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21. 发明申请

US20060076108A1 Method and apparatus for controlling temperature of a substrate 失效
公开(公告)号：US20060076108A1
公开(公告)日：2006-04-13
申请号：US10960874
申请日：2004-10-07
申请人： John Holland , Theodoros Panagopoulos
发明人： John Holland , Theodoros Panagopoulos
IPC分类号： C03C15/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

22. 发明申请

US20060266735A1 Plasma generation and control using dual frequency RF signals 有权
公开(公告)号：US20060266735A1
公开(公告)日：2006-11-30
申请号：US11416468
申请日：2006-05-02
申请人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
发明人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32431
摘要： A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

23. 发明申请

US20130256271A1 METHODS AND APPARATUSES FOR CONTROLLING PLASMA IN A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于控制等离子体处理室中的等离子体的方法和装置
公开(公告)号：US20130256271A1
公开(公告)日：2013-10-03
申请号：US13438824
申请日：2012-04-03
申请人： Theodoros Panagopoulos , John Holland , Alex Paterson
发明人： Theodoros Panagopoulos , John Holland , Alex Paterson
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/3211
摘要： Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil.
摘要翻译：公开了具有至少电感耦合等离子体（ICP）处理室的等离子体处理系统中用于控制等离子体的方法和装置。 ICP室采用至少第一/中心RF线圈，相对于第一/中心RF线圈同心设置的第二/边缘RF线圈，以及RF线圈组，其具有至少相对于第一/中心RF线圈和第二/边缘RF线圈，使得第三/中频RF线圈设置在第一/中心RF线圈和第二/边缘RF线圈之间。在处理期间，在相同方向上的RF电流被提供给第一/中心RF线圈和第二/边缘RF线圈，而RF电流在相反方向（相对于提供给第一/中心RF线圈的电流的方向和第二/边缘RF线圈）提供给第三/中频RF线圈。

24. 发明授权

US08075729B2 Method and apparatus for controlling temperature of a substrate 失效
标题翻译：用于控制基板温度的方法和装置
公开(公告)号：US08075729B2
公开(公告)日：2011-12-13
申请号：US11246012
申请日：2005-10-07
申请人： John Holland , Theodoros Panagopoulos
发明人： John Holland , Theodoros Panagopoulos
IPC分类号： H01L21/68 , C23C16/00
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译：提供了一种用于在处理期间控制基板的温度的基座组件和方法。在一个实施例中，基座组件包括联接到金属基座的静电卡盘。静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。材料层具有至少两个具有不同导热系数的区域。在另一个实施例中，支撑构件是静电卡盘。在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布支持会员

25. 发明授权

US07544251B2 Method and apparatus for controlling temperature of a substrate 失效
标题翻译：用于控制基板温度的方法和装置
公开(公告)号：US07544251B2
公开(公告)日：2009-06-09
申请号：US10960874
申请日：2004-10-07
申请人： John Holland , Theodoros Panagopoulos
发明人： John Holland , Theodoros Panagopoulos
IPC分类号： H01T23/00 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译：提供了一种用于在处理期间控制基板的温度的基座组件和方法。在一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。材料层具有至少两个具有不同导热系数的区域。在另一个实施例中，支撑构件是静电卡盘。在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件与基座之间的热传递，从而控制设置在基座上的基板的温度分布支持会员

26. 发明申请

US20070042603A1 Method for etching having a controlled distribution of process results 有权
标题翻译：具有受控分配处理结果的蚀刻方法
公开(公告)号：US20070042603A1
公开(公告)日：2007-02-22
申请号：US11367004
申请日：2006-03-02
申请人： Thomas Kropewnicki , Theodoros Panagopoulos , Nicolas Gani , Wilfred Pau , Meihua Shen , John Holland
发明人： Thomas Kropewnicki , Theodoros Panagopoulos , Nicolas Gani , Wilfred Pau , Meihua Shen , John Holland
IPC分类号： G01L21/30 , H01L21/302
CPC分类号： H01L21/32137 , H01L22/20
摘要： Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.
摘要翻译：本发明的实施例通常提供蚀刻衬底的方法。在一个实施例中，该方法包括确定对应于衬底上的蚀刻副产物的均匀沉积速率的衬底温度目标分布，优选地调节衬底支撑件的第一部分相对于衬底支撑件的第二部分的温度以获得衬底上的衬底温度目标曲线，并且在优先调节的衬底支撑件上蚀刻衬底。在另一个实施例中，该方法包括在处理室中提供衬底，该处理室具有在处理室内的物质的可选择分布以及具有侧向温度控制的衬底支撑件，其中由衬底支撑件引导的温度曲线和物种分布的选择包括控制参数集，蚀刻第一层材料并使用不同的控制参数集分别蚀刻第二层材料。

