专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07974563B2 Image heating apparatus and pressure roller therein having metal core and two elastic layers with different thermal conductivities 有权
标题翻译：图像加热装置和加压辊，其中具有金属芯和具有不同热导率的两个弹性层
公开(公告)号：US07974563B2
公开(公告)日：2011-07-05
申请号：US12259755
申请日：2008-10-28
申请人： Hiroaki Sakai , Norio Hashimoto , Yuko Sekihara , Kazuo Kishino , Masaaki Takahashi , Katsuhisa Matsunaka , Atsushi Iwasaki , Hiroyuki Sakakibara
发明人： Hiroaki Sakai , Norio Hashimoto , Yuko Sekihara , Kazuo Kishino , Masaaki Takahashi , Katsuhisa Matsunaka , Atsushi Iwasaki , Hiroyuki Sakakibara
IPC分类号： G03G15/20
CPC分类号： G03G15/2053
摘要： A pressure member contacts a heating member to form a nip part where a recording material is heated and pinched-conveyed, and includes a first elastic layer and a second elastic layer 24b having a higher thermal conductivity than that of the first elastic layer. An elastic layer is formed of a combination of the first elastic layer and the second elastic layer so that the thickness of the second elastic layer at the end portion is thicker than the thickness of the second elastic layer at the center portion in a longitudinal direction perpendicular to a recording material conveyance direction. Accordingly, when using the pressure member to contact the heating member to form the nip part, it is possible to reduce the difference between a center nip width and an end-portion nip width of the nip part.
摘要翻译：压力构件与加热构件接触以形成记录材料被加热和夹持输送的辊隙部分，并且包括具有比第一弹性层的导热性更高的导热性的第一弹性层和第二弹性层24b。弹性层由第一弹性层和第二弹性层的组合形成，使得端部处的第二弹性层的厚度比纵向垂直于中心部分的第二弹性层的厚度厚到记录材料输送方向。因此，当使用压力构件接触加热构件以形成夹持部时，可以减小夹持部的中心夹持宽度和端部夹持宽度之间的差。

22. 发明授权

US08717333B2 Electrostatic capacity type touch panel, display device and process for producing electrostatic capacity type touch panel 有权
标题翻译：静电容量型触摸屏，显示装置及静电容量型触摸屏制造工艺
公开(公告)号：US08717333B2
公开(公告)日：2014-05-06
申请号：US13044665
申请日：2011-03-10
申请人： Masao Ozeki , Atsushi Iwasaki
发明人： Masao Ozeki , Atsushi Iwasaki
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F2203/04111 , Y10T29/49002
摘要： An electrostatic capacity type touch panel having on one surface of a transparent substrate, a plurality of columns of column electrodes extending in a first direction and a plurality of columns of column electrodes extending in a second direction intersecting the first direction,such column electrodes extending in the first direction and such column electrodes extending in the second direction being eclectically disconnected from each other by an electrically insulating layer provided at least in a part of each intersection region of the column electrodes, and at least one of the two intersecting column electrodes being electrically connected by a bridge wire provided in the intersection region.
摘要翻译：一种静电电容型触摸屏，其具有在透明基板的一个表面上，沿第一方向延伸的多列列电极和沿与第一方向相交的第二方向延伸的多列列电极，第一方向和沿第二方向延伸的列电极通过至少设置在列电极的每个交叉区域的一部分中的电绝缘层彼此分离地彼此分离，并且两个相交的列电极中的至少一个是电通过设置在交叉路口区域中的桥接线连接。

23. 发明授权

US08083852B2 Single crystal growth method and single crystal pulling apparatus 有权
标题翻译：单晶生长法和单晶拉制装置
公开(公告)号：US08083852B2
公开(公告)日：2011-12-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/06
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

24. 发明申请

US20110146564A1 METHOD FOR DETECTING DIAMETER OF SINGLE CRYSTAL, SINGLE-CRYSTAL MANUFACTURING METHOD BY USING THE SAME AND SINGLE-CRYSTAL MANUFACTURING APPARATUS 有权
标题翻译：用于检测单晶直径，单晶制造方法及其单晶制造装置的方法
公开(公告)号：US20110146564A1
公开(公告)日：2011-06-23
申请号：US13061586
申请日：2009-09-24
申请人： Hiroshi Ohtsuna , Atsushi Iwasaki
发明人： Hiroshi Ohtsuna , Atsushi Iwasaki
IPC分类号： C30B15/26
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.
摘要翻译：一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。结果，直径检测精度提高。

