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    • 21. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20070181918A1
    • 2007-08-09
    • US11670605
    • 2007-02-02
    • Osamu WADAHiroaki NakanoHiroshi ItoToshimasa NamekawaAtsushi Nakayama
    • Osamu WADAHiroaki NakanoHiroshi ItoToshimasa NamekawaAtsushi Nakayama
    • H01L29/76
    • H01L29/94H01L23/5223H01L27/0222H01L2924/0002H02M3/073H01L2924/00
    • A semiconductor device has a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain region/source region and a gate electrode of the MOS structure; and a wiring capacitor which has a first comb-shaped wiring that is formed on said MOS capacitor through an interlayer insulating film, is connected to the gate electrode of said MOS capacitor, and has projecting portions projecting like comb teeth and a second comb-shaped wiring that is formed on said MOS capacitor through the interlayer insulating film, is arranged across an inter-line insulating film from the first comb-shaped wiring, is connected to the drain region and source region, and has projecting portions projecting like comb teeth, wherein the projecting portions of the second comb-shaped wiring are arranged alternately with the projecting portions of the first comb-shaped wiring and arranged perpendicularly to a channel direction connecting the drain region and source region of said MOS capacitor.
    • 半导体器件具有其中共同连接漏极区域和MOS结构的源极区域的MOS电容器,并且在共同连接的漏极区域/源极区域和MOS结构的栅极电极之间形成电容; 以及具有通过层间绝缘膜形成在所述MOS电容器上的第一梳状布线的布线电容器连接到所述MOS电容器的栅电极,并且具有突出部分,如梳齿形状突出,第二梳状 通过层间绝缘膜在所述MOS电容器上形成的布线跨越与第一梳状布线的线间绝缘膜布置,连接到漏区和源极区,并且具有突出部分如梳齿突出, 其中,所述第二梳状布线的突出部分与所述第一梳状布线的突出部分交替布置,并且垂直于连接所述MOS电容器的漏极区域和源极区域的沟道方向布置。
    • 22. 发明申请
    • IMAGE PRINTING APPARATUS, IMAGE PRINTING METHOD, PROGRAM FOR AN IMAGE PRINTING METHOD AND RECORDING MEDIUM HAVING PROGRAM OF IMAGE PRINTING METHOD RECORDED THEREON
    • 图像打印装置,图像打印方法,用于图像打印方法的程序和具有记录的图像打印方法的记录介质
    • US20070076178A1
    • 2007-04-05
    • US11536728
    • 2006-09-29
    • Michitada UedaAtsushi Nakayama
    • Michitada UedaAtsushi Nakayama
    • G03B29/00
    • G03B29/00
    • This invention provides an image printing apparatus, an image printing method, a program for an image printing method and a program having a program for an image printing method recorded thereon wherein disagreement in size between a scale and a photograph in scrap booking can be eliminated simply and with certainty. An image printing apparatus for printing an image to be used for scrap booking, comprising an image data acquisition section, a template retaining section, a template selection section, an image display section, an operation section and a printing section. Also it is demanded to provide an image printing apparatus, an image printing method, a program for an image printing method and a program having a program for an image printing method recorded thereon wherein otherwise possible deterioration of the finish arising from a line for cutting can be prevented.
    • 本发明提供了一种图像打印装置,图像打印方法,用于图像打印方法的程序和具有记录在其上的图像打印方法的程序的程序,其中可以简单地消除尺度和废料预约中的照片之间的大小不一致 并确定。 一种用于打印用于废料预约的图像的图像打印装置,包括图像数据获取部分,模板保持部分,模板选择部分,图像显示部分,操作部分和打印部分。 还要求提供一种图像打印装置,图像打印方法,用于图像打印方法的程序和具有记录在其上的图像打印方法的程序的程序,否则可能由切割线产生的完成的劣化可以 被阻止
    • 24. 发明申请
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US20060158923A1
    • 2006-07-20
    • US11221943
    • 2005-09-09
    • Toshimasa NamekawaHiroaki NakanoHiroshi ItoAtsushi NakayamaOsamu Wada
    • Toshimasa NamekawaHiroaki NakanoHiroshi ItoAtsushi NakayamaOsamu Wada
    • G11C11/24
    • G11C5/145G11C17/16G11C17/18
    • A nonvolatile semiconductor memory device includes a storage element which is programmed with information by breaking an insulating film by application of electrical stress to the storage element, a control switch which controls the application of electrical stress to the storage element, and a control circuit which controls conduction/nonconduction of the control switch. The device further includes a power supply circuit including a voltage generation circuit which generates a first voltage to cause the electrical stress in program operation, a sensing circuit which senses that the insulating film is broken down, and a counter circuit which controls the control circuit to interrupt the application of electrical stress to the storage element when a given period of time elapses after the sensing circuit senses that the insulating film is broken down.
