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21. 发明申请

US20050045895A1 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US20050045895A1
公开(公告)日：2005-03-03
申请号：US10963666
申请日：2004-10-13
申请人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
发明人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱结构。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0 <= X <1且0 <= Y <1，X 不等于Y.半导体器件可以是具有基于III族氮化物的有源区的发光二极管。有源区可以是多量子阱有源区。

22. 发明授权

US06614056B1 Scalable led with improved current spreading structures 有权
标题翻译：具有改进的电流扩展结构的可扩展性
公开(公告)号：US06614056B1
公开(公告)日：2003-09-02
申请号：US09721352
申请日：2000-11-21
申请人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
发明人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
IPC分类号： H01L29205
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/64
摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.
摘要翻译：一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。

23. 发明授权

US09666772B2 High powered light emitter packages with compact optics 有权
公开(公告)号：US09666772B2
公开(公告)日：2017-05-30
申请号：US10836743
申请日：2004-04-29
申请人： James Ibbetson , Jayesh Bharathan , Bernd Keller
发明人： James Ibbetson , Jayesh Bharathan , Bernd Keller
IPC分类号： H01L33/54 , H01L33/60 , H01L33/64 , H01L33/56 , H01L33/58
CPC分类号： H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/641 , H01L2224/48091 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitter includes a planar supporting surface, a light source positioned on the spreader region, and an encapsulant positioned on the spreader region to surround the light source. Except where constrained by adhesion to the planar supporting surface, the encapsulant is capable of expanding and contracting in response to a change in temperature so that forces caused by differences in the coefficient of thermal expansion between the different components is minimized. One or more reflective elements can be positioned proximate to the light source to increase the light emitting efficiency of the light emitter. The reflective elements can include a reflective layer on the spreader region and/or a reflective layer on a portion of the encapsulant.

24. 发明授权

US09634191B2 Wire bond free wafer level LED 有权
公开(公告)号：US09634191B2
公开(公告)日：2017-04-25
申请号：US11985410
申请日：2007-11-14
申请人： Bernd Keller , Ashay Chitnis , Nicholas W. Medendorp, Jr. , James Ibbetson , Max Batres
发明人： Bernd Keller , Ashay Chitnis , Nicholas W. Medendorp, Jr. , James Ibbetson , Max Batres
IPC分类号： H01L33/00 , H01L33/38 , H01L33/58 , H01L33/50 , H01L33/22 , H01L33/48 , H01L33/62 , H01L33/46
CPC分类号： H01L25/0756 , H01L33/08 , H01L33/22 , H01L33/385 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2224/45139 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014 , H01L2924/00 , H01L2224/45099
摘要： A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

25. 发明授权

US09054282B2 Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same 有权
标题翻译：具有应用波长转换材料的半导体发光器件及其形成方法
公开(公告)号：US09054282B2
公开(公告)日：2015-06-09
申请号：US12976769
申请日：2010-12-22
申请人： Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
发明人： Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
IPC分类号： H01L33/00 , H01L33/50 , H01L33/20
CPC分类号： H01L33/508 , H01L33/20 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要翻译：半导体结构包括被配置为在施加电压时发光的有源区，被配置为接收由有源区发射的光的窗口层和窗口层上的多个离散的含磷光体的区域，并且被配置为接收由有源区发射的光并将至少一部分接收的光转换成与由有源区发射的光的波长不同的波长。形成包括被配置为发光的有源区域和窗口层的半导体结构的方法包括在窗口层上形成多个离散的含磷光体区域。

26. 发明授权

US09012937B2 Multiple conversion material light emitting diode package and method of fabricating same 有权
公开(公告)号：US09012937B2
公开(公告)日：2015-04-21
申请号：US11974431
申请日：2007-10-10
申请人： Bernd Keller , James Ibbetson
发明人： Bernd Keller , James Ibbetson
IPC分类号： H01L33/00 , C09K11/77 , H01L33/50
CPC分类号： C09K11/7734 , H01L33/504 , H01L2924/0002 , H01L2924/00
摘要： An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials. The plurality of conversion materials have excitation characteristics that compensate for different LED emission wavelengths within the LED range of wavelengths such that each of the LED packages emits light within a standard deviation from a target color.

