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    • 26. 发明申请
    • HINGE UNIT AND PORTABLE COMPUTER HAVING THE SAME
    • 铰链单元和便携式计算机
    • US20110085289A1
    • 2011-04-14
    • US12858568
    • 2010-08-18
    • Young-sun PARKEduard KURGIJung-hyeon KIM
    • Young-sun PARKEduard KURGIJung-hyeon KIM
    • G06F1/16E05D5/14
    • G06F1/1681Y10T16/533Y10T16/557
    • Disclosed are a hinge unit which couples a first member and a second member, the hinge unit including: a conic shaft which is coupled to the first member, and comprises a hinge pivot, a conic unit of a truncated cone shape, the radius of which is extended in an end area of the hinge pivot, and a first rocking unit formed to an outer surface of the conic unit; and a conic sleeve which is coupled to the second member, and comprises a sleeve main body formed with a conic accommodating unit having a shape corresponding to the conic unit in an inner part of the conic accommodating unit, and a second rocking unit formed to an inner surface of the conic accommodating unit to be coupled with the first rocking unit.
    • 公开了一种联接第一构件和第二构件的铰链单元,所述铰链单元包括:连接到第一构件的圆锥轴,并且包括铰链枢轴,圆锥形的锥形单元,其半径 在所述铰链枢轴的端部区域中延伸,以及形成在所述圆锥单元的外表面上的第一摇摆单元; 以及耦合到所述第二构件的圆锥套筒,并且包括套筒主体,所述套筒主体形成有锥形容纳单元,所述锥形容纳单元具有与所述锥形容纳单元的内部中的所述锥形单元相对应的形状,以及第二摇摆单元, 锥形容纳单元的内表面与第一摇摆单元联接。
    • 27. 发明授权
    • CMOS image sensors and methods of manufacturing the same
    • CMOS图像传感器及其制造方法
    • US07875491B2
    • 2011-01-25
    • US12010349
    • 2008-01-24
    • Doo-cheol ParkJung-hyeon KimJun-young Lee
    • Doo-cheol ParkJung-hyeon KimJun-young Lee
    • H01L21/00
    • H01L27/14609H01L27/14645H01L27/14689
    • A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.
    • 互补金属氧化物半导体图像传感器可以包括:半导体衬底; 形成在所述半导体衬底的第一部分上的光电二极管; 在所述半导体衬底上形成的传输门,在所述光电二极管附近,以传输光电二极管中累积的光电荷; 浮动扩散区,形成在半导体衬底的第二部分上,在与光电二极管的传输栅极相对的一侧,以适应光电荷; 和/或形成在传输门下方并且与光电二极管的一侧接触以传送光电荷的沟道区。 传输门可以至少部分地由透明材料形成。 互补金属氧化物半导体图像传感器的制造方法可以包括:形成光电二极管; 形成与光电二极管分离的浮动扩散区域; 和/或在光电二极管附近形成传输门,以转移积聚在光电二极管中的光电荷。
    • 30. 发明申请
    • Antifuse circuit of inverter type and method of programming the same
    • 逆变器类型的防腐电路及其编程方法
    • US20100127731A1
    • 2010-05-27
    • US12585276
    • 2009-09-10
    • Jae-Yong SeoGu-Gwan KangTae-Hun KangHong-Sik ParkJung-Hyeon Kim
    • Jae-Yong SeoGu-Gwan KangTae-Hun KangHong-Sik ParkJung-Hyeon Kim
    • H03K19/173H01H37/76
    • H03K19/173G11C17/18H01L23/5252H01L2924/0002H01L2924/00
    • Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.
    • 示例性实施例涉及逆变器类型的反熔丝电路及其编程方法。 反熔丝电路具有改善的耐腐蚀性,使用较小的芯片面积,并且可以在低电压下编程。 反熔丝电路包括PMOS晶体管,其栅极耦合到驱动电源电压端子,并且源极耦合到反焊盘端子。 在编程期间,PMOS晶体管截止,源极接收交流电流。 对反熔丝电路的编程涉及在栅极引起的漏极泄漏的情况下在STI区域中捕获多个电子。 反熔丝电路还包括NMOS晶体管,漏极连接到PMOS晶体管的漏极,源极连接到地,栅极连接到编程控制信号。 反熔丝电路通过使用PMOS晶体管作为反熔丝器件,在低电压下实现可靠​​的熔丝编程。