25. 发明申请

US20100274805A9 SEARCH SYSTEM OF COMMUNICATIONS DEVICE 有权
标题翻译：通信设备搜索系统
公开(公告)号：US20100274805A9
公开(公告)日：2010-10-28
申请号：US11721314
申请日：2006-05-12
申请人： Akimichi Tanabe , Motoshi Tamura , Atsushi Iwasaki , Makoto Koushiro
发明人： Akimichi Tanabe , Motoshi Tamura , Atsushi Iwasaki , Makoto Koushiro
IPC分类号： G06F17/30
CPC分类号： H04W4/02 , H04L67/1097 , H04L67/16 , H04L67/18 , H04W8/005 , H04W8/26 , H04W64/00 , H04W68/00 , H04W88/14 , H04W88/16
摘要： A communications system is provided which can search for information about a communications device that is not registered in a network by designating time. The search system, which includes a plurality of communications devices, gateways and an entity management server, can execute a search method. The entity management server stores in a storage device the identification information of the communications device sent from the gateways with establishing correspondence with notification time. The entity management server receives from a mobile terminal the identification information of the communications device and designated time. The entity management server searches for the identification information stored in the storage device at the designated time, and identifies the location information of the gateways corresponding to the identification information included in the search request.
摘要翻译：提供通信系统，其可以通过指定时间来搜索关于未在网络中注册的通信设备的信息。包括多个通信设备，网关和实体管理服务器的搜索系统可以执行搜索方法。实体管理服务器将从网关发送的通信设备的识别信息与通知时间建立对应关系，存储在存储设备中。实体管理服务器从移动终端接收通信设备的识别信息和指定时间。实体管理服务器在指定时间搜索存储在存储设备中的识别信息，并且识别与包括在搜索请求中的识别信息相对应的网关的位置信息。

26. 发明申请

US20100000621A1 Method for repairing flexible tube 有权
标题翻译：柔性管修复方法
公开(公告)号：US20100000621A1
公开(公告)日：2010-01-07
申请号：US12457903
申请日：2009-06-24
申请人： Kouichi Kamata , Atsushi Iwasaki , Daisuke Ayame , Nobuharu Takahashi
发明人： Kouichi Kamata , Atsushi Iwasaki , Daisuke Ayame , Nobuharu Takahashi
IPC分类号： F16L55/16
CPC分类号： B05D5/00 , A61B1/00071 , A61B1/0011 , A61B1/005 , B05D1/42 , B05D7/02 , B05D2254/02 , G02B23/2476
摘要： Around a damaged area of a jacket of a flexible tube, a top coat layer whose adhesion to a polymer layer is weak is peeled off with an adhesive tape. The damaged area and its immediate surrounding area are sanded, and then wiped with ethanol for cleaning. A main agent and a hardening agent are heated and defoamed while being mixed to prepare a repair material. The repair material is applied to the damaged area and the immediate surrounding area. A heat shrink tube is opened along slits in an end portion and covers the flexible tube. The heat shrink tube is shrunk with hot air, pressing the repair material and making it flush with a surface of the jacket. The flexible tube is heated with an electric hot plate to harden the repair material. Thereafter, the heat shrink tube is peeled off from the flexible tube.
摘要翻译：在柔性管的护套的损坏区域周围，用粘合带剥离其对聚合物层的粘附性弱的面涂层。受损区域及其周边地区被打磨，然后用乙醇擦拭清洁。将主剂和硬化剂在混合的同时加热消泡以制备修补材料。修复材料应用于受损区域和周边地区。热收缩管沿着端部的狭缝开口并且覆盖柔性管。热收缩管用热空气收缩，按压修补材料并使其与外套的表面齐平。柔性管用电热板加热，以硬化修补材料。此后，将热收缩管从柔性管上剥离。

27. 发明申请

US20080107081A1 HANDOVER CONTROL APPARATUS, RELAY ROUTER, GATEWAY APPARATUS, ACCESS ROUTER, BASE STATION, MOBILE COMMUNICATION SYSTEM, AND HANDOVER CONTROL METHOD 有权
标题翻译：切换控制装置，继电器路由器，网关设备，访问路由器，基站，移动通信系统和切换控制方法
公开(公告)号：US20080107081A1
公开(公告)日：2008-05-08
申请号：US11963133
申请日：2007-12-21
申请人： Shinichi ISOBE , Ken Igarashi , Atsushi Iwasaki , Kenji Nishimura , Takasi Koshimizu
发明人： Shinichi ISOBE , Ken Igarashi , Atsushi Iwasaki , Kenji Nishimura , Takasi Koshimizu
IPC分类号： H04Q7/00
CPC分类号： H04W36/02 , H04L45/122 , H04W40/36
摘要： A mobile communication system 100 according to the present invention comprises handover control apparatus 1 and radio terminal unit 10. The handover control apparatus 1 controls handover of a radio terminal unit 10 between access routers 31-34 provided in respective base stations 21-24 for radio communication with the radio terminal unit 10. The handover control apparatus 1 counts the number of relay routers for every candidate access router 32-34 for a destination of the radio terminal unit 10, from a gateway device 52 and determines a COR on the basis of the number of relay routers for every access router 32, 33, 34 thus counted.
摘要翻译：根据本发明的移动通信系统100包括切换控制装置1和无线终端单元10。切换控制装置1控制无线终端单元10在设置在各基站21-24中的接入路由器31〜34之间进行无线终端单元10的无线通信的切换。切换控制装置1从网关装置52对每个候选接入路由器32-34的无线终端单元10的目的地的中继路由器的数量进行计数，并且基于每个接入的中继路由器的数量来确定COR 路由器32,33,34由此计数。

