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    • 21. 发明授权
    • Broadband balun and impedance transformer for push-pull amplifiers
    • 用于推挽放大器的宽带平衡 - 不平衡变压器和阻抗变压器
    • US06819200B2
    • 2004-11-16
    • US10206164
    • 2002-07-26
    • Lei ZhaoAnthony M. Pavio
    • Lei ZhaoAnthony M. Pavio
    • H03H500
    • H03H7/42H03H7/38
    • A balun and transformer system (201) is provided in which a balun (112) is cascaded between two 4:1 impedance transformers (102, 110) to form a 16:1 broadband impedance transformation for push-pull amplifier applications (200). The balun (112) is configured in a Marchand configuration. The balun and transformers (201) are formed with coupled lines realized with a very thin layer of ceramic. Additional coupling between the gap in the balun (112) is achieved by an embedded capacitor (260) built in the balun's ceramic. DC bias supply (294, 296) to the power amplifier (106) is achieved by using the hot plate of decoupling capacitors (298, 299), which serve as a floating ground plane to the whole application (200).
    • 提供了一种平衡 - 不平衡变压器和变压器系统(201),其中平衡 - 不平衡变压器(112)级联在两个4:1阻抗变压器(102,110)之间,以形成用于推挽放大器应用(200)的16:1宽带阻抗变换。 平衡 - 不平衡变换器(112)以Marchand配置配置。 平衡不平衡转换器和变压器(201)形成有由非常薄的陶瓷层实现的耦合线。 平衡 - 不平衡转换器(112)中的间隙之间的附加耦合由内置在平衡 - 不平衡转换器的陶瓷中的嵌入式电容器(260)实现。 通过使用用作整个应用(200)的浮动接地平面的去耦电容器(298,299)的热板来实现到功率放大器(106)的直流偏置电源(294,296)。
    • 22. 发明授权
    • Tapered constant “R” network for use in distributed amplifiers
    • 锥形常数“R”网络用于分布式放大器
    • US06714095B2
    • 2004-03-30
    • US10174238
    • 2002-06-18
    • Anthony M. PavioLei Zhao
    • Anthony M. PavioLei Zhao
    • H03A738
    • H01P9/00
    • A constant “R” network distributed amplifier formed in a multi-layer, low temperature co fired ceramic structure comprises multiple cascaded constant “R” networks for amplifying a signal applied thereto. Each one of the multiple cascaded constant “R” networks is formed in the ceramic structure and includes a plurality of ceramic layers each of which have a top and bottom planar surfaces which, when bonded together form the ceramic structure. A transmission line is formed on the top surfaces of each of the ceramic layers having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.
    • 形成在多层低温共烧陶瓷结构中的恒定“R”网络分布式放大器包括用于放大施加到其上的信号的多个级联常数“R”网络。 多个级联常数“R”网络中的每一个形成在陶瓷结构中,并且包括多个陶瓷层,每个陶瓷层具有顶部和底部平坦表面,当它们结合在一起形成陶瓷结构时。 在具有起始端和远端的每个陶瓷层的顶表面上形成传输线,并且具有大致矩形的形状。 形成在下陶瓷层上的传输线的前端通过形成在陶瓷层中的通孔连接到形成在下一个相邻的上陶瓷层上的传输线的起始端,通过该通孔形成金属导电材料。 传输线和在各个层之间建立的电容形成LC结构。 在形成在与FET的漏极耦合的中间陶瓷层上的传输线的中间部分处提供输出。
    • 26. 发明授权
    • GaAs monolithic true logarithmic amplifier
    • GaAs单片真对数放大器
    • US4853564A
    • 1989-08-01
    • US194798
    • 1988-05-17
    • Mark A. SmithAnthony M. Pavio
    • Mark A. SmithAnthony M. Pavio
    • G06G7/24
    • G06G7/24
    • A GaAs monolithic true logarithmic amplifier which includes at least one amplifier stage common to the two arms of the circuit, the two arms being independent thereafter, one having lower gain and higher compression point and the other arm having higher gain and lower compression point. The signals in the arms are then recombined off-chip to provide the same effect as in the prior art. The circuit includes an input stage which amplifies and gain shapes the input signal and then splits the signal into upper and lower paths. The upper path is a relatively lower gain and higher compression point path whereas the lower path is a relatively higher gain and lower compression point path. The upper path includes a FET with a very large gate width whereas the lower path includes plural cascaded FETs, the last of which has a very small gate width. The upper and lower paths both have an odd or an even number of FETs to maintain the phase relation therebetween, the upper path further including transmission line stubs or elements which act as a delay line to compensate for the delay in the lower path due to the larger number of FETs therein. The outputs of the upper and lower paths are combined in a resistive combiner to provide the amplified signal. The output of this circuit is linear at low power and then demonstrates a knee therein at higher input power to resemble the curve of a logarithmic amplifier.
    • 一种GaAs单片真对数放大器,其包括至少一个与电路的两个臂共同的放大器级,两个臂随后独立,一个具有较低的增益和较高的压缩点,另一个臂具有较高的增益和较低的压缩点。 然后将臂中的信号重新组合在芯片外以提供与现有技术相同的效果。 该电路包括输入级,放大并增益输入信号的形状,然后将信号分成上,下路径。 上部路径是相对较低的增益和较高的压缩点路径,而较低的路径是相对较高的增益和较低的压缩点路径。 上部路径包括具有非常大栅极宽度的FET,而下部路径包括多个级联的FET,其中最后一个具有非常小的栅极宽度。 上下路径均具有奇数或偶数个FET以保持它们之间的相位关系,上部路径还包括作为延迟线的传输线短截线或元件,以补偿下部路径中由于 更大数量的FET。 上和下路径的输出在电阻组合器中组合以提供放大的信号。 该电路的输出在低功率下是线性的,然后以更高的输入功率显示膝盖,以类似于对数放大器的曲线。