    • 一种非易失性半导体存储器件,包括通过对存储元件施加电应力而破坏绝缘膜的信息来编程的存储元件,控制对存储元件施加电应力的控制开关,以及控制电路 导通/非导通控制开关。 该装置还包括电源电路,该电源电路包括产生第一电压以在编程操作中产生电应力的电压产生电路,感测绝缘膜分解的感测电路,以及控制电路控制到 在感测电路感测到绝缘膜破裂之后经过给定的时间段时,中断对存储元件的电应力的施加。
    • 26. 发明授权
    • Semiconductor memory device having replacing defective columns with redundant columns
    • 半导体存储器件具有用冗余列替换有缺陷的列
    • US06459630B2
    • 2002-10-01
    • US09817260
    • 2001-03-27
    • Atsushi NakayamaRyo Haga
    • Atsushi NakayamaRyo Haga
    • G11C700
    • G11C29/848G11C29/24G11C29/785
    • A semiconductor memory device comprises a data line shifting circuit for connecting a plurality of data lines and spare data lines to a plurality of I/O data lines, a plurality of I/O numbering circuits for assigning the I/O data lines shift indicating numbers as locational information, the shift indicating numbers incrementing by one for each start point for data line shifting executed by the data line shifting circuit, a selection circuit for storing the correlationship between defective column addresses and the shift indicating numbers and outputting a selection signal corresponding to the shift indicating numbers when a defective-column address is input, a shift control circuit for comparing the selection signal with the shift indicating numbers and outputting a shift control signal to the data line shifting circuit based on a result of the comparison, and a number setting selecting circuit for selectively using a plurality of I/O numbering circuits.
    • 半导体存储器件包括用于将多个数据线和备用数据线连接到多个I / O数据线的数据线移位电路,用于分配指示数字的I / O数据线移位的多个I / O编号电路 作为位置信息,由数据线移位电路执行的用于数据线移位的每个起始点递增1的移位指示数字,用于存储不良列地址与移位指示号码之间的相关性的选择电路,并输出对应于 当输入缺陷列地址时的移位指示数,用于将选择信号与移位指示数进行比较的移位控制电路,并且基于比较结果向数据线移位电路输出移位控制信号,以及数字 设置选择电路,用于选择性地使用多个I / O编号电路。
    • 28. 发明授权
    • Process for preparing a polymer using lithium initiator prepared by in
situ preparation
    • 通过原位制备制备使用锂引发剂的聚合物的方法
    • US5625017A
    • 1997-04-29
    • US531975
    • 1995-09-21
    • Koichi MoritaAtsushi NakayamaYoichi OzawaRyota Fujio
    • Koichi MoritaAtsushi NakayamaYoichi OzawaRyota Fujio
    • C08F2/06C08F4/48C08F36/04C08F4/08
    • C08F36/04
    • A process for preparing a polymer comprises polymerizing a conjugated diene monomer and/or a vinylaromatic hydrocarbon monomer in a hydrocarbon solvent in the presence of or in the absence of a randomizer by using a lithium polymerization initiator which is formed by bringing an organolithium compound and at least one secondary amine compound into contact with each other in the polymerization system in the presence of at least said monomer, wherein the polymerization conversion at the time of contact is less than 5%. The secondary amine is an amine compound having two hydrocarbon groups bonded to N or an imine compound in which an NH group and a saturated or unsaturated cyclic structure group form a cyclic structure. The cyclic structure group comprises a hydrocarbon group as the ring member and may also comprise N or O. The method of production uses the initiator which does not require separate preparation of the initiator, shows excellent reproducibility, allows for the evaluation of accuracy of concentration and realizes high effective initiator concentration. The high molecular weight polymer produced by the method has a narrow molecular weight distribution; is controllable; has a highly reproducible molecular weight and microstructure; exhibits excellent coupling properties based on the living polymerization and provides low hysteresis loss properties.
    • 制备聚合物的方法包括在烃溶剂中,在无规脱硫剂的存在下或在不存在无规化剂的情况下,通过使用通过使有机锂化合物形成的锂聚合引发剂和在有机锂化合物中形成的聚合引发剂来聚合共轭二烯单体和/ 至少一种仲胺化合物在至少所述单体的存在下在聚合体系中彼此接触,其中接触时的聚合转化率小于5%。 仲胺是具有与N键合的两个烃基或其中NH基和饱和或不饱和的环状结构基团形成环状结构的亚胺化合物的胺化合物。 环状结构基包括作为环成员的烃基,也可以包含N或O.生产方法使用不需要分离制备引发剂的引发剂,显示出优异的再现性,允许评价浓度的精确度和 实现高效引发剂浓度。 通过该方法制备的高分子量聚合物具有窄的分子量分布; 是可控的 具有高度可重复的分子量和微观结构; 基于活性聚合表现出优异的偶联性能,并提供低滞后损失性能。