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    • 25. 发明授权
    • Differential junction varactor
    • 微分结变容二极管
    • US07692271B2
    • 2010-04-06
    • US11679987
    • 2007-02-28
    • Frederick Gustav AndersonRobert Mark RasselNicholas Theodore SchmidtXudong Wang
    • Frederick Gustav AndersonRobert Mark RasselNicholas Theodore SchmidtXudong Wang
    • H01L29/93
    • H01L29/93H01L29/417H01L29/66174
    • Structure and methods for a differential junction varactor. The structure includes: a silicon first region formed in a silicon substrate, the first region of a first dopant type; and a plurality of silicon second regions in physical and electrical contact with the first region, the plurality of second regions spaced apart and not in physical contact with each other, the plurality of second regions of a second dopant type, the first dopant type different from the second dopant type; a cathode terminal electrically connected to the first region; a first anode terminal electrically connected to a first set of second regions of the plurality of second regions; and a second anode terminal electrically connected to a second set of second silicon regions of the plurality of second regions, second regions of the first set of second regions alternating with second regions of the second set of second regions.
    • 差分结变容二极管的结构和方法。 该结构包括:形成在硅衬底中的硅第一区域,第一掺杂剂类型的第一区域; 以及与所述第一区域物理和电接触的多个硅第二区域,所述多个第二区域间隔开并且不彼此物理接触,所述多个第二掺杂剂类型的第二区域不同于 第二掺杂剂类型; 电连接到第一区域的阴极端子; 电连接到所述多个第二区域中的第一组第二区域的第一阳极端子; 以及第二阳极端子,电连接到所述多个第二区域中的第二组第二硅区域,所述第一组第二区域的第二区域与所述第二组第二区域的第二区域交替。