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    • 21. 发明申请
    • PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS
    • 等离子体处理装置和检测装置状态的方法
    • US20090105980A1
    • 2009-04-23
    • US12025095
    • 2008-02-04
    • Tsutomu TETSUKANaoshi ItabashiAtsushi Itou
    • Tsutomu TETSUKANaoshi ItabashiAtsushi Itou
    • B05C11/00G06F19/00G01R23/16
    • H01J37/32082H01J37/321H01J37/32174H01J37/32935
    • The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.
    • 本发明提供了一种用于检测和管理具有高灵敏度的等离子体处理装置的状态以便能够进行长期稳定处理的方法。 在包括真空处理室10,等离子体产生高频电源16和测量装置单元3的等离子体处理装置中,用于通过从包括a的处理装置反射的入射波53的反射波54估计装置的状态 波形发生器32,VCO33,定向耦合器34,检测器35和测量数据处理单元36,将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中,以便监视 反射波54的吸收光谱频率的变化,从而监视处理装置的状态变化。