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21. 发明申请

US20090057714A1 THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR 审中-公开
标题翻译： THYRISTOR AND METHODS FOR PRODUCY THYRISTOR
公开(公告)号：US20090057714A1
公开(公告)日：2009-03-05
申请号：US12200331
申请日：2008-08-28
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L21/332 , H01L29/76
CPC分类号： H01L29/7428 , H01L24/72 , H01L29/0692 , H01L29/1608 , H01L29/66363 , H01L2224/48491
摘要： A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J·K−1·m−2 at each point.
摘要翻译：具有半导体主体的晶闸管，其中p型掺杂的发射极，n掺杂的基极，p掺杂的基极和n掺杂的主发射极在从背面向前表面的垂直方向上连续布置。为了缓冲瞬时加热，金属化被施加到前表面和/或后表面，并且包括至少一个第一部分，每个第一部分在每个部分具有大于50JK-1.m-2的面积比热容点。

22. 发明授权

US07319250B2 Semiconductor component and method for producing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07319250B2
公开(公告)日：2008-01-15
申请号：US11246345
申请日：2005-10-07
申请人： Reiner Barthelmess , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Hans-Joachim Schulze
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L21/263 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/32 , H01L29/8611
摘要： A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination centres (80A, 80B) in the semiconductor body (100) for the recombination of the first and second conduction type of charge carriers.
摘要翻译：半导体部件的制造方法具有以下步骤：使用端子电极（40）作为掩模将半导体主体（100）的前侧（101）照射高能粒子，以产生复合中心（ 80A，80B）在半导体本体（100）中用于第一和第二导电类型的载流子的复合。

23. 发明申请

US20070007592A1 Semiconductor Component with a Channel Stop Zone 有权
标题翻译：具有通道停止区的半导体组件
公开(公告)号：US20070007592A1
公开(公告)日：2007-01-11
申请号：US11428988
申请日：2006-07-06
申请人： Reiner Barthelmess , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Hans-Joachim Schulze
IPC分类号： H01L29/76
CPC分类号： H01L29/66325 , H01L29/0619 , H01L29/0638 , H01L29/66136 , H01L29/7395 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component has a semiconductor body (100) having a basic doping and a first and second side, an inner region (103) arranged between the first and second sides, and an edge region (104) adjacent to the inner region in a lateral direction, at least one active component zone (12) which is arranged in the inner region (103) in the region of the first side (101) and is doped complementarily to the basic doping, and a channel stop zone (20), which is arranged in the edge region (104) in the region of the first side (101), is of the same conduction type as the basic doping and is doped more heavily than the basic doping, the doping concentration in the channel stop zone (20) decreasing continuously at least in sections in a lateral direction in the direction of the active component zone (12) at least over a distance (d1) of 10 μm.
摘要翻译：半导体部件具有基本掺杂的半导体本体（100）和第一和第二侧面，布置在第一和第二侧面之间的内部区域（103）以及与侧面的内部区域相邻的边缘区域（104）在所述第一侧（101）的区域中布置在所述内部区域（103）中并且与所述基本掺杂互补地掺杂的至少一个活性组分区（12）和通道停止区（20），所述通道停止区布置在第一侧（101）的区域中的边缘区域（104）中，具有与基本掺杂相同的导电类型，并且比基本掺杂更重的掺杂，沟道停止区域（20）中的掺杂浓度至少在10m的距离（d 1）上沿横向方向在活动部件区域（12）的方向上至少连续地减小。

24. 发明授权

US08946867B2 Semiconductor component with optimized edge termination 有权
标题翻译：半导体元件具有优化的边缘终止
公开(公告)号：US08946867B2
公开(公告)日：2015-02-03
申请号：US14361376
申请日：2012-09-06
申请人： Reiner Barthelmess , Hans-Joachim Schulze , Uwe Kellner-Werdehausen , Josef Lutz , Thomas Basler
发明人： Reiner Barthelmess , Hans-Joachim Schulze , Uwe Kellner-Werdehausen , Josef Lutz , Thomas Basler
IPC分类号： H01L29/861 , H01L29/06 , H01L29/36
CPC分类号： H01L29/0657 , H01L29/0623 , H01L29/0661 , H01L29/36 , H01L29/861
摘要： A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone.At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.
摘要翻译：半导体部件包括双面半导体本体，具有第一导电类型的基本掺杂的内部区域和两个半导体区域。设置在第一侧面和内部区域之间的第一区域是具有比内部区域高的掺杂浓度的第一导电类型。设置在第二侧面和内部区域之间的第二区域具有与第一类型互补的第二导电类型，其掺杂浓度高于内部区域的掺杂浓度。至少一个第一边缘倒角至少沿着第二区域和内部区域的边缘以第一角度延伸到从第二区域到内部区域的过渡的延伸平面。第二导电类型的至少一个埋置区域设置在第一区域和内部区域之间，并且基本平行于第一区域延伸。

25. 发明授权

US08187937B2 Semiconductor component and method for producing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08187937B2
公开(公告)日：2012-05-29
申请号：US11968962
申请日：2008-01-03
申请人： Reiner Barthelmess , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Hans-Joachim Schulze
IPC分类号： H01L21/00
CPC分类号： H01L21/263 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/32 , H01L29/8611
摘要： A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination centers (80A, 80B) in the semiconductor body (100) for the recombination of the first and second conduction type of charge carriers.
摘要翻译：半导体部件的制造方法具有以下步骤：使用端子电极（40）作为掩模将半导体主体（100）的前侧（101）照射高能粒子，以产生复合中心（ 80A，80B），用于第一和第二导电类型的载流子的复合。

26. 发明授权

US08178411B2 Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权
标题翻译：用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件
公开(公告)号：US08178411B2
公开(公告)日：2012-05-15
申请号：US12550483
申请日：2009-08-31
申请人： Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译：一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体在照射侧的方向上与第一区域相邻的区域。

27. 发明申请

US20100015818A1 Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权
标题翻译：用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件
公开(公告)号：US20100015818A1
公开(公告)日：2010-01-21
申请号：US12550483
申请日：2009-08-31
申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21/263
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译：一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体在照射侧的方向上与第一区域相邻的区域。

28. 发明申请

US20080160732A1 Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone 有权
标题翻译：用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件
公开(公告)号：US20080160732A1
公开(公告)日：2008-07-03
申请号：US12039173
申请日：2008-02-28
申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译：根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。半导体体暴露在含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。

29. 发明申请

US20080132048A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20080132048A1
公开(公告)日：2008-06-05
申请号：US11968962
申请日：2008-01-03
申请人： Reiner Barthelmess , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Hans-Joachim Schulze
IPC分类号： H01L21/265
CPC分类号： H01L21/263 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/32 , H01L29/8611
摘要： A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination centres (80A, 80B) in the semiconductor body (100) for the recombination of the first and second conduction type of charge carriers.
摘要翻译：半导体部件的制造方法具有以下步骤：使用端子电极（40）作为掩模将半导体主体（100）的前侧（101）照射高能粒子，以产生复合中心（ 80A，80B）在半导体本体（100）中用于第一和第二导电类型的载流子的复合。

30. 发明授权

US07361970B2 Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权
标题翻译：一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域
公开(公告)号：US07361970B2
公开(公告)日：2008-04-22
申请号：US11083914
申请日：2005-03-18
申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L31/0248
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译：一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。

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