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    • 25. 发明授权
    • Thin film resonators fabricated on membranes created by front side releasing
    • 薄膜谐振器制造在由前端释放产生的膜上
    • US06355498B1
    • 2002-03-12
    • US09637069
    • 2000-08-11
    • Edward ChanHarold Alexis HugginsJungsang KimHyongsok Soh
    • Edward ChanHarold Alexis HugginsJungsang KimHyongsok Soh
    • H01L2100
    • H03H9/173B81B2201/0271B81C1/00142B81C2201/014H03H3/02H03H2003/021
    • A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.
    • 新的体谐振器可以通过容易地结合在晶片上制造单片集成电路中的传统制造技术中的工艺来制造。 谐振器通过使用谐振膜内的前开口(通孔)进行选择性蚀刻而在谐振器下方蚀刻的腔体与晶片分离。 在典型的结构中,谐振器通过首先形成第一电极而在硅晶片上形成,在电极和晶片表面上涂覆压电层,并形成与压电层表面上的第一电极相对的第二电极。 在该结构完成之后,在将压电层下方的表面暴露的压电层中蚀刻多个通孔至选择性蚀刻工艺,该选择性蚀刻工艺选择性地攻击压电层下方的表面,从而在谐振器下形成空腔。
    • 28. 发明申请
    • IMPARTING CRYPTOGRAPHIC INFORMATION IN NETWORK COMMUNICATIONS
    • 在网络通信中加强拼接信息
    • US20090097651A1
    • 2009-04-16
    • US11872661
    • 2007-10-15
    • Asa WhillockEdward ChanSrinivas ManapragadaMatthew KaufmanPritham ShettyMichael Thornburgh
    • Asa WhillockEdward ChanSrinivas ManapragadaMatthew KaufmanPritham ShettyMichael Thornburgh
    • H04L9/32H04K1/00
    • H04L63/08H04L9/0841H04L63/0428H04L2209/60H04L2209/80
    • This specification describes technologies relating to imparting cryptographic information in network communications. In general, aspects of the subject matter described in this specification can be embodied in methods that include identifying a location in a pre-defined portion of a network communication to be sent in a client-server environment, wherein the pre-defined portion is reserved for random data, inserting cryptographic information into the pre-defined portion of the network communication at the location, and sending the network communication in the client-server environment to facilitate modifying interactions in the client-server environment based at least in part on a result of processing of the cryptographic information; and on a receiving side, receiving cryptographic information inserted into the pre-defined portion of the network communication in the client-server environment, identifying the location, processing the cryptographic information, and modifying interactions in the client-server environment based at least in part on a result of the processing.
    • 本说明书描述了在网络通信中传递加密信息的技术。 通常,本说明书中描述的主题的方面可以体现在包括识别要在客户端 - 服务器环境中发送的网络通信的预定义部分中的位置的方法中,其中预定义部分被保留 对于随机数据,将加密信息插入在该位置处的网络通信的预定义部分中,以及在客户端 - 服务器环境中发送网络通信,以便于至少部分地基于结果来促进修改客户机 - 服务器环境中的交互 处理加密信息; 并且在接收侧,接收插入到客户端 - 服务器环境中的网络通信的预定义部分中的加密信息,至少部分地识别位置,处理密码信息以及修改客户机 - 服务器环境中的交互 处理的结果。
    • 30. 发明授权
    • Increased bandwidth thin film resonator having a columnar structure
    • 具有柱状结构的增加的带宽薄膜谐振器
    • US06486751B1
    • 2002-11-26
    • US09669944
    • 2000-09-26
    • Bradley Paul BarberEdward ChanJohn Edwin Graebner
    • Bradley Paul BarberEdward ChanJohn Edwin Graebner
    • H03H917
    • H03H9/172H03H3/02H03H9/173H03H9/175Y10T29/42
    • Improved bandwidths and oscillation uniformity is obtained through a rod type BAW TFR structure formed over a semiconductor support. The resonator includes a first and a second electrode and a plurality of distinct elemental piezoelectric structures between the electrodes. Each of the piezoelectric structures has a length, a width and a height, the height being the distance between the electrodes. The height of the piezoelectric structures is at least equal to or more than one of the length or the width, or both. Such resonator is made by forming on a common bottom a plurality of distinct piezoelectric structures each having a length, a width and a height, wherein the height is formed at least equal to the width or the length of the piezoelectric structure, and forming a common top electrode thereover.
    • 通过在半导体支架上形成的棒式BAW TFR结构可获得改善的带宽和振荡均匀性。 谐振器包括第一和第二电极以及电极之间的多个不同的元素压电结构。 每个压电结构具有长度,宽度和高度,高度是电极之间的距离。 压电结构的高度至少等于或大于长度或宽度之一,或两者。 这样的谐振器通过在公共底部上形成多个不同的压电结构,每个压电结构具有长度,宽度和高度,其中高度形成为至少等于压电结构的宽度或长度,并形成共同的 顶部电极。