会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • ENDURANCE AWARE ERROR-CORRECTING CODE (ECC) PROTECTION FOR NON-VOLATILE MEMORIES
    • 非易失性存储器的耐久性错误修正代码(ECC)保护
    • US20140095956A1
    • 2014-04-03
    • US13630541
    • 2012-09-28
    • Serkan OzdemirQiong Cai
    • Serkan OzdemirQiong Cai
    • H03M13/29
    • G11C29/42G06F11/1048H03M13/05H03M13/11H03M13/19H03M13/2778
    • Embodiments of the invention relate to endurance-aware ECC protection for memories (e.g., phase change memories). According to one embodiment, a method includes calculating first metadata for data bits and second metadata for ECC bits which protect the data bits and the first metadata. Embodiments can include one or more first metadata bits (for the data bits), and one or more second metadata bits (for the ECC bits). An additional level of ECC protection protects the second metadata. In one embodiment, the wear-reduction modifications applied to the data bits and the ECC bits are different, and can be tailored to the behavior of the bits. According to one embodiment, the endurance-aware ECC protection described herein reduces wear due to accesses to memories while addressing the complications wear-reduction mechanisms introduce to error detection and correction systems.
    • 本发明的实施例涉及用于存储器(例如,相变存储器)的耐力感知ECC保护。 根据一个实施例,一种方法包括为保护数据位和第一元数据的ECC位计算数据位的第一元数据和第二元数据。 实施例可以包括一个或多个第一元数据比特(用于数据比特)和一个或多个第二元数据比特(用于ECC比特)。 额外的ECC保护级别可保护第二个元数据。 在一个实施例中,应用于数据位和ECC位的磨损减小修改是不同的,并且可以针对位的行为进行调整。 根据一个实施例,本文所述的耐力感知ECC保护减少了由于访问存储器而导致的磨损,同时解决了对错误检测和校正系统引入的磨损减少机制的并发症。
    • 7. 发明授权
    • Endurance aware error-correcting code (ECC) protection for non-volatile memories
    • 针对非易失性存储器的耐久性感知纠错码(ECC)保护
    • US08990670B2
    • 2015-03-24
    • US13630541
    • 2012-09-28
    • Serkan OzdemirQiong Cai
    • Serkan OzdemirQiong Cai
    • H03M13/00G06F11/00G11C29/42H03M13/11
    • G11C29/42G06F11/1048H03M13/05H03M13/11H03M13/19H03M13/2778
    • Embodiments of the invention relate to endurance-aware ECC protection for memories (e.g., phase change memories). According to one embodiment, a method includes calculating first metadata for data bits and second metadata for ECC bits which protect the data bits and the first metadata. Embodiments can include one or more first metadata bits (for the data bits), and one or more second metadata bits (for the ECC bits). An additional level of ECC protection protects the second metadata. In one embodiment, the wear-reduction modifications applied to the data bits and the ECC bits are different, and can be tailored to the behavior of the bits. According to one embodiment, the endurance-aware ECC protection described herein reduces wear due to accesses to memories while addressing the complications wear-reduction mechanisms introduce to error detection and correction systems.
    • 本发明的实施例涉及用于存储器(例如,相变存储器)的耐力感知ECC保护。 根据一个实施例,一种方法包括为保护数据位和第一元数据的ECC位计算数据位的第一元数据和第二元数据。 实施例可以包括一个或多个第一元数据比特(用于数据比特)和一个或多个第二元数据比特(用于ECC比特)。 额外的ECC保护级别可保护第二个元数据。 在一个实施例中,应用于数据位和ECC位的磨损减小修改是不同的,并且可以针对位的行为进行调整。 根据一个实施例,本文所述的耐力感知ECC保护减少了由于访问存储器而导致的磨损,同时解决了对错误检测和校正系统引入的磨损减少机制的并发症。
    • 9. 发明申请
    • PAGE MISS HANDLER INCLUDING WEAR LEVELING LOGIC
    • PAGE MISS HANDLER包括磨损级别逻辑
    • US20140201495A1
    • 2014-07-17
    • US13995464
    • 2011-12-23
    • Nevin HyuseinovaQiong Cai
    • Nevin HyuseinovaQiong Cai
    • G06F12/10G06F12/02
    • G06F12/1027G06F12/0246G06F12/1009G06F2212/202G06F2212/7211G11C16/3495
    • Embodiments of the invention describe an apparatus, system and method for utilizing a page miss handler having wear leveling logic/modules for memory devices. Embodiments of the invention may track an amount of writes directed towards cells of a memory device, and determine whether a linear address specified by a system write transaction is included in a translation-lookaside buffer (TLB). In response to determining the linear address is not included in the TLB, resulting in a TLB miss, embodiments of the invention may perform a page table walk to obtain a corresponding physical address, and convert the physical address to a device address for accessing the memory device based the tracked amount of writes. Thus, embodiments of the invention are more efficient compared to prior art solutions, as instead of all memory operations, only those that miss in the TLB incur additional wear leveling address translation overhead.
    • 本发明的实施例描述了一种用于利用具有用于存储器件的磨损均衡逻辑/模块的页面未命中处理器的装置,系统和方法。 本发明的实施例可以跟踪针对存储器设备的单元的写入量,并且确定由系统写入事务指定的线性地址是否包括在翻译后备缓冲器(TLB)中。 响应于确定线性地址不包括在TLB中,导致TLB未命中,本发明的实施例可以执行页表移动以获得对应的物理地址,并将物理地址转换为用于访问存储器的设备地址 设备基于跟踪的写入量。 因此,与现有技术的解决方案相比,本发明的实施例更有效,而不是所有存储器操作,只有那些在TLB中错过的那些才能产生额外的损耗均衡地址转换开销。
    • 10. 发明申请
    • PERSISTENT LOG OPERATIONS FOR NON-VOLATILE MEMORY
    • 不挥发性记录的不间断日志操作
    • US20140095766A1
    • 2014-04-03
    • US13630548
    • 2012-09-28
    • Ferad ZyulkyarovQiong Cai
    • Ferad ZyulkyarovQiong Cai
    • G06F12/02
    • G06F9/467G06F11/141G06F11/1441G06F11/1471G06F11/1474G06F12/0246G06F2212/72
    • In an embodiment, a first delayed persistence operation to store information in a log contained in a non-volatile memory (NVM) may be performed. The information may include, for example, a current value of a variable contained in the NVM. A second delayed persistence operation to store information in the variable may be performed. A third delayed persistence operation to store information in the NVM that indicates the log is cleared may be performed. A flush operation may be performed, for example after the first, second, and third delayed persistence operations. The flush operation may commit information associated with at least one of the first, second, or third delayed persistence operations to the NVM.
    • 在一个实施例中,可以执行用于将信息存储在包含在非易失性存储器(NVM)中的日志中的第一延迟持续操作。 该信息可以包括例如NVM中包含的变量的当前值。 可以执行用于将信息存储在变量中的第二延迟持续操作。 可以执行用于存储指示日志被清除的NVM中的信息的第三延迟持久性操作。 可以执行刷新操作,例如在第一,第二和第三延迟持续操作之后。 刷新操作可以将与第一,第二或第三延迟持久性操作中的至少一个相关联的信息提交给NVM。