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21. 发明授权

US06257224B1 Process for working a preform made of an oxide single crystal, and a process for producing functional devices 失效
标题翻译：用于制造由氧化物单晶制成的预制件的工艺，以及制造功能元件的工艺
公开(公告)号：US06257224B1
公开(公告)日：2001-07-10
申请号：US09031566
申请日：1998-02-26
申请人： Takashi Yoshino , Kenji Kato , Minoru Imaeda
发明人： Takashi Yoshino , Kenji Kato , Minoru Imaeda
IPC分类号： B28D104
CPC分类号： H01L21/304 , B23K26/364 , B28D5/0005 , B28D5/0011 , C30B33/00 , Y10S125/901 , Y10T225/12
摘要： A process for dicing a preform made of an oxide single crystal into cut pieces each having a given shape, includes the steps of removing molecules of the oxide single crystal through dissociation and evaporation with an optochemical reaction under irradiation of a laser beam upon the preform, thereby forming grooves on the preform, and then cleaving the preform along the groove.
摘要翻译：将由氧化物单晶制成的预成型体切割成具有给定形状的切割片的方法包括以下步骤：通过激光束照射在预成型体上的光化学反应通过解离和蒸发除去氧化物单晶的分子，从而在预成型件上形成凹槽，然后沿着凹槽切割预成型件。

22. 发明授权

US06204957B1 Second harmonic wave-generating element 失效
标题翻译：二次谐波发生元件
公开(公告)号：US06204957B1
公开(公告)日：2001-03-20
申请号：US09307525
申请日：1999-05-07
申请人： Takashi Yoshino , Katsuhiro Imai , Minoru Imaeda , Kiyofumi Chikuma , Atsushi Onoe , Ayako Yoshida
发明人： Takashi Yoshino , Katsuhiro Imai , Minoru Imaeda , Kiyofumi Chikuma , Atsushi Onoe , Ayako Yoshida
IPC分类号： G02F137
CPC分类号： G02F1/377 , G02F2001/3546 , G02F2201/307
摘要： A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).
摘要翻译：一种用于从基波产生二次谐波的二次谐波发生元件，具有由具有K3Li2-x（Nb1-YTaY）5 + XO15 + Z的基本组成的第一外延材料制成的光波导层，下部部分由具有K3Li2-X + A（Nb1-Y-BTaY + B）5 + X-AO15 + Z的基本组成的第二外延材料制成，由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层（Nb1-Y-DTaY + D）5 + X-CO15 + Z，形成在光波导层上并与光波导层接触，其中X = 0.006〜0.5，Y = 0.00〜0.05，A = 0.006〜0.12，B = 0.005〜0.5 ，C = 0.006〜0.12，D = 0.005〜0.5，XA <= 0，XC> = 0，| AC |≤0.006，| BD |≤0.005）。

23. 发明授权

US5991067A Optical waveguide substrate, optical waveguide device, second harmonic generation device, and process of producing optical waveguide substrate 失效
标题翻译：光波导基板，光波导装置，二次谐波发生装置以及光波导基板的制造工序
公开(公告)号：US5991067A
公开(公告)日：1999-11-23
申请号：US922565
申请日：1997-09-03
申请人： Makoto Minakata , Tatsuo Kawaguchi , Minoru Imaeda
发明人： Makoto Minakata , Tatsuo Kawaguchi , Minoru Imaeda
IPC分类号： G02B6/12 , G02B6/122 , G02F1/035 , G02F1/37 , G02F1/377
CPC分类号： G02F1/035 , G02B6/122 , G02F1/3775 , G02B2006/12097
摘要： An optical waveguide substrate having a substrate made of ferroelectric optical single crystal and a ridge portion projected from a main plane of the substrate, has a construction such that the ridge portion has a base portion made of ferroelectric optical single crystal and an optical waveguide formed on the base portion. The optical waveguide substrate is formed by forming at least one optical waveguide layer on a main plane of a substrate made of ferroelectric optical single crystal, and mechanically working main planes of the optical waveguide layer and the substrate to form a ridge portion projected from the main plane of the substrate. The optical waveguide substrate can reduce a light transmission loss, increase an extinction ratio, and improve an electric field applying efficiency.
摘要翻译：具有由铁电光学单晶构成的基板和从基板的主面突出的脊部的光波导基板具有这样的结构，使得该脊部具有由铁电光学单晶构成的基部和形成在基部。光波导基板通过在由铁电光学单晶制成的基板的主平面上形成至少一个光波导层，以及在光波导层和基板的机械加工主平面上形成从主体突出的脊部基板的平面。光波导基板可以减少光传输损耗，提高消光比，提高电场施加效率。