28. 发明授权

US6154466A Data transmitting system 失效
标题翻译：数据传输系统
公开(公告)号：US6154466A
公开(公告)日：2000-11-28
申请号：US306063
申请日：1999-05-06
申请人： Atsushi Iwasaki , Tatsuya Kubota , Takayuki Takeda , Youichi Matsumura
发明人： Atsushi Iwasaki , Tatsuya Kubota , Takayuki Takeda , Youichi Matsumura
IPC分类号： H04Q3/00 , H04L12/951 , H04N21/236 , H04N21/2368 , H04N21/2381 , H04N21/434 , H04N21/4363 , H04N21/438 , H04N21/643 , H04J3/22
CPC分类号： H04N21/2381 , H04N21/23602 , H04N21/23614 , H04N21/2368 , H04N21/4341 , H04N21/4342 , H04N21/4348 , H04N21/4363 , H04N21/4381 , H04N21/64307
摘要： A digital video signal is transmitted via a communication system which can transmit digital data through an asynchronous communication line (ATM communication line) or the like and, at the same time, voice information for the working communication and information such as computer information are transmitted by using the communication system. The user of a first data transmitting apparatus sets up the character data etc. for communication on the terminal. The set character data is multiplexed in the predetermined transmission packet together with the audio and video data output from the VTR device and transmitted via an ATM communication line 2 to a second data transmitting apparatus. In the second data transmitting apparatus, the character data is demultiplexed from the transmission packet and displayed on for example the display device of the personal computer. In place of the character information, also voice information can be transmitted by a telephone set. In this way, the users of both data transmitting apparatuses transmit and receive the working communication information by using the communication line for transmitting the digital video signal.
摘要翻译：通过通过异步通信线路（ATM通信线路）等发送数字数据的通信系统发送数字视频信号，同时，通过通信系统，通过通信系统，通过通信系统，通过异步通信线路（ATM通信线路）使用通信系统。第一数据发送装置的用户设置用于在终端上进行通信的字符数据等。所设置的字符数据与从VTR设备输出的音频和视频数据一起被复用在预定的传输分组中，并且经由ATM通信线路2发送到第二数据发送设备。在第二数据发送装置中，字符数据从发送分组被解复用，并且例如显示在个人计算机的显示装置上。代替字符信息，也可以通过电话机发送语音信息。以这种方式，两个数据发送装置的用户通过使用用于发送数字视频信号的通信线路发送和接收工作通信信息。

29. 发明授权

US6136090A Method for producing a silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US6136090A
公开(公告)日：2000-10-24
申请号：US249410
申请日：1999-02-12
申请人： Kenji Araki , Hideo Okamoto , Toshiharu Uesugi , Atsushi Iwasaki
发明人： Kenji Araki , Hideo Okamoto , Toshiharu Uesugi , Atsushi Iwasaki
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B15/18
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068
摘要： A method of producing a single crystal by Czochralski method by contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot, wherein a pulling condition is controlled according to a cumulative time of use of a heater surrounding the crucible. The pulling conditions to be controlled may induce the relative position of the heater and the crucible, the number of rotations of the crucible, the number of rotations of the crystal, or an atmosphere pressure in the furnace and a gas volume of flowing. Also described is a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and a single crystal can be produced stably.
摘要翻译：通过将晶种与坩埚中的熔体接触，然后缓慢拉动以生长单晶锭，通过切克劳斯基法制造单晶的方法，其中根据加热器的累积使用时间来控制拉伸条件围着坩埚。要控制的拉动条件可以引起加热器和坩埚的相对位置，坩埚的旋转数，晶体的旋转数或炉中的气氛压力和流动的气体体积。还描述了通过CZ方法制造硅单晶的方法，其中可以减少晶体中杂质浓度的分散，并且可以稳定地产生单晶。

30. 发明授权

US5394829A Device for pulling silicon single crystal 失效
标题翻译：拉硅单晶器件
公开(公告)号：US5394829A
公开(公告)日：1995-03-07
申请号：US35607
申请日：1993-03-23
申请人： Toshiharu Uesugi , Koji Mizuishi , Atsushi Iwasaki , Tadashi Niwayama , Tetsuhiro Oda
发明人： Toshiharu Uesugi , Koji Mizuishi , Atsushi Iwasaki , Tadashi Niwayama , Tetsuhiro Oda
IPC分类号： C30B15/00 , C30B35/00
CPC分类号： C30B15/00 , Y10T117/1032 , Y10T117/1064 , Y10T117/1068 , Y10T117/1088
摘要： A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.
摘要翻译：构造用于拉制单晶硅的装置，以防止SiO元素沉积在器件内的石墨部件上，防止石墨部件变质，延长器件连续使用的持续时间，以及简化了装置的拆卸和重新组装。该装置通过Czochralski法在惰性气体气氛中拉出硅单晶，该装置通过包括用于容纳熔融硅团2的坩埚1，设置在坩埚1的周边的加热器3，外部构件形成用于容纳坩埚1的拉动室6，设置在拉动室6的上部的惰性气体入口部15和与惰性气体出口部16分离的惰性气体出口部16，惰性气体出口部16在同一上部拉动室6。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式