27. 发明授权

US08957440B2 Light emitting devices with low packaging factor 有权
标题翻译：具有低封装因素的发光器件
公开(公告)号：US08957440B2
公开(公告)日：2015-02-17
申请号：US13252448
申请日：2011-10-04
申请人： James Ibbetson , David Todd Emerson
发明人： James Ibbetson , David Todd Emerson
IPC分类号： H01L29/22 , H01L33/54 , H01L33/22 , H01L33/40 , H01L33/46
CPC分类号： H01L33/54 , H01L33/22 , H01L33/405 , H01L33/46 , H01L2224/48091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode die that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. The light emitting diode die may include a stacked structure including a metal overlay, a composite high reflectivity mirror on the metal overlay, a transparent conductive oxide layer on the composite high reflectivity mirror, and a diode structure on the transparent conductive oxide layer. The diode structure may include a roughened surface opposite the transparent conductive oxide layer, a submount connected to the composite high reflectivity mirror and a bond metal between the submount and the metal overlay. A conductive via may extend through the composite high reflectivity mirror and electrically connect the transparent conductive oxide and the bond metal.
摘要翻译：当封装在包覆成型的半球形透镜中时，发光二极管管芯的封装因子小于1.2。发光二极管管芯可以包括金属覆层，金属覆层上的复合高反射镜，复合高反射镜上的透明导电氧化物层和透明导电氧化物层上的二极管结构的层叠结构。二极管结构可以包括与透明导电氧化物层相对的粗糙表面，连接到复合高反射率反射镜的基座和底座和金属覆盖层之间的接合金属。导电通孔可以延伸穿过复合高反射镜并电连接透明导电氧化物和接合金属。

28. 发明授权

US08680556B2 Composite high reflectivity layer 有权
标题翻译：复合高反射层
公开(公告)号：US08680556B2
公开(公告)日：2014-03-25
申请号：US13415626
申请日：2012-03-08
申请人： James Ibbetson , Ting Li , Bernd Keller
发明人： James Ibbetson , Ting Li , Bernd Keller
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/46 , G02B19/0028 , G02B19/0061 , H01L33/48 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.
摘要翻译：一种具有与所述LED或封装集成的复合高反射率层的高效率发光二极管，以提高发射效率。发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

29. 发明授权

US08669572B2 Power lamp package 有权
标题翻译：电源灯包装
公开(公告)号：US08669572B2
公开(公告)日：2014-03-11
申请号：US11149998
申请日：2005-06-10
申请人： Michael Leung , James Ibbetson
发明人： Michael Leung , James Ibbetson
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： Adhesive-free assembly of the substrate and reflector components of a semiconductor die package is achieved by injection molding the reflector onto a surface of the substrate or by molding the reflector separate from the substrate and securing it in place on the substrate through deformation of a portion of the reflector. The reflector may be made reflective either by molding the reflector using a light scattering material or through the addition of a reflective element, such as a piece of foil material that is secured to the reflector. A variety of interchangeable reflective elements having different surface shapes, and thus different light reflecting properties, may be made.
摘要翻译：半导体管芯封装的衬底和反射器部件的无粘合剂组装通过将反射器注射到衬底的表面上或通过将反射器与衬底分离成模并将其固定在衬底上的适当位置来实现，的反射器。反射器可以通过使用光散射材料模制反射器或通过添加反射元件（例如固定到反射器的箔片材料）来制成。可以制造具有不同表面形状，因此具有不同光反射特性的各种可互换的反射元件。

30. 发明授权

US08617909B2 LED with substrate modifications for enhanced light extraction and method of making same 有权
公开(公告)号：US08617909B2
公开(公告)日：2013-12-31
申请号：US12384277
申请日：2009-04-01
申请人： Max Batres , James Ibbetson , Ting Li , Adam W. Saxler
发明人： Max Batres , James Ibbetson , Ting Li , Adam W. Saxler
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2924/10155 , H01L2224/0401
摘要： The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

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