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21. 发明授权

US08425987B2 Surface charge enhanced atomic layer deposition of pure metallic films 有权
标题翻译：表面电荷增强纯金属薄膜的原子层沉积
公开(公告)号：US08425987B2
公开(公告)日：2013-04-23
申请号：US12347940
申请日：2008-12-31
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Harsono S. Simka
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/45536 , C23C16/18 , C23C16/44 , C23C16/45525 , C23C16/4581 , C23C16/487
摘要： A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.
摘要翻译：一种方法，包括向腔室中的基板施加电荷; 将有机金属取代基引入室中，有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。一种方法，包括将可移除的电荷施加到基底上; 在所施加的电荷的存在下，将有机金属取代基引入室中，所述有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。一种包括将有机金属取代基引入到室中的方法，包括金属配体和有机配体的有机金属取代基; 以及通过用外部施加的电荷还原有机金属取代基的金属配体来沉积金属膜。

22. 发明授权

US07858525B2 Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill 有权
标题翻译：无氟前体和沉积用于纳米互连种子和填充物的共形导电膜的方法
公开(公告)号：US07858525B2
公开(公告)日：2010-12-28
申请号：US11694677
申请日：2007-03-30
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/32056 , H01L21/76861 , H01L21/76873
摘要： A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.
摘要翻译：一种包括在基材存在下引入无氟有机金属前体的方法; 以及根据原子层或化学气相沉积工艺在所述衬底上形成包括所述有机金属前体的部分的导电层。一种包括通过电介质层形成开口到接触点的方法; 引入无氟铜膜前体和共反应物; 并在开口中形成含铜种子层。一种包括计算机的系统，所述计算机包括电耦合到印刷电路板的微处理器，所述微处理器包括由无氟有机金属前体形成的导电互连结构。

23. 发明授权

US07354849B2 Catalytically enhanced atomic layer deposition process 有权
标题翻译：催化增强原子层沉积过程
公开(公告)号：US07354849B2
公开(公告)日：2008-04-08
申请号：US11365082
申请日：2006-02-28
申请人： John J. Plombon , Adrien R. Lavoie , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka
发明人： John J. Plombon , Adrien R. Lavoie , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45534 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method for carrying out a damascene process to form an interconnect comprises providing a semiconductor substrate having a trench etched into a dielectric layer, wherein the trench includes a barrier layer and an adhesion layer, depositing a copper seed layer onto the adhesion layer using an ALD process, depositing an iodine catalyst layer onto the copper seed layer using an ALD process, and depositing a copper layer onto the copper seed layer using an ALD process. The iodine catalyst layer causes the copper layer to fill the trench by way of a bottom-up fill mechanism. The trench fill is performed using a single ALD process, which minimizes the creation of voids and seams in the final copper interconnect.
摘要翻译：执行镶嵌工艺以形成互连的方法包括提供具有蚀刻到电介质层中的沟槽的半导体衬底，其中所述沟槽包括阻挡层和粘合层，使用ALD将铜籽晶层沉积到粘附层上工艺，使用ALD工艺将碘催化剂层沉积到铜籽晶层上，并使用ALD工艺将铜层沉积到铜籽晶层上。碘催化剂层使铜层通过自下而上的填充机制填充沟槽。使用单个ALD工艺来执行沟槽填充，其最小化最终铜互连中的空隙和接缝的产生。

24. 发明授权

US08222746B2 Noble metal barrier layers 有权
标题翻译：贵金属阻隔层
公开(公告)号：US08222746B2
公开(公告)日：2012-07-17
申请号：US11540386
申请日：2006-09-28
申请人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
发明人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
IPC分类号： H01L23/48
CPC分类号： C23C28/00 , C23C28/021 , C23C28/023 , C23C28/028 , C23C28/321 , C23C28/322 , C23C28/325 , C23C28/34 , C23C28/345
摘要： Noble metal barrier layers are disclosed. In one aspect, an apparatus may include a substrate, a dielectric layer over the substrate, and an interconnect structure within the dielectric layer. The interconnect structure may have a bulk metal and a barrier layer. The barrier layer may be disposed between the bulk metal and the dielectric layer. The barrier layer may include one or more metals selected from iridium, platinum, palladium, rhodium, osmium, gold, silver, rhenium, ruthenium, tungsten, and nickel.
摘要翻译：公开了贵金属阻挡层。在一个方面，一种装置可以包括衬底，在衬底上的电介质层，以及电介质层内的互连结构。互连结构可以具有体金属和阻挡层。阻挡层可以设置在本体金属和电介质层之间。阻挡层可以包括选自铱，铂，钯，铑，锇，金，银，铼，钌，钨和镍中的一种或多种金属。

25. 发明授权

US07982204B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US07982204B2
公开(公告)日：2011-07-19
申请号：US12788603
申请日：2010-05-27
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

26. 发明申请

US20080242880A1 COPPER PRECURSORS FOR CVD/ALD/DIGITAL CVD OF COPPER METAL FILMS 有权
标题翻译：铜金属膜CVD / ALD /数字CVD的铜前驱体
公开(公告)号：US20080242880A1
公开(公告)日：2008-10-02
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
IPC分类号： C07F1/08 , C09D5/00 , C23C16/54
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译：用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。

27. 发明申请

US20080102632A1 Deposition process for iodine-doped ruthenium barrier layers 有权
标题翻译：碘掺杂钌屏障层的沉积工艺
公开(公告)号：US20080102632A1
公开(公告)日：2008-05-01
申请号：US11591792
申请日：2006-11-01
申请人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
发明人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/45529 , C23C18/08 , C23C18/1216 , C23C18/1295 , C23C18/1605 , C23C18/165 , C23C18/1889 , C25D5/02 , C25D7/123 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
摘要翻译：在ALD或CVD工艺中使用新颖的含碘钌前体形成在集成电路内与铜互连一起使用的掺碘钌阻挡层。可以使用的钌前体包括含钌的羰基，芳烃，环戊二烯基和某些其它含钌化合物。钌前体包括碘以催化随后的铜金属沉积并平滑钌层的表面。钌阻挡层的厚度上的碘浓度可以是恒定的或可以分级的。

28. 发明申请

US20100230817A1 Using Unstable Nitrides to Form Semiconductor Structures 有权
标题翻译：使用不稳定氮化物形成半导体结构
公开(公告)号：US20100230817A1
公开(公告)日：2010-09-16
申请号：US12788603
申请日：2010-05-27
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

29. 发明授权

US07749906B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US07749906B2
公开(公告)日：2010-07-06
申请号：US11359060
申请日：2006-02-22
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

30. 发明授权

US07704895B2 Deposition method for high-k dielectric materials 失效
标题翻译：高k电介质材料沉积方法
公开(公告)号：US07704895B2
公开(公告)日：2010-04-27
申请号：US12061584
申请日：2008-04-02
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Mansour Moinpour
IPC分类号： H01L21/473
CPC分类号： H01L21/316 , C23C18/1216 , C23C18/1225 , C23C18/1245
摘要： A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.
摘要翻译：公开了一种在半导体衬底上沉积高k电介质材料的方法。该方法包括将化学浴施加到基底表面上，冲洗表面，向基底表面施加共反应物浴，并漂洗该表面。化学浴包括至少包含铪化合物，铝化合物，钛化合物，锆化合物，钪化合物，钇化合物或镧系元素化合物的金属前体。

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