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    • 21. 发明申请
    • Transducer for generating and measuring torsional waves, and apparatus and method for structural diagnosis using the same
    • 用于产生和测量扭转波的传感器,以及使用其的结构诊断的装置和方法
    • US20050179430A1
    • 2005-08-18
    • US10958590
    • 2004-10-06
    • Chan ParkSeung ChoSoon HanYoon Kim
    • Chan ParkSeung ChoSoon HanYoon Kim
    • B06B1/08G01N27/82
    • G01N27/82B06B1/08
    • The present invention relates to a method and an apparatus for structural diagnosis, which generates torsional waves upon a shaft, beam or pipe having arbitrary cross-sections, such as a circular cross-section, and senses existence or location of the cracks through analyzing reflected waves. The present invention provides a magnetostrictive transducer comprising a plurality of ferromagnetic strips attached, around circumference of a member having an arbitrary cross-section with a fixed inclination; a first housing disposed to surround the ferromagnetic strips, the first housing being made of insulating material; and a coil wound around the first housing. The magnetostrictive transducer according to the present invention can generate torsional waves upon a member when a current is supplied to the coil, and can measure reflected torsional waves. Further, the present invention provides an apparatus and a method for structural diagnosis using the magnetostrictive transducer.
    • 本发明涉及一种用于结构诊断的方法和装置,其在具有任意横截面(例如圆形横截面)的轴,梁或管上产生扭转波,并通过分析反射来感测裂纹的存在或位置 波浪。 本发明提供一种磁致伸缩换能器,其包括多个铁磁条,其附接有具有固定倾斜度的任意横截面的构件的周围; 设置成围绕所述铁磁条的第一壳体,所述第一壳体由绝缘材料制成; 以及卷绕在第一壳体周围的线圈。 根据本发明的磁致伸缩换能器,当电流被提供给线圈时,可以在构件上产生扭转波,并且可以测量反射的扭转波。 此外,本发明提供一种使用磁致伸缩换能器进行结构诊断的装置和方法。
    • 22. 发明申请
    • Media access controller
    • 媒体访问控制器
    • US20050141544A1
    • 2005-06-30
    • US10861613
    • 2004-06-04
    • Chan ParkDae HwangBong Kim
    • Chan ParkDae HwangBong Kim
    • H04L12/28H04L12/413
    • H04L12/413
    • The present invention relates to a media access controller, and more particularly, to a media access controller which can adjust operational parameters according to a setting environment of a packet transmission system by re-setting the operational parameters of the media access controller by an external source. A media access controller (MAC) according to an aspect of the present invention comprises: a carrier analyzer, which generates a timeslot using a carrier sense signal input from a modem of a station and outputs a type and a timeslot of a received frame; a collision resolution handler, which grants medium access by monitoring for collisions between stations and between itself and another station using a collision resolution algorithm; a random number generator, which generates a random number (RndNum) based on a MAC address value when a collision between itself and another station occurs; a transmission on generator, which receives a transmission ready (TxReady) signal and a timeslot to be transmitted from a frame controller of the system and generates a data transmission on (TxDataOn) signal and a transmission frame type (TxSigType) signal; and a parameter setting unit, which adjusts operational parameters of the MAC to be suitable for a setting environment of the station.
    • 本发明涉及一种媒体接入控制器,更具体地说,涉及一种媒体接入控制器,其可以根据分组传输系统的设置环境通过外部源重新设置媒体接入控制器的操作参数来调整操作参数 。 根据本发明的一个方面的媒体接入控制器(MAC)包括:载波分析器,其使用从站的调制解调器输入的载波侦听信号产生时隙,并输出接收帧的类型和时隙; 冲突解决处理器,其通过使用冲突解决算法监视站之间和本身与另一站之间的冲突来授予介质访问; 随机数生成器,当其本身与另一个站之间的冲突发生时,基于MAC地址值生成随机数(RndNum); 发送器,其接收从系统的帧控制器发送的传输就绪(TxReady)信号和时隙,并生成(TxDataOn)信号和传输帧类型(TxSigType)信号的数据传输; 以及参数设定单元,其对MAC的操作参数进行调整以适合于该站的设定环境。
    • 27. 发明申请
    • Methods of manufacturing image sensors having shielding members
    • 制造具有屏蔽部件的图像传感器的方法
    • US20100062559A1
    • 2010-03-11
    • US12585349
    • 2009-09-11
    • Jin-Hyeong ParkTaek-Soo KimChan ParkJong-Cheol ShinYoung-Hyun Lee
    • Jin-Hyeong ParkTaek-Soo KimChan ParkJong-Cheol ShinYoung-Hyun Lee
    • H01L31/18
    • H01L27/14623H01L27/14621H01L27/14627H01L27/1464H01L27/14643H01L27/14689H01L27/14698
    • An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.
