/76861 , H01L21/76867 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L2221/1089 , Y10T428/12528 , Y10T428/12583 , Y10T428/1259 , Y10T428/1291
摘要： A structure for enhancing electromigration resistance within a copper film includes impurities laminated within the film and other additives incorporated in the film to form intermetallic compounds. Metal grain boundary growth and metal surface mobility is suppressed within the composite copper film. The present invention provides an alloy seed layer and laminated impurities and provides indium, tin, titanium, their compounds with oxygen, and their complexes with oxygen, carbon, and sulfur, incorporated into other films. Intermetallics are disposed at grain boundaries and reduce copper atom mobility. A further aspect of the present invention is a barrier layer formed by combining additives included in an alloy seed layer with materials otherwise unsuitable for barrier material functions.
摘要翻译：用于提高铜膜内的电迁移阻力的结构包括层压在膜内的杂质和掺入膜中的其它添加剂以形成金属间化合物。在复合铜膜内抑制金属晶界生长和金属表面迁移率。本发明提供合金种子层和层合杂质，并将铟，锡，钛，它们的化合物与氧，以及它们与氧，碳和硫的络合物，并入其它膜中。金属间化合物处于晶界并降低铜原子的迁移率。本发明的另一方面是通过将包含在合金种子层中的添加剂与其它不适合于阻挡材料功能的材料组合而形成的阻挡层。

24. 发明授权

US6071388A Electroplating workpiece fixture having liquid gap spacer 失效
标题翻译：具有液隙间隔件的电镀工件夹具
公开(公告)号：US6071388A
公开(公告)日：2000-06-06
申请号：US86693
申请日：1998-05-29
申请人： Cyprian E. Uzoh
发明人： Cyprian E. Uzoh
IPC分类号： C25D7/12 , H01L21/288 , C25D17/04
CPC分类号： C25D7/12 , C25D17/001 , C25D17/06 , H01L21/2885
摘要： A fixture for supporting a workpiece during electroplating of a metal upon the workpiece in a conductive electroplating bath includes a non-conductive frame member for receiving the workpiece therein. The fixture further includes a current distribution means having a plurality of contacts. The plurality of contacts is disposed inwardly for providing an equally distributed electrical contact with an outer perimeter region of the workpiece. The workpiece is supported between the frame member and the current distribution means. Lastly, a thief electrode is perimetrically disposed about the workpiece and spaced a prescribed distance from the workpiece by a gap region. During plating of a metal upon the workpiece, the gap region between the thief and the workpiece is filled with the conductive electroplating bath. An electroplating apparatus having a fixture for supporting a workpiece during an electroplating process and a method of supporting the workpiece to be electroplated are also disclosed.
摘要翻译：用于在导电电镀浴中将金属电镀在工件上时用于支撑工件的夹具包括用于在其中接收工件的非导电框架构件。固定装置还包括具有多个触点的电流分配装置。多个触点被向内设置以提供与工件的外周区域的均匀分布的电接触。工件被支撑在框架构件和电流分布装置之间。最后，窃电电极围绕工件周边设置，并且通过间隙区域与工件隔开规定的距离。在工件上镀金属时，用导电电镀槽填充小偷和工件之间的间隙区域。还公开了一种具有用于在电镀工艺期间支撑工件的固定装置的电镀装置和一种支撑待电镀工件的方法。

25. 发明授权

US5933753A Open-bottomed via liner structure and method for fabricating same 失效
标题翻译：通过衬管结构开口底部及其制造方法
公开(公告)号：US5933753A
公开(公告)日：1999-08-03
申请号：US767572
申请日：1996-12-16
申请人： Andrew H. Simon , Cyprian E. Uzoh
发明人： Andrew H. Simon , Cyprian E. Uzoh
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76865 , H01L21/76873 , H01L2924/0002
摘要： This invention relates to a method of forming a bottomless liner structure. The method involves the steps of first obtaining a material having a via. Next, a first layer is deposited on the material, the first layer covering the sidewalls and bottom of the via. Finally, a second layer is sputter deposited on the first material, the material Rf biased during at least a portion of the time that the second layer is sputter deposited, such that the first layer deposited on the bottom of the via is substantially removed and substantially all of the first layer deposited on the sidewalls of the via is unaffected.
摘要翻译：本发明涉及一种形成无底衬管结构的方法。该方法包括首先获得具有通孔的材料的步骤。接下来，第一层沉积在材料上，第一层覆盖通孔的侧壁和底部。最后，第二层被溅射沉积在第一材料上，材料Rf在第二层被溅射沉积的至少一部分时间内偏置，使得沉积在通孔底部上的第一层被基本上去除并且基本上被除去沉积在通孔侧壁上的所有第一层都不受影响。

26. 发明授权

US07704880B1 Method of forming contact layers on substrates 有权
标题翻译：在基片上形成接触层的方法
公开(公告)号：US07704880B1
公开(公告)日：2010-04-27
申请号：US12190082
申请日：2008-08-12
申请人： Cyprian E. Uzoh , Bulent M. Basol , Hung-Ming Wang , Homayoun Talieh
发明人： Cyprian E. Uzoh , Bulent M. Basol , Hung-Ming Wang , Homayoun Talieh
IPC分类号： H01L21/44
CPC分类号： H01L21/2885 , C25D5/02 , C25D7/123 , C25D17/005
摘要： A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.
摘要翻译：提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。该方法包括在表面上形成导电层。导电层的预定区域被接触层选择性地涂覆，使得当在导电层上进行电处理时，接触构件接触接触层。