24. 发明授权

US08512476B2 Ultrasonic cleaning method, and ultrasonic cleaning apparatus 有权
标题翻译：超声波清洗方法和超声波清洗装置
公开(公告)号：US08512476B2
公开(公告)日：2013-08-20
申请号：US12716479
申请日：2010-03-03
申请人： Kimihisa Kaneko , Kunihiko Yoshioka , Minoru Imaeda
发明人： Kimihisa Kaneko , Kunihiko Yoshioka , Minoru Imaeda
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , B08B3/048
摘要： The frequency and power of ultrasonic waves is adjusted to materialize the relation 0.04f−20.0≦P≦0.09f−7.5, wherein f (kHz) is the frequency of the ultrasonic waves and P (W/L) is the power per unit fluid volume obtained by dividing the power (W) of the ultrasonic waves by the volume (L) of a cleaning fluid. The discharge condition of the cleaning fluid by a pump is adjusted such that the proportion (C5) of the brightness of the fluid when 5 seconds has passed since the state wherein both an ultrasonic wave irradiation means and a bubble supply means are concurrently operating to the brightness of the fluid when no bubbles exist in the fluid is 0.75 or less. The coalition and crush of bubbles due to the irradiation of ultrasonic waves are suppressed, and the both actions can be utilized for a long period.
摘要翻译：调整超声波的频率和功率，以实现0.04f-20.0 @ P @ 0.09f-7.5的关系，其中f（kHz）是超声波的频率，P（W / L）是每单位流体的功率通过将超声波的功率（W）除以清洁液体积（L）而获得的体积。调整清洗液的排出状态，使得当从超声波照射装置和气泡供给装置两者同时操作到另一个状态时，经过5秒的流体的亮度的比例（C5）液体中没有气泡时流体的亮度为0.75以下。抑制由于超声波照射引起的气泡的联合和粉碎，并且这两种动作可以长时间使用。

25. 发明授权

US07927982B2 Apparatus for mass-producing silicon-based thin film and method for mass-producing silicon-based thin film 有权
标题翻译：用于批量生产硅基薄膜的装置和用于批量生产硅基薄膜的方法
公开(公告)号：US07927982B2
公开(公告)日：2011-04-19
申请号：US12411528
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01J37/32027 , C23C14/566 , C23C16/4401 , C23C16/54 , H01J37/32018 , H01J37/32045 , H01J37/32568
摘要： A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.
摘要翻译：通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

