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21. 发明申请

US20120049233A1 Thermal management system for multiple heat source devices 有权
标题翻译：多个热源设备的热管理系统
公开(公告)号：US20120049233A1
公开(公告)日：2012-03-01
申请号：US12870164
申请日：2010-08-27
申请人： Tsorng-Dih Yuan
发明人： Tsorng-Dih Yuan
IPC分类号： H01L33/64 , H01L33/00
CPC分类号： H01L25/167 , H01L33/54 , H01L33/641 , H01L33/642 , H01L33/648 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： The present disclosure provides systems and methods for forming a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite the first side. A first heat producing element is formed on the first side of the substrate. A second heat producing element is formed on the first side of substrate co-planar with, but not touching the first heat producing element. A heat spreader is coupled to the second side of the substrate using a thermal interface material. The heat spreader includes a first and second vapor chambers. The first vapor chamber is embedded in the heat spreader substantially opposite the first heat producing element. The second vapor chamber is embedded in the heat spreader substantially opposite the second heat producing element. As an example, the first heat producing element may be a light-emitting diode (LED) and the second heat producing element may be a driver circuit for the LED.
摘要翻译：本公开提供了用于形成半导体器件的系统和方法。半导体器件包括具有第一侧和与第一侧相对的第二侧的衬底。第一发热元件形成在基板的第一侧上。第二发热元件形成在与第一发热元件共同但不接触第一发热元件的基板的第一侧上。散热器使用热界面材料耦合到衬底的第二侧。散热器包括第一和第二蒸气室。第一蒸气室与第一发热元件基本上相对地嵌入散热器中。第二蒸气室与第二发热元件大致相对地嵌入散热器中。作为示例，第一发热元件可以是发光二极管（LED），第二发热元件可以是LED的驱动电路。

22. 发明申请

US20080083975A1 STACKED STRUCTURES AND METHODS OF FABRICATING STACKED STRUCTURES 有权
标题翻译：堆叠结构和布置堆叠结构的方法
公开(公告)号：US20080083975A1
公开(公告)日：2008-04-10
申请号：US11539814
申请日：2006-10-09
申请人： Clinton Chao , Tsorng-Dih Yuan , Hsin-Yu Pan , Kim Chen , Mark Shane Peng , Tjandra Winata Karta
发明人： Clinton Chao , Tsorng-Dih Yuan , Hsin-Yu Pan , Kim Chen , Mark Shane Peng , Tjandra Winata Karta
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： H01L25/0657 , H01L24/97 , H01L25/50 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06562 , H01L2225/06565 , H01L2225/06589 , H01L2225/06596 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A stacked structure includes a first die coupled to a first substrate and having a first conductive structure formed through the first die. A second die is mounted over the first die. The second die is coupled to the first substrate by the first conductive structure. At least one first support structure formed from a second substrate is provided over the first substrate, adjacent to at least one of the first die and the second die. A top surface of the first support structure is substantially coplanar with a top surface of at least one of the first and second dies adjacent to the first support structure. The stacked structure further includes a heat spreader mounted over the second die.
摘要翻译：层叠结构包括耦合到第一衬底并具有通过第一裸片形成的第一导电结构的第一管芯。第二模具安装在第一模具上。第二管芯通过第一导电结构耦合到第一衬底。从第二基板形成的至少一个第一支撑结构设置在第一基板上，与第一模具和第二模具中的至少一个相邻。第一支撑结构的顶表面与邻近第一支撑结构的第一和第二模具中的至少一个的顶表面基本共面。层叠结构还包括安装在第二模具上的散热器。