27. 发明申请

US20070102118A1 METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE 审中-公开
标题翻译：控制基板温度的方法和装置
公开(公告)号：US20070102118A1
公开(公告)日：2007-05-10
申请号：US11563272
申请日：2006-11-27
申请人： John Holland , Theodoros Panagopoulos
发明人： John Holland , Theodoros Panagopoulos
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译：提供了一种用于在处理期间控制基板的温度的基座组件和方法。在一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。材料层具有至少两个具有不同导热系数的区域。在另一个实施例中，支撑构件是静电卡盘。在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，从而控制设置在基座上的基板的温度分布支持会员

28. 发明申请

US20070006971A1 PLASMA GENERATION AND CONTROL USING A DUAL FREQUENCY RF SOURCE 审中-公开
标题翻译：使用双频RF源的等离子体生成和控制
公开(公告)号：US20070006971A1
公开(公告)日：2007-01-11
申请号：US11531615
申请日：2006-09-13
申请人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译：提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。第二频率与第一频率不等于期望频率的量。在腔室中形成的等离子体的特性以期望的频率建立护套调制。

29. 发明申请

US20100113225A1 COUNTING DEVICE FOR A PUSH-UP EXERCISE 审中-公开
标题翻译：用于推动锻炼的计数装置
公开(公告)号：US20100113225A1
公开(公告)日：2010-05-06
申请号：US12265803
申请日：2008-11-06
申请人： Alden M. Mills , Mark B. Friedman , John Holland , Kevan Hollenback , Stephen G. Hauser
发明人： Alden M. Mills , Mark B. Friedman , John Holland , Kevan Hollenback , Stephen G. Hauser
IPC分类号： A63B24/00 , A63B23/12
CPC分类号： A63B23/1281 , A63B21/4019 , A63B23/1236 , A63B2220/17
摘要： A counting device for counting repetitions and timing a push-up exercise includes a device body and a counter assembly having a display and a plurality of actuation buttons thereon. The counter assembly fits within a deformable foam ring that forms the top of the device. During exercise, a user depresses the foam ring downward with their chest a given distance so as to trigger at least one sensor in the counter assembly to register a repetition count on the display, along with an elapsed time of the exercise. The counter assembly can be fixed within the device, or a display unit thereof may be removable so that the device and display unit are configured for wireless communication.
摘要翻译：用于对重复进行计数和计时的计数装置包括具有显示器的装置主体和计数器组件，以及在其上的多个致动按钮。计数器组件装配在形成装置顶部的可变形泡沫环中。在锻炼过程中，使用者用胸部按压一定距离将泡沫环向下压，以便触发计数器组件中的至少一个传感器，以便在显示器上记录重复计数以及锻炼的经过时间。计数器组件可以固定在设备内，或者其显示单元可以是可移除的，使得设备和显示单元被配置为用于无线通信。

30. 发明申请

US20070173150A1 Body armor with improved knife-stab resistance formed from flexible composites 失效
公开(公告)号：US20070173150A1
公开(公告)日：2007-07-26
申请号：US11037680
申请日：2005-01-18
申请人： Ashok Bhatnagar , Huy Nguyen , John Holland
发明人： Ashok Bhatnagar , Huy Nguyen , John Holland
IPC分类号： B32B27/04 , B32B27/12 , B32B5/02
CPC分类号： F41H5/0478 , B32B5/024 , B32B5/08 , B32B25/08 , B32B25/10 , B32B25/12 , B32B25/14 , B32B25/16 , B32B27/12 , B32B27/306 , B32B2262/0223 , B32B2262/0246 , B32B2262/0253 , B32B2262/0269 , B32B2262/0276 , B32B2262/14 , B32B2270/00 , B32B2307/558 , B32B2307/581 , B32B2571/02 , Y10S428/911 , Y10T442/2615 , Y10T442/2623
摘要： Flexible body armor formed from flexible composites which have improved knife-stab resistance. The body armor is formed from composites which include layers of a fabric base, formed from high tenacity fibers, and a rubber layer bonded to the fabric base. A thermoplastic bonding layer may be used to bond the fabric and rubber layers together. To provide ballistic resistance, the body armor may also include a ballistic resistant composite of a network of high tenacity fibers.

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