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    • 25. 发明授权
    • Methods and systems for in-situ pyrometer calibration
    • 用于原位高温计校准的方法和系统
    • US08888360B2
    • 2014-11-18
    • US13331112
    • 2011-12-20
    • Alexander I. GuraryVadim BoguslavskiySandeep KrishnanMatthew King
    • Alexander I. GuraryVadim BoguslavskiySandeep KrishnanMatthew King
    • G01K15/00G01K13/12G01K1/00G01J5/00
    • G01J5/0003G01J5/0007G01J2005/0048
    • A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element.
    • 用于晶片处理反应器如化学气相沉积反应器的原位高温计校准的方法理想地包括以下步骤:将校准高温计放置在第一校准位置并加热反应器直到反应器达到高温计校准温度。 该方法理想地还包括围绕旋转轴线旋转支撑元件,并且当支撑元件围绕旋转轴线旋转时,从安装在第一操作位置的第一操作高温计获得第一操作温度测量值,并获得第一校准温度测量值 校准高温计。 校准高温计和第一操作高温计都期望地适于在离晶片支撑元件的旋转轴线的第一径向距离处接收来自晶片支撑元件的第一部分的辐射。
    • 29. 发明授权
    • Wafer carriers for epitaxial growth processes
    • 用于外延生长工艺的晶圆载体
    • US6001183A
    • 1999-12-14
    • US723682
    • 1996-09-30
    • Alexander I. GuraryEric A. ArmourDouglas A. CollinsRichard A. Stall
    • Alexander I. GuraryEric A. ArmourDouglas A. CollinsRichard A. Stall
    • C23C16/458C23C16/46C30B25/12C23C16/00
    • C23C16/4584C23C16/46C30B25/12
    • A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.
    • 在外延沉积工艺中使用的晶片载体/基座组合具有这样一种构造,其在基底在晶片下方的区域中在不在晶片下方的区域中在基座和晶片载体之间提供更大的导热性。 通过配置晶片载体或基座来产生这种热导率的差异,使得晶片载体的下表面在不在晶片下方的至少一些区域内的基本上位于晶片下方的区域中更靠近基座。 通过控制热导率使其在某些区域比其他区域更大,可以减小晶片和晶片载体表面之间的温度差,并且可以实现跨晶片表面的更均匀的温度分布 。 结果,该组合可用于在每个晶片的整个表面上沉积更均匀的涂层。