23. 发明授权

US07329600B2 Low dielectric semiconductor device and process for fabricating the same 失效
标题翻译：低介电半导体器件及其制造方法
公开(公告)号：US07329600B2
公开(公告)日：2008-02-12
申请号：US10817179
申请日：2004-04-02
申请人： Lawrence Clevenger , Louis Hsu , Christy S. Tyberg , Tsorng-Dih Yuan
发明人： Lawrence Clevenger , Louis Hsu , Christy S. Tyberg , Tsorng-Dih Yuan
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/76829 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A process for fabricating a low dielectric constant semiconductor comprising the steps of: depositing a first metal layer on a substrate; patterning the first metal layer to produce a patterned first metal wiring; applying a first insulating material onto the patterned first metal wiring to form a support structure; patterning the first insulating material by a contact printing process; depositing a second insulating material of lower dielectric constant onto the support structure; planarizing the second insulating material; depositing a polish-stop film layer over the planarized second insulating material, thereby forming a plurality of metal studs; depositing a second metal layer onto the polish-stop film layer forming interconnects with said studs; and patterning the metal layer to produce a second metal wiring interconnecting to the first wiring via the metal studs.
摘要翻译：一种制造低介电常数半导体的方法，包括以下步骤：在衬底上沉积第一金属层; 图案化第一金属层以产生图案化的第一金属布线; 将第一绝缘材料施加到所述图案化的第一金属布线上以形成支撑结构; 通过接触印刷方法图案化第一绝缘材料; 将较低介电常数的第二绝缘材料沉积到所述支撑结构上; 平面化第二绝缘材料; 在平坦化的第二绝缘材料上沉积抛光停止膜层，从而形成多个金属螺柱; 将第二金属层沉积到所述抛光 - 停止膜层上，形成与所述螺柱的互连; 以及图案化所述金属层以产生经由所述金属螺柱与所述第一布线互连的第二金属布线。

24. 发明申请

US20060286719A1 Semiconductor packages and methods of manufacturing thereof 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US20060286719A1
公开(公告)日：2006-12-21
申请号：US11467053
申请日：2006-08-24
申请人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
发明人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
IPC分类号： H01L21/00
CPC分类号： H01L23/433 , H01L24/31 , H01L2224/16225 , H01L2224/27013 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/13111 , H01L2924/0665 , H01L2224/0401
摘要： Described are semiconductor package devices with improved reliability and methods of manufacturing thereof. In one embodiment, a package device is disclosed that includes a chip having an active surface and a coupling surface opposite the active surface, where the chip has one or more integrated circuits and bumps. The device also includes a thermal spreader thermally coupled to the coupling surface of the chip for dissipating heat generated by the chip, and a thermal interface material located between the thermal spreader and the coupling surface of the chip for improving the heat dissipation. In addition, the device also includes a boundary material located between the thermal spreader and the coupling surface of the chip, where the boundary material is configured to surround a perimeter of the thermal interface material to maintain the thermal interface material between the thermal spreader and the coupling surface of the chip.
摘要翻译：描述了具有改进的可靠性的半导体封装器件及其制造方法。在一个实施例中，公开了一种封装器件，其包括具有有源表面和与有源表面相对的耦合表面的芯片，其中芯片具有一个或多个集成电路和凸块。该装置还包括热耦合到芯片的耦合表面的散热器，用于散发由芯片产生的热量，以及位于散热器和芯片的耦合表面之间的热界面材料，用于改善散热。此外，该装置还包括位于散热器和芯片的耦合表面之间的边界材料，其中边界材料构造成围绕热界面材料的周边，以将热界面材料保持在散热器和耦合表面的芯片。

25. 发明授权

US07135769B2 Semiconductor packages and methods of manufacturing thereof 有权
公开(公告)号：US07135769B2
公开(公告)日：2006-11-14
申请号：US10907327
申请日：2005-03-29
申请人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
发明人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
IPC分类号： H01L23/34
CPC分类号： H01L23/433 , H01L24/31 , H01L2224/16225 , H01L2224/27013 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/13111 , H01L2924/0665 , H01L2224/0401
摘要： Described are semiconductor package devices with improved reliability and methods of manufacturing thereof. In one embodiment, a package device is disclosed that includes a chip having an active surface and a coupling surface opposite the active surface, where the chip has one or more integrated circuits and bumps. The device also includes a thermal spreader thermally coupled to the coupling surface of the chip for dissipating heat generated by the chip, and a thermal interface material located between the thermal spreader and the coupling surface of the chip for improving the heat dissipation. In addition, the device also includes a boundary material located between the thermal spreader and the coupling surface of the chip, where the boundary material is configured to surround a perimeter of the thermal interface material to maintain the thermal interface material between the thermal spreader and the coupling surface of the chip.