26. 发明申请

US20110011333A1 APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTALS 审中-公开
标题翻译：用于制造III类氮化物晶体的装置
公开(公告)号：US20110011333A1
公开(公告)日：2011-01-20
申请号：US12889539
申请日：2010-09-24
申请人： Minoru IMAEDA , Yoshimasa Kondo , Ichiro Okazaki
发明人： Minoru IMAEDA , Yoshimasa Kondo , Ichiro Okazaki
IPC分类号： C30B15/10
CPC分类号： C30B29/403 , C30B7/00 , C30B9/10 , C30B19/02 , Y10T117/1032
摘要： An apparatus for producing group III nitride crystals includes a pressure container, a reaction vessel positioned in the pressure container, a supplier for supplying an interior of the pressure container with nitrogen gas and nitrogen mixed gas at 1 to 20 MPa, a heater for heating the reaction vessel in the pressure container to at least 700° C., a power unit, a seed crystal arrangement for holding a plurality of seed crystal substrates, a dry box part disposed outside the pressure container, and raising/lowering and rotational axes disposed outside the pressure container.
摘要翻译：用于制造III族氮化物晶体的装置包括压力容器，位于压力容器中的反应容器，用于向压力容器内部供应1至20MPa的氮气和氮气混合气体的供应器，压力容器内的反应容器至少为700℃，功率单元，用于保持多个种子晶体基板的籽晶布置，设置在压力容器外部的干燥箱部分，以及设置在外部的升降机构和旋转轴线压力容器。

27. 发明授权

US07833346B2 Method and apparatus for manufacturing group III nitride crystals 有权
标题翻译：制造III族氮化物晶体的方法和装置
公开(公告)号：US07833346B2
公开(公告)日：2010-11-16
申请号：US11685933
申请日：2007-03-14
申请人： Minoru Imaeda , Yoshimasa Kondo , Ichiro Okazaki
发明人： Minoru Imaeda , Yoshimasa Kondo , Ichiro Okazaki
IPC分类号： C30B19/00 , C30B7/00 , C30B28/06
CPC分类号： C30B29/403 , C30B7/00 , C30B9/10 , C30B19/02 , Y10T117/1032
摘要： There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for formation of transistor or the like. A growth method of group III nitride crystals includes: forming a mixed melt containing at least group III element and a flux formed of at least one selected from the group consisting of-alkaline metal and alkaline earth metal, in a reaction vessel; and growing group III nitride crystals from the mixed melt and a substance containing at least nitrogen, wherein after immersing a plurality of seed crystal substrates placed in an upper part of the reaction vessel in which the mixed melt is formed, into the mixed melt to cause crystal growth, the plurality of seed crystal substrates are pulled up above the mixed melt.
摘要翻译：提供了能够获得能够用作功率半导体衬底的低缺陷密度的GaN衬底的材料的III族氮化物晶体生长方法，其中形成晶体管所需的n型和p型的特性或类似物。 III族氮化物晶体的生长方法包括：在反应容器中形成含有至少III族元素的混合熔体和由选自碱金属和碱土金属的至少一种形成的焊剂; 和来自混合熔体的III族氮化物晶体和至少含有氮的物质，其中将放置在其中形成混合熔体的反应容器的上部的多个晶种衬底浸入混合熔体中，使得晶体生长，将多个晶种基板拉高到混合熔体上方。

28. 发明申请

US20100201018A1 FORMING DIE AND METHOD FOR MANUFACTURING FORMED BODY USING FORMING DIE 有权
标题翻译：成型模具和使用成型模具制造成形体的方法
公开(公告)号：US20100201018A1
公开(公告)日：2010-08-12
申请号：US12648535
申请日：2009-12-29
申请人： Kunihiko YOSHIOKA , Satoshi Ishibashi , Minoru Imaeda , Yosuke Okabe
发明人： Kunihiko YOSHIOKA , Satoshi Ishibashi , Minoru Imaeda , Yosuke Okabe
IPC分类号： B29C41/50 , B29C39/26 , B29C41/42
CPC分类号： B28B13/021 , B28B7/16 , C04B35/111 , C04B35/14 , C04B35/26 , C04B35/486 , C04B35/565 , C04B35/584 , C04B35/6269 , C04B35/632 , C04B2235/602 , C04B2235/604
摘要： In the assembly-completed state, the Lower Mold, the Outer Mold, the Upper Mold, and the “inner mold (the integral body of the Pin-holder and the Pin)” are stacked and fixed in this order from the bottom, and the Pin is coaxially inserted into the First Hole of the Outer Mold and the Second Hole of the Upper Mold. In the assembly-completed state, the molding space for molding the ceramic molded body is formed between the surface of the Pin and the First Hole, and the annular minute gap is formed between the surface of the Pin and the Second Hole. The ceramic slurry poured into the Slurry Reservoir Pres formed on the upper surface of the Upper Mold falls and flows into the molding space through the annular minute gap by virtue of the action of gravity or the like.
摘要翻译：在组装完成状态下，下模，外模，上模和“内模（销夹和销的整体）”从底部依次堆叠固定，销同轴地插入外模的第一孔和上模的第二孔。在组装完成状态下，用于模制陶瓷成形体的模制空间形成在销的表面和第一孔之间，并且在销的表面和第二孔之间形成环形微小间隙。倾倒在上模具上表面上形成的浆料储存罐中的陶瓷浆料通过重力等的作用通过环形微小间隙流入成形空间。

