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    • 21. 发明申请
    • ENDURANCE AWARE ERROR-CORRECTING CODE (ECC) PROTECTION FOR NON-VOLATILE MEMORIES
    • 非易失性存储器的耐久性错误修正代码(ECC)保护
    • US20140095956A1
    • 2014-04-03
    • US13630541
    • 2012-09-28
    • Serkan OzdemirQiong Cai
    • Serkan OzdemirQiong Cai
    • H03M13/29
    • G11C29/42G06F11/1048H03M13/05H03M13/11H03M13/19H03M13/2778
    • Embodiments of the invention relate to endurance-aware ECC protection for memories (e.g., phase change memories). According to one embodiment, a method includes calculating first metadata for data bits and second metadata for ECC bits which protect the data bits and the first metadata. Embodiments can include one or more first metadata bits (for the data bits), and one or more second metadata bits (for the ECC bits). An additional level of ECC protection protects the second metadata. In one embodiment, the wear-reduction modifications applied to the data bits and the ECC bits are different, and can be tailored to the behavior of the bits. According to one embodiment, the endurance-aware ECC protection described herein reduces wear due to accesses to memories while addressing the complications wear-reduction mechanisms introduce to error detection and correction systems.
    • 本发明的实施例涉及用于存储器(例如,相变存储器)的耐力感知ECC保护。 根据一个实施例,一种方法包括为保护数据位和第一元数据的ECC位计算数据位的第一元数据和第二元数据。 实施例可以包括一个或多个第一元数据比特(用于数据比特)和一个或多个第二元数据比特(用于ECC比特)。 额外的ECC保护级别可保护第二个元数据。 在一个实施例中,应用于数据位和ECC位的磨损减小修改是不同的,并且可以针对位的行为进行调整。 根据一个实施例,本文所述的耐力感知ECC保护减少了由于访问存储器而导致的磨损,同时解决了对错误检测和校正系统引入的磨损减少机制的并发症。
    • 24. 发明申请
    • SUB-BLOCK BASED WEAR LEVELING
    • 基于子块的磨损水平
    • US20140189284A1
    • 2014-07-03
    • US13992636
    • 2011-12-23
    • Nevin HyuseinovaQiong Cai
    • Nevin HyuseinovaQiong Cai
    • G06F12/10
    • G06F12/10G06F12/0238G06F12/0292G06F2212/7211G11C16/3495
    • Embodiments of the invention describe an apparatus, system and method for sub-block based wear leveling for memory devices. Embodiments of the invention may receive a write request to a physical memory address including a physical block address and a physical sub-block address. An address remapping table is accessed to translate the physical block address to a memory device block address to locate a plurality of memory device sub-blocks. A plurality of sub-block activity counters are accessed, each sub-block activity counter associated with one of the memory device sub-blocks. One of the plurality of memory device sub-blocks is selected to store write data of the write request based, at least in part, on values of the plurality of sub-block activity counters, and the value of the sub-block activity counter associated with the selected memory device sub-block is updated.
    • 本发明的实施例描述了一种用于存储器件的基于子块的磨损均衡的装置,系统和方法。 本发明的实施例可以接收对包括物理块地址和物理子块地址的物理存储器地址的写入请求。 访问地址重映射表以将物理块地址转换为存储器件块地址以定位多个存储器件子块。 访问多个子块活动计数器,每个子块活动计数器与存储器件子块之一相关联。 多个存储器件子块中的一个被选择为至少部分地基于多个子块活动计数器的值和相关联的子块活动计数器的值来存储写入请求的写入数据 所选择的存储器件子块被更新。