26. 发明申请

US20060220225A1 SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US20060220225A1
公开(公告)日：2006-10-05
申请号：US10907327
申请日：2005-03-29
申请人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
发明人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
IPC分类号： H01L23/34
CPC分类号： H01L23/433 , H01L24/31 , H01L2224/16225 , H01L2224/27013 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/13111 , H01L2924/0665 , H01L2224/0401
摘要： Described are semiconductor package devices with improved reliability and methods of manufacturing thereof. In one embodiment, a package device is disclosed that includes a chip having an active surface and a coupling surface opposite the active surface, where the chip has one or more integrated circuits and bumps. The device also includes a thermal spreader thermally coupled to the coupling surface of the chip for dissipating heat generated by the chip, and a thermal interface material located between the thermal spreader and the coupling surface of the chip for improving the heat dissipation. In addition, the device also includes a boundary material located between the thermal spreader and the coupling surface of the chip, where the boundary material is configured to surround a perimeter of the thermal interface material to maintain the thermal interface material between the thermal spreader and the coupling surface of the chip.
摘要翻译：描述了具有改进的可靠性的半导体封装器件及其制造方法。在一个实施例中，公开了一种封装器件，其包括具有有源表面和与有源表面相对的耦合表面的芯片，其中芯片具有一个或多个集成电路和凸块。该装置还包括热耦合到芯片的耦合表面的散热器，用于散发由芯片产生的热量，以及位于散热器和芯片的耦合表面之间的热界面材料，用于改善散热。此外，该装置还包括位于散热器和芯片的耦合表面之间的边界材料，其中边界材料构造成围绕热界面材料的周边，以将热界面材料保持在散热器和耦合表面的芯片。

27. 发明申请

US20060170088A1 Spacer Structures for Semiconductor Package Devices 审中-公开
标题翻译：半导体封装器件的间隔结构
公开(公告)号：US20060170088A1
公开(公告)日：2006-08-03
申请号：US10906055
申请日：2005-02-01
申请人： Hsin-Hui Lee , Mirng-Ji Lii , Chien-Hsiun Lee , Hsin-Yu Pan , Tsorng-Dih Yuan
发明人： Hsin-Hui Lee , Mirng-Ji Lii , Chien-Hsiun Lee , Hsin-Yu Pan , Tsorng-Dih Yuan
IPC分类号： H03H9/00 , H01L23/02
CPC分类号： H01L25/0657 , H01L25/0652 , H01L2224/48145 , H01L2225/06506 , H01L2225/0651 , H01L2225/06575 , H01L2225/06589 , H01L2924/14 , H01L2924/00012
摘要： Disclosed are novel spacer structures for stacked semiconductor package devices. In addition, methods of manufacturing spacers and stacked semiconductor package devices having such spacers are also disclosed. In one embodiment, a spacer includes a first mounting surface couplable to a longitudinal face of a first substrate, where the first mounting surface has a first surface area. The spacer also includes a second mounting surface substantially parallel to the first mounting surface and located on an opposing side of the spacer from the first mounting surface. Furthermore, the second mounting surface is couplable to a longitudinal face of a second substrate and has a second surface area larger than the first surface area.
摘要翻译：公开了用于层叠半导体封装器件的新型间隔结构。此外，还公开了制造间隔物的方法和具有这种间隔物的叠层半导体封装器件。在一个实施例中，间隔件包括可连接到第一基板的纵向面的第一安装表面，其中第一安装表面具有第一表面区域。间隔件还包括基本上平行于第一安装表面并且位于间隔件相对于第一安装表面的相对侧上的第二安装表面。此外，第二安装表面可耦合到第二基板的纵向表面，并且具有大于第一表面区域的第二表面积。