29. 发明授权

US07290328B2 Method of manufacturing optical modulator 失效
标题翻译：光调制器的制造方法
公开(公告)号：US07290328B2
公开(公告)日：2007-11-06
申请号：US10942562
申请日：2004-09-16
申请人： Jungo Kondo , Yukio Mizuno , Minoru Imaeda , Atsuo Kondo
发明人： Jungo Kondo , Yukio Mizuno , Minoru Imaeda , Atsuo Kondo
IPC分类号： H01R43/00
CPC分类号： G02F1/225 , G02F1/2255 , G02F2203/21 , Y10T29/49002 , Y10T29/49016 , Y10T29/49085 , Y10T29/49117 , Y10T29/49126
摘要： Major surface of a substrate having an optical waveguide and a modulation electrode is pasted to a base substrate through a thermosetting resin, and then the rear surface of the substrate is machined thus making thin the entirety. Subsequently, the rear surface of the substrate thus rendered thin is subjected to machining or laser machining to form a thin part, which is further subjected to machining or laser machining to form a first thin part at a part, including the optical waveguide, of the thin part and a second thin part thinner than the first thin part contiguously thereto. Thereafter, the rear surface of the substrate is pasted to the major surface of a supporting substrate through a thermosetting resin and the base substrate is stripped thus obtaining an optical modulator.
摘要翻译：具有光波导和调制电极的基板的主表面通过热固性树脂粘贴到基底基板上，然后对基板的后表面进行加工，从而使整体变薄。随后，将如此变薄的基板的后表面进行机械加工或激光加工，以形成薄的部分，进一步进行加工或激光加工，以在包括光波导的部分形成第一薄部分薄部分和与其相邻的第一薄部分更薄的第二薄部分。此后，通过热固性树脂将基板的后表面粘贴到支撑基板的主表面，并剥离基板，从而获得光学调制器。

30. 发明授权

US06687448B2 Method of processing a substrate made of a ferroelectric single crystalline material 失效
标题翻译：处理由铁电单晶材料制成的基板的方法
公开(公告)号：US06687448B2
公开(公告)日：2004-02-03
申请号：US09250190
申请日：1999-02-16
申请人： Makoto Iwai , Tatsuo Kawaguchi , Minoru Imaeda
发明人： Makoto Iwai , Tatsuo Kawaguchi , Minoru Imaeda
IPC分类号： G02B610
CPC分类号： G02B6/1345 , G02F1/3558 , G02F1/3775
摘要： A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.
摘要翻译：一种处理由铁电单晶材料制成的衬底的方法，包括以下步骤：通过质子交换衬底的一部分在衬底中形成所需的质子交换层，并选择性地除去质子交换层以形成凹陷铁电单晶衬底中的沟槽结构，其中通过使用含有锂盐作为质子交换源的酸形成所需的质子交换层，形成凹沟结构的衬底的表面是X射线，切割面或作为基板的铁电单晶材料的主表面的Z切割面，并且凹沟结构具有深度等于或大于其半开口宽度的凹部。

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