27. 发明授权

US07503830B2 Apparatus for reduction of defects in wet processed layers 有权
标题翻译：用于减少湿处理层中的缺陷的装置
公开(公告)号：US07503830B2
公开(公告)日：2009-03-17
申请号：US11704631
申请日：2007-02-09
申请人： Bulent M. Basol , Cyprian E. Uzoh
发明人： Bulent M. Basol , Cyprian E. Uzoh
IPC分类号： B24B49/00
CPC分类号： B24B57/02 , B24B37/042 , C23C18/1617 , C23C18/38 , C25D7/123 , C25D21/04 , C25D21/18 , H01L21/2885
摘要： The present invention provides an apparatus for wet processing of a conductive layer using a degassed process solution such as a degassed electrochemical deposition solution, a degassed electrochemical polishing solution, a degassed deposition solution, and a degassed cleaning solution. The technique includes degassing the process solution before delivering the degassed process solution to a processing unit or degassing the process solution in situ, within the processing unit.
摘要翻译：本发明提供一种使用脱气的电解沉积溶液，脱气电化学抛光溶液，脱气沉积溶液和脱气清洗溶液等脱气工艺溶液对导电层进行湿法加工的设备。该技术包括在将脱气的处理溶液递送到处理单元之前对处理溶液进行脱气或在处理单元内原位脱气处理溶液。

28. 发明授权

US07238092B2 Low-force electrochemical mechanical processing method and apparatus 有权
标题翻译：低力电化学机械加工方法及装置
公开(公告)号：US07238092B2
公开(公告)日：2007-07-03
申请号：US10155828
申请日：2002-05-23
申请人： Bulent M. Basol , Cyprian E. Uzoh , Jeffrey A. Bogart
发明人： Bulent M. Basol , Cyprian E. Uzoh , Jeffrey A. Bogart
IPC分类号： B24B7/04 , B23H7/26 , C25F3/30
CPC分类号： B24B37/26 , B23H5/08 , B24B37/046 , B24B37/22 , B24B49/16 , C25D5/22 , C25D7/123
摘要： The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and apply a uniform and global force to the workpiece surface.
摘要翻译：本发明涉及半导体集成电路技术，并且公开了一种用于将施加的力均匀地分布到工件表面的电化学机械处理系统。该系统包括用于定位或保持工件表面的工件载体和工件表面影响装置（WSID）。 WSID用于将施加的力均匀地分布到工件表面，并且包括用于处理并向工件表面施加均匀且全局的力的各种层。

29. 发明授权

US07195696B2 Electrode assembly for electrochemical processing of workpiece 有权
标题翻译：工件电化学处理用电极组件
公开(公告)号：US07195696B2
公开(公告)日：2007-03-27
申请号：US10723045
申请日：2003-11-26
申请人： Cyprian E. Uzoh , Bulent M. Basol
发明人： Cyprian E. Uzoh , Bulent M. Basol
IPC分类号： C25D17/00 , B05C11/00
CPC分类号： H01L21/2885 , C25D5/08 , C25D7/12 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/76877
摘要： The present invention provides a novel system, apparatus, and method to deposit conductive films on a workpiece. A system for electroplating a surface of a workpiece using a process solution is disclosed. The system comprises a solution housing configured to house an electrode and to contain the process solution, a filter element disposed in the solution housing configured to partition the solution housing into a lower chamber and an upper chamber, and an upper inlet port coupled to the solution housing configured to deliver the process solution to the upper chamber of the solution housing to fill the upper chamber and the lower chamber immersing the electrode in the lower chamber.
摘要翻译：本发明提供了一种在工件上沉积导电膜的新型系统，装置和方法。公开了一种使用工艺溶液对工件的表面进行电镀的系统。该系统包括配置成容纳电极并容纳处理溶液的溶液壳体，设置在溶液壳体中的过滤元件，其配置成将溶液壳体分隔成下腔室和上腔室，以及连接到溶液的上入口端口壳体，被配置为将处理溶液输送到溶液壳体的上腔室以填充上室，下室将电极浸入下室中。

30. 发明授权

US06867136B2 Method for electrochemically processing a workpiece 失效
标题翻译：电化学处理工件的方法
公开(公告)号：US06867136B2
公开(公告)日：2005-03-15
申请号：US10201606
申请日：2002-07-22
申请人： Bulent M. Basol , Homayoun Talieh , Cyprian E. Uzoh
发明人： Bulent M. Basol , Homayoun Talieh , Cyprian E. Uzoh
IPC分类号： B23H5/08 , C25D5/02 , C25D5/06 , C25D5/10 , C25D5/18 , C25D5/22 , C25D5/48 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L21/44
CPC分类号： B23H5/08 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.
摘要翻译：本发明涉及使用ECMPR技术在工件表面上形成诸如铜的导电材料的近平面或平面层的方法。该方法优选使用至少两个单独的电镀溶液化学物质，以在其表面上具有特征或空腔的半导体衬底上形成近平面或平面的铜层。

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