28. 发明授权

US06778393B2 Cooling device with multiple compliant elements 失效
标题翻译：具有多个兼容元件的冷却装置
公开(公告)号：US06778393B2
公开(公告)日：2004-08-17
申请号：US10308225
申请日：2002-12-02
申请人： Gaetano P. Messina , Lawrence S. Mok , Tsorng-Dih Yuan
发明人： Gaetano P. Messina , Lawrence S. Mok , Tsorng-Dih Yuan
IPC分类号： H05K720
CPC分类号： H01L23/4338 , H01L2924/0002 , H01L2924/00
摘要： A cooling device having a common cooling distribution unit with multiple compliant cooling elements. Mechanisms are built in to ensure the cooling elements are in good thermal contact with heat generating semiconductor chips of different heights and sizes on a common carrier. The cooling distribution unit has protection structures to prevent the leakage of coolant from the unit. Further reduction of the risk of accidental coolant leakage is provided with the onboard storage of coolant absorbent materials in the coolant distribution unit. The cooling elements have serpentine coolant channels to enhanced the cooling capacity. The compliance of the cooling elements can also be achieved by using concentric tubing to connect the coolant distribution unit to cooling heads on the cooling elements.
摘要翻译：一种冷却装置，具有具有多个顺应冷却元件的公共冷却分配单元。内置机构以确保冷却元件与公共载体上不同高度和大小的发热半导体芯片良好的热接触。冷却分配单元具有防止冷却液从单元泄漏的保护结构。通过冷却剂吸收材料在冷却剂分配单元中的机载存储来提供意外冷却剂泄漏的风险的进一步降低。冷却元件具有蛇形冷却剂通道，以增强冷却能力。冷却元件的顺应性也可以通过使用同心管将冷却剂分配单元连接到冷却元件上的冷却头来实现。

29. 发明授权

US5276338A Bonded wafer structure having a buried insulation layer 失效
标题翻译：具有掩埋绝缘层的粘合晶片结构
公开(公告)号：US5276338A
公开(公告)日：1994-01-04
申请号：US883082
申请日：1992-05-15
申请人： Klaus Beyer , Chang-Ming Hsieh , Louis L. Hsu , Tsorng-Dih Yuan
发明人： Klaus Beyer , Chang-Ming Hsieh , Louis L. Hsu , Tsorng-Dih Yuan
IPC分类号： H01L21/02 , H01L21/20 , H01L21/76 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76264 , H01L21/2007 , H01L21/76275 , H01L21/76283 , H01L21/76286 , Y10S148/012 , Y10S148/135
摘要： A wafer structure and a method of making the same, upon which semiconductor devices may be formed, comprises first and second wafers. The first wafer comprises a first substrate having a thin oxide layer formed on a bottom surface thereof, the first substrate having a characteristic thermal expansion coefficient. The second wafer comprises a second substrate having an insulation layer formed on a top surface thereof, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate and further having a high thermal conductivity. The second wafer further comprises a thin oxide layer formed on a top surface of the insulation layer, wherein the first thin oxide layer of the first wafer is bonded to the second thin oxide layer of the second wafer.
摘要翻译：可以形成半导体器件的晶片结构及其制造方法包括第一和第二晶片。第一晶片包括在其底表面上形成有薄氧化物层的第一衬底，第一衬底具有特征热膨胀系数。第二晶片包括具有形成在其顶表面上的绝缘层的第二基板，所述绝缘层具有与第一基板的特征热膨胀系数基本匹配并且还具有高导热性的特征热膨胀系数。第二晶片还包括在绝缘层的顶表面上形成的薄氧化物层，其中第一晶片的第一薄氧化物层结合到第二晶片的第二薄氧化物层。

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