    • 可以在具有第一区域和第二区域的基板上形成外延层。 可以在衬底的第一区域中的外延层的第一部分上形成光电二极管。 可以在与光电二极管相邻的外延层上形成至少一个传输晶体管。 多个晶体管可以形成在第二区域中的外延层的第二部分上。 可以形成绝缘层以覆盖光电二极管,至少一个传输晶体管和多个晶体管。 可以通过绝缘层形成多个连接,以与第二区域中的至少一个传输晶体管和多个晶体管电连接。 可以形成屏蔽构件以暴露光电二极管。 在形成屏蔽构件之前,可以用氢等离子体处理外延层和/或衬底以除去硅 - 氧和/或硅 - 硅的悬挂键。
    • 29. 发明授权
    • High throughput continuous pulsed laser deposition process
    • 高通量连续脉冲激光沉积工艺
    • US07501145B2
    • 2009-03-10
    • US11554428
    • 2006-10-30
    • Venkat SelvamanickamYijie LiChan Park
    • Venkat SelvamanickamYijie LiChan Park
    • B05D5/12
    • C23C14/087C23C14/28C23C14/562H01L39/2448
    • A method includes feeding an uncoated substrate from a payout spool into a multi-chambered vacuum apparatus. The vacuum apparatus includes a plurality of deposition chambers defining an extended deposition zone, a multi-zone substrate heater located within the extended deposition zone, and multiple high-temperature superconductor (HTS) targets located within and being arranged linearly along the extended deposition zone. The multiple HTS targets include a first and second HTS target. The first and second HTS targets include a HTS material. The method farther includes translating the uncoated substrate along a translation path through the plurality of deposition chambers, impinging multiple laser beams simultaneously upon the multiple HTS targets and forming multiple overlapping plumes of HTS material within the extended deposition zone, depositing HTS material on a first major surface of the uncoated substrate to provide a coated substrate, and winding the coated substrate onto a take-up spool.
    • 一种方法包括将未涂覆的基材从支付卷轴进料到多室真空装置中。 真空装置包括限定扩展沉积区的多个沉积室,位于扩展沉积区内的多区衬底加热器,以及位于延伸沉积区内并且沿延伸沉积区线性布置的多个高温超导体(HTS)靶。 多个HTS目标包括第一个和第二个HTS目标。 第一个和第二个HTS目标包括HTS材料。 所述方法还包括沿着平移路径平移未涂覆的基底通过多个沉积室,同时在多个HTS靶上冲击多个激光束并在扩展沉积区内形成多个重叠的HTS材料的羽流,将HTS材料沉积在第一主体上 未涂覆的基底的表面以提供涂覆的基底,并将涂覆的基底卷绕到卷取卷轴上。
    • 30. 发明授权
    • Image sensors for reducing dark current and methods of fabricating the same
    • 用于减少暗电流的图像传感器及其制造方法
    • US07271430B2
    • 2007-09-18
    • US11143783
    • 2005-06-03
    • Chan ParkJong-cheol Shin
    • Chan ParkJong-cheol Shin
    • H01L27/148
    • H01L27/14609H01L27/14603H01L27/14683H01L27/14689H01L31/035281
    • An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
    • 图像传感器包括第一导电类型的半导体衬底,位于衬底中的第二导电类型的光电二极管,位于光电二极管上方的第一导电类型的空穴累积装置(HAD)区域,形成在 HAD区域的表面,以及位于邻近于HAD区域的衬底表面上的传输门。 图像传感器还包括第一导电类型的第一沟道区域,位于衬底中并对准传输栅极下方,第二导电类型的第二沟道区位于衬底之间,位于所述传输门和第一沟道区之间, 浮动扩散区,其位于衬底中并与第二沟道区电接触。