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21. 发明授权

US07004819B2 CMP systems and methods utilizing amine-containing polymers 有权
公开(公告)号：US07004819B2
公开(公告)日：2006-02-28
申请号：US10051241
申请日：2002-01-18
申请人： Kevin J. Moeggenborg , Isaac K. Cherian , Vlasta Brusic
发明人： Kevin J. Moeggenborg , Isaac K. Cherian , Vlasta Brusic
IPC分类号： B24B7/22
CPC分类号： C09G1/02
摘要： The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

22. 发明授权

US06589100B2 Rare earth salt/oxidizer-based CMP method 有权
标题翻译：稀土盐/氧化剂基CMP法
公开(公告)号：US06589100B2
公开(公告)日：2003-07-08
申请号：US09961934
申请日：2001-09-24
申请人： Kevin Moeggenborg , Vlasta Brusic Kaufman , Isaac K. Cherian
发明人： Kevin Moeggenborg , Vlasta Brusic Kaufman , Isaac K. Cherian
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.
摘要翻译：本发明提供了一种使用包括磨料和/或抛光垫，稀土盐，比稀土盐更强的氧化剂的氧化剂的化学机械抛光系统来研磨包含金属层的基材的方法，以及液体载体

23. 发明申请

US20090104851A1 Polishing of sapphire with composite slurries 有权
标题翻译：用复合浆料抛光蓝宝石
公开(公告)号：US20090104851A1
公开(公告)日：2009-04-23
申请号：US12286960
申请日：2008-10-03
申请人： Isaac K. Cherian , Abhaya K. Bakshi
发明人： Isaac K. Cherian , Abhaya K. Bakshi
IPC分类号： B24B7/20 , C09K3/14 , B24B1/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.
摘要翻译：改进的浆料组合物，其包含第一类型的颗粒和分散在水性介质中的第二类型磨料颗粒的混合物，以及用于使用化学机械平面化（CMP）工艺的磨料浆料组合物，特别是用于抛光蓝宝石的磨料浆料组合物。这些磨料浆料组合物包含第一类磨料颗粒的混合物，该磨料颗粒的硬度比待抛光的表面硬，并且第二类磨料颗粒具有比被抛光表面更硬的硬度，特别是碳化硅磨料的混合物颗粒和二氧化硅磨料颗粒分散在水性介质中。

24. 发明授权

US06867140B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06867140B2
公开(公告)日：2005-03-15
申请号：US10353512
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，至少一种具有至少约30:1的第一金属层的抛光选择性的停止化合物：第二层，其至少约30:1 停止化合物是选自包含胺，亚胺，酰胺，酰亚胺及其混合物的化合物的阳离子充氮的含氮化合物，以及抛光垫和/或研磨剂，和（ii）用系统抛光第一金属层直到至少从衬底去除第一金属层的一部分。

25. 发明授权

US06852632B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06852632B2
公开(公告)日：2005-02-08
申请号：US10353542
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
IPC分类号： B24B57/02 , B24D11/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/302 , C09K13/00
CPC分类号： C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，其中所述抛光添加剂选自焦磷酸盐，缩合磷酸盐，膦酸及其盐，胺，氨基醇，酰胺，亚胺，亚氨基酸，腈，亚硝基，硫醇硫酯，硫醚，硫代硫酸，碳硫酸，硫代羧酸，硫代水杨酸及其混合物，以及抛光垫和/或磨料，和（ii）层，直到第一金属层的至少一部分从衬底去除。

26. 发明授权

US06841479B2 Method of reducing in-trench smearing during polishing 失效
标题翻译：减少抛光过程中槽内拖尾的方法
公开(公告)号：US06841479B2
公开(公告)日：2005-01-11
申请号：US10119862
申请日：2002-04-10
申请人： Isaac K. Cherian , Paul M. Feeney , Kevin J. Moeggenborg
发明人： Isaac K. Cherian , Paul M. Feeney , Kevin J. Moeggenborg
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/762 , H01L21/302
CPC分类号： H01L21/76224 , H01L21/31053 , H01L21/31058 , H01L21/3212 , H01L28/91
摘要： The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100° C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100° C. or more for about 30 minutes or longer. When desirable, a layer of additional material can be deposited over the polymeric material such that it forms a layer over the polymeric material in the trench regions and the filling material in the field regions. The substrate is then polished to obtain a substantially planar surface.
摘要翻译：本发明提供一种在抛光过程中减少槽内拖尾的方法。该方法包括提供一种包括第一层的衬底，该第一层包括绝缘材料，第二层包括填充材料，以及多个场和沟槽区域。聚合物材料渗透到基底上，其中聚合物材料填充沟槽区域并覆盖场区域。聚合物材料任选地从场区域移除，随后烘烤基底，使得沟槽区域中的聚合物材料变得凹陷在场区域的绝缘材料之下。然后将衬底经受约100℃或更长的温度约30分钟或更长时间，使得在衬底的抛光期间，与在衬底下方的衬底的抛光相比，沟槽区域中填充材料的污迹减少除了对基板进行约100℃以上的温度约30分钟以上的条件以外，进行相同的条件。当需要时，可以在聚合物材料上沉积一层附加材料，使得其在沟槽区域中的聚合物材料和场区域中的填充材料上形成一层。然后将基底抛光以获得基本平坦的表面。

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