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    • 22. 发明授权
    • Method for the preparation of thin large-area single crystals of
diacetylenes and polydiacetylenes
    • 制备二乙炔和聚二乙炔的薄大面积单晶的方法
    • US4684434A
    • 1987-08-04
    • US705587
    • 1985-02-26
    • Mrinal K. ThakurSukant K. TripathyDaniel J. Sandman
    • Mrinal K. ThakurSukant K. TripathyDaniel J. Sandman
    • C30B7/00
    • C30B7/00C30B29/54C30B29/58C30B7/005Y10S117/919
    • A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula:R--CX.tbd.C--C.tbd.C--R'wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation, is provided. The method involves forming a liquid layer containing pure diacetylene monomer between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; and crystallizing the liquid layer disposed between the two opposed surfaces while the liquid layer is kept under constant pressure to form thin large-area single crystals of pure diacetylene monomer.A method for preparing thin large-area single crystals of polydiacetylene is also provided. The method involves forming a liquid layer containing diacetylene monomer represented by the formula:R--C.tbd.C--C.tbd.C--R'wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation in pure form between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; crystallizing the liquid layer disposed between the two opposed surfaces while the liquid layer is kept under constant pressure to form thin large-area single crystals of pure diacetylene monomer; and exposing a surface of the thin large-area single crystal of diacetylene monomer to ultraviolet or gamma radiation to form thin large-area single crystals of polydiacetylene.
    • 制备由下列通式表示的双乙炔单体的薄的大面积单晶的方法:R-CX 3BOND CC 3BOND CR'其中R和R'是选择的侧基,使得乙炔单体可通过1,4-加成固体 提供了暴露于光化辐射的状态反应。 该方法包括在两个相对的表面之间形成含有纯双乙炔单体的液体层; 对设置在两个相对表面之间的液体层施加压力; 并且在液体层保持恒定压力的同时使设置在两个相对表面之间的液体层结晶,形成纯的乙炔单体的薄的大面积单晶。 还提供了制备聚二乙炔薄的大面积单晶的方法。 该方法包括形成含有由下式表示的乙炔单体的液体层:RC 3BOND CC 3BOND CR',其中R和R'是选择的侧基,使得双乙炔单体可通过暴露于1,4-加成固相反应而可聚合 在两个相对表面之间的纯粹形式的光化辐射; 对设置在两个相对表面之间的液体层施加压力; 在液体层保持恒定压力的同时使设置在两个相对表面之间的液体层结晶,形成纯的大面积纯双乙炔单体的单晶; 并将该乙炔单体的薄的大面积单晶的表面暴露于紫外线或γ射线以形成多个大面积的聚二乙炔的大面积单晶。