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21. 发明申请

US20070184568A1 Method of manufacturing gallium nitride based light emitting diode 审中-公开
标题翻译：制造氮化镓基发光二极管的方法
公开(公告)号：US20070184568A1
公开(公告)日：2007-08-09
申请号：US11646406
申请日：2006-12-28
申请人： Dae Yeon Kim , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
发明人： Dae Yeon Kim , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/44
摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.
摘要翻译：提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

22. 发明授权

US08178378B2 Method of manufacturing vertical nitride semiconductor light emitting diode 有权
标题翻译：立式氮化物半导体发光二极管的制造方法
公开(公告)号：US08178378B2
公开(公告)日：2012-05-15
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

23. 发明申请

US20120056150A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN 审中-公开
标题翻译：具有电极图案的氮化物半导体发光器件
公开(公告)号：US20120056150A1
公开(公告)日：2012-03-08
申请号：US13292774
申请日：2011-11-09
申请人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
发明人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
IPC分类号： H01L33/04
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.
摘要翻译：提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

24. 发明授权

US07964877B2 Polarized semiconductor light emitting device with light guiding portions formed within 有权
标题翻译：具有形成在其内的导光部分的偏振半导体发光器件
公开(公告)号：US07964877B2
公开(公告)日：2011-06-21
申请号：US11822186
申请日：2007-07-03
申请人： Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
发明人： Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , G02F1/13362 , H01L33/08 , H01L33/20
摘要： A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.
摘要翻译：偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

25. 发明授权

US07838317B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US07838317B2
公开(公告)日：2010-11-23
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

26. 发明申请

US20090159909A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN 审中-公开
标题翻译：具有电极图案的氮化物半导体发光器件
公开(公告)号：US20090159909A1
公开(公告)日：2009-06-25
申请号：US12252660
申请日：2008-10-16
申请人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
发明人： Jin Bock LEE , Dong Woohn Kim , Sang Ho Yoon , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.
摘要翻译：提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

27. 发明申请

US20080012028A1 Polarized semiconductor light emitting device 有权
标题翻译：极化半导体发光器件
公开(公告)号：US20080012028A1
公开(公告)日：2008-01-17
申请号：US11822186
申请日：2007-07-03
申请人： Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
发明人： Sang Ho Yoon , Su Yeol Lee , Dae Yeon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , G02F1/13362 , H01L33/08 , H01L33/20
摘要： A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.
摘要翻译：偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

28. 发明授权

US06718478B2 Circuit for generating a start pulse signal for a source driver IC in TFT-LCD on detecting a leading edge of a data enable 有权
标题翻译：用于在检测数据使能的前沿时产生TFT-LCD中的源极驱动器IC的起始脉冲信号的电路
公开(公告)号：US06718478B2
公开(公告)日：2004-04-06
申请号：US09740453
申请日：2000-12-19
申请人： Sang Ho Yoon , Jin Young Jeong , Yong Il Kim
发明人： Sang Ho Yoon , Jin Young Jeong , Yong Il Kim
IPC分类号： G06F104
CPC分类号： G09G3/3611 , G09G5/18
摘要： A circuit for generating a start pulse signal for a source driver IC in a TFT-LCD includes: a first latch unit for receiving a data enable signal and a reset signal, extracting a leading edge of the data enable signal in a leading edge of a main clock signal, and latching the data enable signal in a trailing edge thereof; a logic gate unit for receiving a complementary signal of the output signal from the first latch unit and the data enable signal, and generating a pulse signal in a leading edge of the data enable signal; and a second latch unit for receiving the output signal from the logic gate unit and the reset signal, outputting the output signal from the logic gate unit as a start pulse signal in the leading edge of the main clock signal, and latching the output signal from the logic gate unit in the trailing edge thereof.
摘要翻译：用于在TFT-LCD中产生源极驱动器IC的起始脉冲信号的电路包括：用于接收数据使能信号和复位信号的第一锁存单元，提取数据使能信号的前沿，主时钟信号，并在其后沿锁存数据使能信号; 逻辑门单元，用于接收来自第一锁存单元的输出信号和数据使能信号的互补信号，并在数据使能信号的前沿产生脉冲信号; 以及第二锁存单元，用于接收来自逻辑门单元和复位信号的输出信号，将来自逻辑门单元的输出信号作为主时钟信号的前沿中的起始脉冲信号输出，并将来自其后缘的逻辑门单元。

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