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21. 发明授权

US06987687B2 Semiconductor memory and its driving method 失效
标题翻译：半导体存储器及其驱动方法
公开(公告)号：US06987687B2
公开(公告)日：2006-01-17
申请号：US10715524
申请日：2003-11-19
申请人： Kinya Ashikaga
发明人： Kinya Ashikaga
IPC分类号： G11C11/22 , G11C11/42 , G11C5/06 , G11C7/00 , G11C7/02
CPC分类号： G11C11/22
摘要： A ferroelectric memory of a 1T/1C type has a pair of dummy memory cells DMC2n−1 and DMC2n. Different information have been stored in the dummy memory cells. When the information is read, out from each dummy memory cell, a potential Va is developed on a bit line BL2n−1, a potential Vb is developed on an adjacent bit line BL2n. Since the bit lines BL2n−1 and BL2n have the same capacitance, a potential Vave of each bit line which was short-circuited by a short-circuit portion s2a is equal to a just intermediate value (Va+Vb)/2 of the potentials Va and Vb. The potential Vave is applied to sense amplifiers SAn−1 and SAn as a reference potential.
摘要翻译： 1T / 1C型铁电存储器具有一对虚拟存储单元DMC 2 n-1和DMC 2 n。不同的信息已被存储在虚拟存储器单元中。当从每个虚拟存储器单元读出信息时，在位线BL 2 n-1上形成电位Va，在相邻位线BL 2 n上形成电位Vb。由于位线BL 2 n-1和BL 2 n具有相同的电容，所以由短路部分s 2 a短路的每个位线的电位Vave等于刚好的中间值（Va + Vb ）/ 2的电位Va和Vb。电位Vave被应用于读出放大器SAn-1和SAn作为参考电位。

22. 发明授权

US06859380B2 Ferroelectric memory and method of operating same 有权
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06859380B2
公开(公告)日：2005-02-22
申请号：US10247291
申请日：2002-09-20
申请人： Kinya Ashikaga
发明人： Kinya Ashikaga
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory reads data from a memory cell by using a sense amplifier to compare a reference potential with a potential produced on a bit line by the memory cell. The reference potential may generated by a pre-charge circuit connected to the sense amplifier. Alternatively, the reference potential may be generated by the memory cell itself. In either case, the reference potential is obtained without the need for a reference cell, and without the need to drive a bit line to the reference potential. Current consumption is accordingly reduced, and integration density can be increased.
摘要翻译：铁电存储器通过使用读出放大器从存储器单元读取数据，以将参考电位与存储器单元在位线上产生的电位进行比较。参考电位可以由连接到读出放大器的预充电电路产生。或者，参考电位可以由存储器单元本身产生。在任一情况下，获得参考电位而不需要参考单元，并且不需要将位线驱动到参考电位。相应地减少了电流消耗，并且可以增加集成密度。

23. 发明授权

US06590245B2 Ferroelectric memory 有权
公开(公告)号：US06590245B2
公开(公告)日：2003-07-08
申请号：US10243656
申请日：2002-09-16
申请人： Kinya Ashikaga
发明人： Kinya Ashikaga
IPC分类号： H01L31119
CPC分类号： G11C11/22
摘要： A ferroelectric memory of the present invention comprises a memory cell which includes a select transistor whose control electrode, first electrode and second electrode are respectively connected to a word line, a bit line and a first node, a ferroelectric capacitor whose first electrode and second electrode are respectively connected to the first node and connected to a plate line through a second node, and a resistor connected between the first node and the second node.

24. 发明授权

US06519203B2 Ferroelectric random access memory and its operating method 失效
公开(公告)号：US06519203B2
公开(公告)日：2003-02-11
申请号：US10152847
申请日：2002-05-23
申请人： Kinya Ashikaga
发明人： Kinya Ashikaga
IPC分类号： G11C800
CPC分类号： G11C11/22
摘要： A ferroelectric memory device in which an imprint is prevented, and a method of operating the ferroelectric memory device to prevent its characteristics from deteriorating due to an imprint. The ferroelectric memory device includes a sense amplifier having first and second transistors which connect first and third sub-bit lines to a ground in accordance with a sense amplifier control signal, third and fourth transistors which connect the first sub-bit line with a fourth sub-bit line and further connect the third sub-bit line with a second sub-bit line in accordance with a first switching control signal, and fifth and sixth transistors which connect the first sub-bit line with the second sub-bit line and further connect the third sub-bit line with the fourth sub-bit line in accordance with a second switching control signal.

25. 发明授权

US06496407B2 Ferroelectric memory 有权
标题翻译：铁电存储器
公开(公告)号：US06496407B2
公开(公告)日：2002-12-17
申请号：US09741029
申请日：2000-12-21
申请人： Kinya Ashikaga
发明人： Kinya Ashikaga
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A ferroelectric memory of the present invention comprises a memory cell which includes a select transistor whose control electrode, first electrode and second electrode are respectively connected to a word line, a bit line and a first node, a ferroelectric capacitor whose first electrode and second electrode are respectively connected to the first node and connected to a plate line through a second node, and a resistor connected between the first node and the second node.
摘要翻译：本发明的铁电体存储器包括：存储单元，其包括选择晶体管，其控制电极，第一电极和第二电极分别连接到字线，位线和第一节点;铁电电容器，其第一电极和第二电极分别连接到第一节点并通过第二节点连接到板线，以及连接在第一节点和第二节点之间的电阻器。

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