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    • 26. 发明申请
    • High voltage semiconductor devices and methods for fabricating the same
    • 高压半导体器件及其制造方法
    • US20070181941A1
    • 2007-08-09
    • US11351154
    • 2006-02-09
    • Yi-Chun LinKuo-Ming WuRuey-Hsin Liu
    • Yi-Chun LinKuo-Ming WuRuey-Hsin Liu
    • H01L29/76H01L21/336
    • H01L29/7816H01L29/42368H01L29/66681
    • High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.
    • 提供了高压半导体器件及其制造方法。 能够进行高压操作的半导体器件的示例性实施例,包括其中形成有第一阱的衬底。 形成覆盖在衬底上的栅叠层,包括形成在其上的栅介质层和栅电极。 在第一井的部分中形成通道井和第二井。 源区域形成在通道井的一部分中。 漏极区域形成在第二阱的一部分中,其中栅极电介质层包括邻近源极区域的栅极堆叠的一端处的相对较薄的部分,以及邻近栅极堆叠的一端的相对较厚的部分, 直接接触漏区。